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高能电子辐照下FeCoCrNiAl0.3高熵合金的缺陷演变原位研究及缺陷迁移能计算

刁斯喆 张一帆 赵芳茜 Seung Jo Yoo Somei Ohnuki 万发荣 张勇 詹倩

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高能电子辐照下FeCoCrNiAl0.3高熵合金的缺陷演变原位研究及缺陷迁移能计算

刁斯喆, 张一帆, 赵芳茜, Seung Jo Yoo, Somei Ohnuki, 万发荣, 张勇, 詹倩

In-situ study of defect evolution and calculation of defect migration energy in FeCoCrNiAl0.3 high-entropy alloy under high-energy electron irradiation

DIAO Sizhe, ZHANG Yifan, ZHAO Fangqian, Seung Jo Yoo, Somei Ohnuki, ZHANG Yong, WAN Farong, ZHAN Qian
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  • 高熵合金中的缓慢扩散效应与严重的晶格畸变效应理论上会阻碍辐照诱导的点缺陷的移动,从而抑制尺寸较大的缺陷团簇的形成,这使得该类合金在核材料领域中受到越来越多的关注。本文以FeCoCrNiAl0.3高熵合金为研究对象,利用1.25MV的超高压电镜,对高能电子辐照过程中的缺陷与析出相随辐照温度和时间的形成与演化行为进行原位观察及系统性研究。根据三种高温辐照温度下的饱和缺陷密度与缺陷生长率的统计数据,获得FeCoCrNiAl0.3高熵合金的间隙原子迁移能与空位迁移能两个本征参数,讨论了该合金较高的缺陷迁移能与合金中各元素的离位阈能以及原子尺寸错配的关系。同时,系统表征了723K高能电子辐照下位错环的形态与分布规律,发现全位错环与不全位错环可同时产生,且两者在生长过程中不存在系统性的差异。
    The sluggish diffusion and severe lattice distortion effects in high-entropy alloys (HEAs) theoretically impede the movement of radiation-induced point defects, thereby effectively suppressing the formation of larger defect clusters and ultimately enhancing the radiation resistance of materials. Current research on the radiation resistance of HEAs primarily concentrates on the qualitative analysis of the migration behaviors of radiation-induced defects, while the quantitative research on the energy barriers of the migration behavior of point defects is still limited. As a representative HEA system, FeCoCrNiAl-based alloys exhibit exceptional properties, including enhanced ductility, remarkable shear resistance, high tensile yield strength and excellent oxidation resistance. In this study, we selected the FeCoCrNiAl0.3 alloy as the model material and conducted in-situ observations using a 1.25 MV high voltage electron microscope (HVEM) to systematically investigate the temporal evolution of irradiation-induced defects and precipitates under different temperatures. Based on the statistical data of saturated defect number density and defect growth rates under three irradiation temperatures, two intrinsic parameters of the alloy - the interstitial atom migration energy and vacancy migration energy - were determined respectively, which is 1.09 eV and 1.47 eV, respectively. The higher interstitial atomic migration energy may be related to the incorporation of Al, which has a smaller threshold energy and exhibits a larger atomic radius difference compared to the other elements in the alloy. In addition, the morphology and distribution of dislocation loops formed under 723 K high energy electron irradiation were characterized in detail, revealing the coexistence of perfect dislocation loops and Frank dislocation loops, both of which grow along different crystal planes. No systematic difference is observed between the growth process of the two types of loops.
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