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A study of the internal damage process and mechanism of the typical n+-p-n-n+ structure bipolar transistor induced by the intense electromagnetic pulse (EMP) is carried out in this paper from the variation analysis of the distribution of the electric field,the current density and the temperature. Research shows that the damage position of the bipolar transistor is different with the different magnitude of the injecting voltage,when the magnitude of the injecting voltage is low the damage will appear firstly near the collector region under the center of the emitter region,and when the magnitude of the injecting voltage is sufficiently high the damage will appear firstly at the edge of the base near the emitter due to the breakdown of the PIN structure composed of the base-epitaxial layer-collector. Adopting the data analysis software,the relation equation between the device damage power P and the pulse width T under different injecting voltage is obtained. Owing to the variety of the device damage energy,it is demonstrated that the empirical formulas of the intense electromagnetic pulse P=AT-1 (A is a constant) is modified to P=AT-1.4 for the bipolar transistor.
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Keywords:
- bipolar transistor /
- the intense electromagnetic pulse /
- device damage /
- damage power
[1] Wunsch D C,Bell R R 1968 IEEE Transactions on Nuclear Science 15 244
[2] Dobykin V D,Kharchenko V V 2006 Journal of Communications Technology and Electronics 51 231
[3] Dobykin V D 2008 Journal of Communications Technology and Electronics 53 100
[4] Wang Y,Jia S,Sun L,Zhang G G,Zhang X,Ji L J 2007 Acta Phys. Sin. 56 7243 (in Chinese) [王 源、贾 嵩、孙 磊、张钢刚、张 兴、吉利久 2007 56 7243]
[5] Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2008 Journal of Semiconductors 29 2403 (in Chinese) [柴常春、杨银堂、张 冰、冷 鹏、杨 杨、饶 伟 2008 半导体学报 29 2403]
[6] Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2009 Semiconductor Science and Technology 24 035003
[7] Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B 2009 Proceedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of integrated Circuits,Suzhou,China,July 6—10,2009 p443
[8] Manck O,Engl W L 1975 IEEE Transaction on Electron Device 22 339
[9] Yu W,Cai X H,Huang W H,Liu G Z 1999 High Power Laser and Particle Beams 11 355 (in Chinese) [余 稳、蔡新华、黄文华、刘国治 1999 强激光与粒子束 11 355]
[10] Li P,Fang J Y,Liu G Z,Huang W H 2000 Experiment and Study 23 70 (in Chinese) [李 平、方进勇、刘国治、黄文华 2000 试验与研究 23 70]
[11] Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B,Hong X 2010 Journal of Semiconductors 31 044005
[12] Zhou H A,Du Z W,Gong K 2005 High Power Laser and Particle Beams 17 1861 (in Chinese) [周怀安、杜正伟、龚 克 2005 强激光与粒子束 17 1861]
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[1] Wunsch D C,Bell R R 1968 IEEE Transactions on Nuclear Science 15 244
[2] Dobykin V D,Kharchenko V V 2006 Journal of Communications Technology and Electronics 51 231
[3] Dobykin V D 2008 Journal of Communications Technology and Electronics 53 100
[4] Wang Y,Jia S,Sun L,Zhang G G,Zhang X,Ji L J 2007 Acta Phys. Sin. 56 7243 (in Chinese) [王 源、贾 嵩、孙 磊、张钢刚、张 兴、吉利久 2007 56 7243]
[5] Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2008 Journal of Semiconductors 29 2403 (in Chinese) [柴常春、杨银堂、张 冰、冷 鹏、杨 杨、饶 伟 2008 半导体学报 29 2403]
[6] Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2009 Semiconductor Science and Technology 24 035003
[7] Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B 2009 Proceedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of integrated Circuits,Suzhou,China,July 6—10,2009 p443
[8] Manck O,Engl W L 1975 IEEE Transaction on Electron Device 22 339
[9] Yu W,Cai X H,Huang W H,Liu G Z 1999 High Power Laser and Particle Beams 11 355 (in Chinese) [余 稳、蔡新华、黄文华、刘国治 1999 强激光与粒子束 11 355]
[10] Li P,Fang J Y,Liu G Z,Huang W H 2000 Experiment and Study 23 70 (in Chinese) [李 平、方进勇、刘国治、黄文华 2000 试验与研究 23 70]
[11] Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B,Hong X 2010 Journal of Semiconductors 31 044005
[12] Zhou H A,Du Z W,Gong K 2005 High Power Laser and Particle Beams 17 1861 (in Chinese) [周怀安、杜正伟、龚 克 2005 强激光与粒子束 17 1861]
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