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采用直流磁控溅射的方法制备了Al/ZnO/Al纳米薄膜,并对薄膜分别在真空及空气中进行退火处理.利用X射线衍射仪(XRD)和物理性能测量仪(PPMS)分别对薄膜样品的结构和磁性进行了表征.XRD分析表明,不同的退火氛围对薄膜的微结构有着很大的影响.采用了一种新的修正方法对磁测量结果进行修正,计算了基底拟合误差的最大值,并对修正后样品的磁性进行了分析.结果显示,室温铁磁性可能与Al和ZnO基体之间发生的电荷转移以及在不同退火氛围下Al在ZnO晶格中的地位变化有关.
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关键词:
- Al/ZnO/Al薄膜 /
- 铁磁性 /
- 磁性表征
Al/ZnO/Al thin films are prepared on the glass substrates by dc magnetron sputtering and annealed in vacuum and atmosphere, separately. The crystal structures are analyzed by X-ray diffraction (XRD), and the magnetic properties are measured by a Physical Properties Measurement System (PPMS) with a magnetic field parallel to the films plane. The XRD results indicate that the microstructures of thin films are greatly influenced by the annealing aura. In this paper, an improved corrected method to subtract the signal of the substrate is suggested. Simultaneously, the maximum fitting error of substrate is calculated, and the magnetic properties of the modified films are discussed. The results show that the room temperature ferromagnetism may be related to the charge transfer between Al and Zn and the variational position of Al in ZnO films in different annealing conditions.-
Keywords:
- Al /ZnO/ Al films /
- ferromagnetic /
- magnetron characterization
[1] Liu G L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
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[3] Sharma V K , Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[5] Wang D F, Park S Y, Lee Y S 2008 J. Appl. Phys. 103 07D126
[6] Wang C Z, Chen Z, He Y 2009 Applied Surface Science 255 6881
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[8] Liu E, Xiao P, Chen J S, Lim B C, Li L 2008 Current Applied Physics 8 408
[9] Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[10] Lu Z L, Zou W Q, Xu M X, Zhang F M 2010 Chin. Phys. B 19 056101
[11] Yu W, Yang L H, Teng X Y 2008 J. Appl. Phys. 103 093901
[12] Liu X C, Zhang H W, Zhang T, Chen B Y, Chen Z Z, Song L X, Shi E W 2008 China. Phys. B 17 1371
[13] Ma Y W, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[14] Zhang Y B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[15] Ney V, Ye S, Kammermeier T, Ney A, Zhou H, Fallert J, Kalt H, Lo F Y, Melnikov A, Wieck A D 2008 J.Appl. Phys.104 083904
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[1] Liu G L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
[2] Hsu H S, Huanget J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y, Liu C P 2006 Appl. Phys. Lett. 88 242507
[3] Sharma V K , Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[5] Wang D F, Park S Y, Lee Y S 2008 J. Appl. Phys. 103 07D126
[6] Wang C Z, Chen Z, He Y 2009 Applied Surface Science 255 6881
[7] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467(in Chinese)[路忠林、邹文琴、徐明祥、张凤鸣 2009 58 8467]
[8] Liu E, Xiao P, Chen J S, Lim B C, Li L 2008 Current Applied Physics 8 408
[9] Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[10] Lu Z L, Zou W Q, Xu M X, Zhang F M 2010 Chin. Phys. B 19 056101
[11] Yu W, Yang L H, Teng X Y 2008 J. Appl. Phys. 103 093901
[12] Liu X C, Zhang H W, Zhang T, Chen B Y, Chen Z Z, Song L X, Shi E W 2008 China. Phys. B 17 1371
[13] Ma Y W, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[14] Zhang Y B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[15] Ney V, Ye S, Kammermeier T, Ney A, Zhou H, Fallert J, Kalt H, Lo F Y, Melnikov A, Wieck A D 2008 J.Appl. Phys.104 083904
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