InAlAs/GaSbAs/InP DHBT与InP/GaSbAs/InP DHBT性能比较分析

周守利; 杨万春; 任宏亮; 李伽

doi:10.7498/aps.61.128501

摘要

双异质结双极晶体管(DHBT)的性能与发射区-基区(E-B) 异质结和基区-集电区(B-C)异质结的能带突变类型关系密切, 本文基于热场发射-扩散模型, 对两类不同能带结构类型的新型DHBT的性能做了比较分析. 结论表明: 与作为当今研究热点的E-B和B-C异质结构均为全交错II型能带结构的InP/GaSbAs/InP DHBT的性能相比, E-B异质结采用传统I型、B-C异质结采用交错II型的一类新型能带结构的InAlAs/GaSbAs/InP DHBT虽然在开启电压上更高, 但具有更好的电流驱动能力、直流增益和高频性能.

关键词:

Abstract

The characteristics of a double heterojunction bipolar transistor(DHBT) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(E-B) heterojunction and base-collector(B-C) heterojunction. Based on thermionic-field-diffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-I E-B junction and a type-II B-C junction and the later has a type-II E-B junction and a type-II B-C junction. The simulation results show that DHBT with a type-I E-B junction and a type-II B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage.

Keywords:

作者及机构信息

1.
浙江工业大学信息工程学院, 杭州 310032;

2.
中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050;

3.
湘潭大学信息工程学院, 湘潭 411105

基金项目: 信息功能材料国家重点实验室2009开放基金项目(批准号: FMI2009-08), 湖南省教育厅项目(批准号: 09C959)和湖南省科技厅项目(批准号: 2010TY2003)资助的课题.

Authors and contacts

1.
College of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, China;

2.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

3.
College of Information Engineering, Xiangtan University, Xiangtan 411105, China

Funds: Project supported by the Open Fund of State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (Grant No. FMI2009-08), the Hunan Province Education Department (Grant No. 09C959), and the Hunan Provincial Science and Technology Department (Grant No. 2010TY2003).

参考文献

[1]	Qin Z H, Li X J 2009 Semiconductor Technology 34 721 (in Chinese) [齐志华, 李献杰 2009 半导体技术 34 721]
[2]	Bolognesi C R, Dvorak M M W, Yeo P, Xu X G, Watkins S P 2001 IEEE Transactions on Electron Devices 48 2631
[3]	Lye B C, Houlston P A, Yow H K, Button C C 1998 IEEE Trans Electron Devices 45 2417
[4]	Lovblom R, Fluckiger R, Zeng Yuping, Ostinelli O, Alt A R, Benedickter H, Bolognesi C R 2011 IEEE Electron Device Letters 32 629
[5]	Teppati V, Zeng Yuping, Ostinelli O, Bolognesi C R 2011 IEEE Electron Device Letters 32 886
[6]	Chang Y H, Syu R H 2010 Microelectronics Reliability 50 70
[7]	Zeng Y P, Ostinelli O, Liu H G, Bolognesi C R 2008 Solid-State Electronics 52 1202
[8]	Tao N G, Liu H G, Bolognesi C R 2007 Solid-State Electronics 51 995
[9]	Pana C T, Wanga C M, Hsina Y M, Zhub H J, Kuob J M, Kaob Y C 2009 Solid-State Electronics 53 574
[10]	Garcia-Loureiro A J, Lopez-Gonzalez J M 2004 International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 17 29
[11]	Yang K, East J R, Haddad H I 1993 Solid-State Electron 36 321
[12]	Zhou S L, Ren X M 2008 Chinese Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[13]	J M Lopez 1997 IEEE Trans. Electron Devices 44 1046
[14]	Zhou S L, Cui H L, Huang Y Q, Ren X M 2006 Chinese Journal of Semiconductors 27 110 (in Chinese) [周守利, 崔海林, 黄永清, 任晓敏 2006 半导体学报 27 110]
[15]	Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Physica Sinica 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 56 2890]
[16]	Lee J M, Lee T W, Park S H, Minb B G, Parkb M P, Leeb KH, Choia I H 2001 Mater. Sci. Engineering B 79 63
[17]	Yi C G, Kim T H, Brown A S 2002 Journal of Electronic Materials 31 95
[18]	Oon Sim Ang 1990 MS Thesis (Vancouver of Canada: The University of British Columbia)
[19]	Yi C H 2002 Ph. D. Dissertation (Atlanta of USA: Georgia Institute of Technology)
[20]	Gao G B, Fan Z F, Morkoc H 1992 Appl. Phys. Lett. 61 198

