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A new method to measure the carrier concentration of p-GaN is proposed. The main idea is as follows: the difference between p-n+ structure GaN ultraviolet photodetector’s quantum efficiency at two different wavelengths varies remarkably with increasing reversed bias, and the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted, consequently the carrier concentration of p-GaN can be derived basing on this effect. The simulation results prove the validity of the idea even under the condition of high surface recombination velocity and bad ohmic contact. The thickness choice of p-GaN samples during the carrier concentration test experiment using this method is investigated. It is shown that the optimized thickness of p-GaN decreases with the increase of carrier concentration of p-GaN samples.
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Keywords:
- p-GaN /
- carrier concentration measurement /
- ultraviolet photodetector
[1] Nakamura S 1998 Science 281 956
[2] Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Inst. Phys. Conf. Ser. 106 725
[3] Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[4] Nakamura S, Mukai T, Senoh M, Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[5] Nakamura S, Iwasa N, Senoh M, Mukai T 1992 Jpn. J. Appl. Phys. 31 1258
[6] Nakamura S, Senoh M, Mukai T 1994 Appl. Phys. Lett. 64 1687
[7] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[8] Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张 爽、赵德刚、刘宗顺、朱建军、张书明、王玉田、段俐宏、刘文宝、江德生、杨 辉 2009 58 7952]
[9] Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z P 2004 Acta Phys. Sin. 53 2720 (in Chinese) [罗 毅、郭文平、邵嘉平、胡 卉、韩彦军、薛 松、汪 莱、孙长征、郝智彪 2004 53 2720]
[10] Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[11] Zhang L Q, Zhang S M, Jiang D S, Wang H, Zhu J J, Zhao D G, Liu Z S, Yang H 2009 Chin. Phys. B 18 5350
[12] Zhou M, Zuo S H, Zhao D G 2007 Acta Phys. Sin. 56 5513 (in Chinese) [周 梅、左淑华、赵德刚 2007 56 5513]
[13] Hu Z H, Liao X B, Diao H W, Xia C F, Xu L, Zeng X B, Hao H Y, Kong G L, 2005 Acta Phys. Sin. 54 2302 (in Chinese) [胡志华、廖显伯、刁宏伟、夏朝凤、许 玲、曾湘波、郝会颖、孔光临 2005 54 2302]
[14] Zhao D G, Jiang D S, Zhu J J, Liu Z S, Zhang S M, Yang H 2008 Semicond. Sci. Technol. 23 095021
[15] Zhang X, Kung P, Walker D, Biotrowski J, Rogalski A, Sazier A, Razeghi M 1995 Appl. Phys. Lett. 67 2028
[16] Sze S M 1981 Physics of Semiconductor Devices, 2nd edn (New York: Wiley)
[17] Zhao D G, Zhang S, Liu W B, Hao X P, Jiang D S, Zhu J J, Liu Z S, Wang H, Zhang S M, Yang H, Wei L, 2010 Chin. Phys. B 19 057802
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[1] Nakamura S 1998 Science 281 956
[2] Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Inst. Phys. Conf. Ser. 106 725
[3] Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[4] Nakamura S, Mukai T, Senoh M, Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[5] Nakamura S, Iwasa N, Senoh M, Mukai T 1992 Jpn. J. Appl. Phys. 31 1258
[6] Nakamura S, Senoh M, Mukai T 1994 Appl. Phys. Lett. 64 1687
[7] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[8] Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张 爽、赵德刚、刘宗顺、朱建军、张书明、王玉田、段俐宏、刘文宝、江德生、杨 辉 2009 58 7952]
[9] Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z P 2004 Acta Phys. Sin. 53 2720 (in Chinese) [罗 毅、郭文平、邵嘉平、胡 卉、韩彦军、薛 松、汪 莱、孙长征、郝智彪 2004 53 2720]
[10] Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[11] Zhang L Q, Zhang S M, Jiang D S, Wang H, Zhu J J, Zhao D G, Liu Z S, Yang H 2009 Chin. Phys. B 18 5350
[12] Zhou M, Zuo S H, Zhao D G 2007 Acta Phys. Sin. 56 5513 (in Chinese) [周 梅、左淑华、赵德刚 2007 56 5513]
[13] Hu Z H, Liao X B, Diao H W, Xia C F, Xu L, Zeng X B, Hao H Y, Kong G L, 2005 Acta Phys. Sin. 54 2302 (in Chinese) [胡志华、廖显伯、刁宏伟、夏朝凤、许 玲、曾湘波、郝会颖、孔光临 2005 54 2302]
[14] Zhao D G, Jiang D S, Zhu J J, Liu Z S, Zhang S M, Yang H 2008 Semicond. Sci. Technol. 23 095021
[15] Zhang X, Kung P, Walker D, Biotrowski J, Rogalski A, Sazier A, Razeghi M 1995 Appl. Phys. Lett. 67 2028
[16] Sze S M 1981 Physics of Semiconductor Devices, 2nd edn (New York: Wiley)
[17] Zhao D G, Zhang S, Liu W B, Hao X P, Jiang D S, Zhu J J, Liu Z S, Wang H, Zhang S M, Yang H, Wei L, 2010 Chin. Phys. B 19 057802
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