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In this paper, GaN-based InGaN/GaN MQW power LEDs are fabricated based on the existing technology through a simple processing, and their optical, electrical, and color properties are tested. Results show that the luminous intensity of the chips with omnidirectional reflector(ODR) has an improvement of 244mcd over that with the ordinary chips, and that the ODR LED's luminous flux, the efficiency and the color purity are improved by 6.04%, 5.74%, 78.64% respectively. One of the advantages of the ODR LED is its low color temperature, which is greatly lower than that of the ordinary LED.
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Keywords:
- light-emitting diodes /
- ODR /
- color temperature
[1] Tu S H, Lan C J, Wang S H, Lee M L, Chang K H, Lin R M, Chang J Y, Sheu J K 2010 Appl.Phys.Lett. 96 133504
[2] Horng R H, Zheng X H, Hsieh C Y, Wuu D S 2008 Appl.Phys.Lett. 93 021125
[3] Lin H, Liu S, Zhang X U, Liu B L, Ren X C 2009 Acta. Phys. Sin. 58 2(in Chinese)[林 瀚、刘 守、张向苏、刘宝林、任雪畅 2009 58 2]
[4] Li Y B, Guo X, Guan B L, Chuai D X, Shen G D 2009 Research & Progress of SSE 29 3 [李一博、郭 霞、关宝路、揣东旭、沈光地 2009 固体电子学研究与进展 29 3]
[5] Gessmann T, Schubert E F, Graff J W, Streubel K, Karnutsch C 2003 IEEE Trans. Electr. Devices 24 683
[6] Sheu J K, Hsiu Hung I, Lai W C, Shei S C, Lee M L 2008 Appl. Phys. Lett. 93 103507
[7] Jin Y Z, Hu Y P, Zeng X H, Yang Y J 2010 Acta. Phys. Sin. 59 1258—1262(in Chinese)[金豫浙、胡益培、曾祥华、杨义军 2010 59 1258]
[8] Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 1
[9] Li J F, Xia D Z, Li J, Zhou J 2009 Light & Lighting 33 37(in Chinese) [李君飞、夏鼎智、李 军、周 静 2009 灯与照明33 37]
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[1] Tu S H, Lan C J, Wang S H, Lee M L, Chang K H, Lin R M, Chang J Y, Sheu J K 2010 Appl.Phys.Lett. 96 133504
[2] Horng R H, Zheng X H, Hsieh C Y, Wuu D S 2008 Appl.Phys.Lett. 93 021125
[3] Lin H, Liu S, Zhang X U, Liu B L, Ren X C 2009 Acta. Phys. Sin. 58 2(in Chinese)[林 瀚、刘 守、张向苏、刘宝林、任雪畅 2009 58 2]
[4] Li Y B, Guo X, Guan B L, Chuai D X, Shen G D 2009 Research & Progress of SSE 29 3 [李一博、郭 霞、关宝路、揣东旭、沈光地 2009 固体电子学研究与进展 29 3]
[5] Gessmann T, Schubert E F, Graff J W, Streubel K, Karnutsch C 2003 IEEE Trans. Electr. Devices 24 683
[6] Sheu J K, Hsiu Hung I, Lai W C, Shei S C, Lee M L 2008 Appl. Phys. Lett. 93 103507
[7] Jin Y Z, Hu Y P, Zeng X H, Yang Y J 2010 Acta. Phys. Sin. 59 1258—1262(in Chinese)[金豫浙、胡益培、曾祥华、杨义军 2010 59 1258]
[8] Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 1
[9] Li J F, Xia D Z, Li J, Zhou J 2009 Light & Lighting 33 37(in Chinese) [李君飞、夏鼎智、李 军、周 静 2009 灯与照明33 37]
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