施引文献

[1]	Qin Z H, Li X J 2009 Semiconductor Technology 34 721 (in Chinese) [齐志华, 李献杰 2009 半导体技术 34 721]
[2]	Bolognesi C R, Dvorak M M W, Yeo P, Xu X G, Watkins S P 2001 IEEE Transactions on Electron Devices 48 2631
[3]	Lye B C, Houlston P A, Yow H K, Button C C 1998 IEEE Trans Electron Devices 45 2417
[4]	Lovblom R, Fluckiger R, Zeng Yuping, Ostinelli O, Alt A R, Benedickter H, Bolognesi C R 2011 IEEE Electron Device Letters 32 629
[5]	Teppati V, Zeng Yuping, Ostinelli O, Bolognesi C R 2011 IEEE Electron Device Letters 32 886
[6]	Chang Y H, Syu R H 2010 Microelectronics Reliability 50 70
[7]	Zeng Y P, Ostinelli O, Liu H G, Bolognesi C R 2008 Solid-State Electronics 52 1202
[8]	Tao N G, Liu H G, Bolognesi C R 2007 Solid-State Electronics 51 995
[9]	Pana C T, Wanga C M, Hsina Y M, Zhub H J, Kuob J M, Kaob Y C 2009 Solid-State Electronics 53 574
[10]	Garcia-Loureiro A J, Lopez-Gonzalez J M 2004 International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 17 29
[11]	Yang K, East J R, Haddad H I 1993 Solid-State Electron 36 321
[12]	Zhou S L, Ren X M 2008 Chinese Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[13]	J M Lopez 1997 IEEE Trans. Electron Devices 44 1046
[14]	Zhou S L, Cui H L, Huang Y Q, Ren X M 2006 Chinese Journal of Semiconductors 27 110 (in Chinese) [周守利, 崔海林, 黄永清, 任晓敏 2006 半导体学报 27 110]
[15]	Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Physica Sinica 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 56 2890]
[16]	Lee J M, Lee T W, Park S H, Minb B G, Parkb M P, Leeb KH, Choia I H 2001 Mater. Sci. Engineering B 79 63
[17]	Yi C G, Kim T H, Brown A S 2002 Journal of Electronic Materials 31 95
[18]	Oon Sim Ang 1990 MS Thesis (Vancouver of Canada: The University of British Columbia)
[19]	Yi C H 2002 Ph. D. Dissertation (Atlanta of USA: Georgia Institute of Technology)
[20]	Gao G B, Fan Z F, Morkoc H 1992 Appl. Phys. Lett. 61 198

[1]	黄馨雨, 张晋新, 王信, 吕玲, 郭红霞, 冯娟, 闫允一, 王辉, 戚钧翔. 基于锗硅异质结双极晶体管的低噪声放大器及其反模结构的单粒子瞬态数值仿真研究. , 2024, 73(12): 126103. doi: 10.7498/aps.73.20240307
[2]	张晋新, 王信, 郭红霞, 冯娟, 吕玲, 李培, 闫允一, 吴宪祥, 王辉. 三维数值仿真研究锗硅异质结双极晶体管总剂量效应. , 2022, 71(5): 058502. doi: 10.7498/aps.71.20211795
[3]	王冲, 赵梦荻, 裴九清, 何云龙, 李祥东, 郑雪峰, 毛维, 马晓华, 张进成, 郝跃. AlGaN/GaN双异质结F注入增强型高电子迁移率晶体管. , 2016, 65(3): 038501. doi: 10.7498/aps.65.038501
[4]	李培, 郭红霞, 郭旗, 文林, 崔江维, 王信, 张晋新. 锗硅异质结双极晶体管单粒子效应加固设计与仿真. , 2015, 64(11): 118502. doi: 10.7498/aps.64.118502
[5]	刘静, 武瑜, 高勇. 沟槽型发射极SiGe异质结双极化晶体管新结构研究. , 2014, 63(14): 148503. doi: 10.7498/aps.63.148503
[6]	张晋新, 贺朝会, 郭红霞, 唐杜, 熊涔, 李培, 王信. 不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究. , 2014, 63(24): 248503. doi: 10.7498/aps.63.248503
[7]	刘静, 郭飞, 高勇. 超结硅锗碳异质结双极晶体管机理研究与特性分析优化. , 2014, 63(4): 048501. doi: 10.7498/aps.63.048501
[8]	张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟. 重离子导致的锗硅异质结双极晶体管单粒子效应电荷收集三维数值模拟. , 2013, 62(4): 048501. doi: 10.7498/aps.62.048501
[9]	孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘. 不同剂量率下锗硅异质结双极晶体管电离损伤效应研究. , 2013, 62(19): 196104. doi: 10.7498/aps.62.196104
[10]	鲁东, 金冬月, 张万荣, 张瑜洁, 付强, 胡瑞心, 高栋, 张卿远, 霍文娟, 周孟龙, 邵翔鹏. 新型宽温区高热稳定性微波功率SiGe 异质结双极晶体管. , 2013, 62(10): 104401. doi: 10.7498/aps.62.104401
[11]	周守利, 李伽, 任宏亮, 温浩, 彭银生. 异质结界面电荷对突变InP/InGaAs异质结双极晶体管热场发射影响研究. , 2013, 62(17): 178501. doi: 10.7498/aps.62.178501
[12]	陈亮, 张万荣, 金冬月, 谢红云, 肖盈, 王任卿, 丁春宝. 采用发射极非均匀指间距技术改善功率异质结双极晶体管热稳定性的研究. , 2011, 60(7): 078501. doi: 10.7498/aps.60.078501
[13]	肖盈, 张万荣, 金冬月, 陈亮, 王任卿, 谢红云. 能带工程对射频功率SiGe异质结双极晶体管热性能的改善. , 2011, 60(4): 044402. doi: 10.7498/aps.60.044402
[14]	胡辉勇, 舒钰, 张鹤鸣, 宋建军, 宣荣喜, 秦珊珊, 屈江涛. 含有本征SiGe层的SiGe异质结双极晶体管集电结耗尽层宽度模型. , 2011, 60(1): 017303. doi: 10.7498/aps.60.017303
[15]	段子刚, 黄晓东, 周宁, 徐光辉, 柴广跃. 1.5 μm波长n-p-n型InGaAsP-InP晶体管激光器材料外延生长. , 2010, 59(9): 6193-6199. doi: 10.7498/aps.59.6193
[16]	葛霁, 金智, 苏永波, 程伟, 刘新宇, 吴德馨. 一种InP双异质结双极晶体管小信号物理模型及其提取方法. , 2009, 58(12): 8584-8590. doi: 10.7498/aps.58.8584
[17]	刘海文, 孙晓玮, 程知群, 车延峰, 李征帆. GaInP/GaAs异质结双极晶体管小信号模型参数提取的新方法. , 2003, 52(9): 2298-2303. doi: 10.7498/aps.52.2298
[18]	桂永胜, 郑国珍, 郭少令, 褚君浩, 汤定元, 陈建新, 李爱珍. 赝形InGaAs/InAlAs渐变异质结中的零磁场自旋分裂. , 1999, 48(1): 121-126. doi: 10.7498/aps.48.121
[19]	张兴宏, 胡雨生, 吴杰, 程知群, 夏冠群, 徐元森, 陈张海, 桂永胜, 褚君浩. 深能级对AlGaInP/GaAs异质结双极晶体管性能的影响. , 1999, 48(3): 556-560. doi: 10.7498/aps.48.556
[20]	杨玉芬. 双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想. , 1981, 30(6): 794-801. doi: 10.7498/aps.30.794

计量

文章访问数: 7116
PDF下载量: 611
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板