自支撑单晶氧化物薄膜的应用研究进展

彭若波; 董国华; 刘明

doi:10.7498/aps.72.20222382

摘要

随着柔性电子的迅猛发展, 越来越多的新型智能可穿戴电子设备, 逐渐改变人们的生活方式. 同时, 可穿戴器件小型化、柔性化、集成化、低功耗等需求不断提高, 对柔性功能材料的要求越来越高, 特别是亟需具有丰富功能特性的氧化物薄膜材料. 近年来, 随着薄膜生长与剥离技术的进步, 自支撑单晶氧化物薄膜被开发出来. 由于其脱离衬底束缚展现出优异柔性特征的同时, 保持了丰富的磁、电、光、热、力等功能, 在信息存储、智能传感、生物医疗、能源等领域具有广泛的应用前景. 本文从自支撑氧化物薄膜的制备技术出发, 展开介绍了基于铁电、压电、铁磁、金属-绝缘体转变等物理效应的晶体管存储器、能量收集、纳米发电机、应变传感器、储能器件及超导等方面的应用.

关键词:

Abstract

Flexible electronics have aroused great interest of researchers because of their wide applications in information storage, energy harvesting and wearable device. To realize extraordinary functionalities, freestanding single crystal oxide thin film is utilized due to its super elasticity, easy-to-transfer, and outstanding ferro/electric/magnetic properties. Using the state-of-art synthesis methods, functional oxide films of various materials can be obtained in freestanding phase, which eliminates the restrictions from growth substrate and is transferable to other flexible layers. In this work, we first introduce wet etching and mechanical exfoliation methods to prepare freestanding single crystal oxide thin film, then review their applications in ferroelectric memory, piezoelectric energy harvester, dielectric energy storage, correlated oxide interface, and novel freestanding oxide structure. The recent research progress and future outlooks are finally discussed.

Keywords:

作者及机构信息

西安交通大学电子与信息学部电子科学与工程学院, 电子陶瓷与器件教育部重点实验室, 西安　710049

通信作者: 董国华, guohuadong@xjtu.edu.cn ; 刘明, mingliu@xjtu.edu.cn

基金项目: 国家重点研发计划 (批准号: 2022YFB3205701)、国家自然科学基金 (批准号: U22A2019, 91964109, 52002310)和陕西省创新团队支持项目 (批准号: 2021TD-12)资助的课题.

Authors and contacts

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Corresponding author: Dong Guo-Hua, guohuadong@xjtu.edu.cn ; Liu Ming, mingliu@xjtu.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3205701), the National Natural Science Foundation of China (Grant Nos. U22A2019, 91964109, 52002310), and the Innovation Team Support Project of Shaanxi Province, China (Grant No. 2021TD-12).

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施引文献

图 1 自支撑单晶氧化物薄膜的剥离制备工艺及应用: 制备工艺包括机械剥离^[17,24]和湿法牺牲层剥离^[25], 应用方向包括铁电存储^[26]、能量收集^[19]、介电储能^[27]、强关联应用^[28]、磁性氧化物^[29,30]和新应用方向^[17,31]

Fig. 1. Preparation methods and applications of freestanding single crystal oxide films: Synthesis methods include mechanical exfoliation^[17,24] and wet etching technology^[25], while applications include ferroelectric memory^[26], piezoelectric energy harvester^[19], dielectric energy storage^[27], correlated oxide interface^[28], magnetic oxide device^[29,30] and novel freestanding oxide structure^[17,31].

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图 2 不同湿法刻蚀材料的晶胞参数对比

Fig. 2. Lattice parameters of materials used in wet etching technology.

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图 3 几种自支撑氧化物薄膜的剥离工艺　(a)湿法刻蚀工艺制备单晶氧化物薄膜^[25]; (b)激光剥离工艺制备大面积PbZr_0.52Ti_0.48O₃薄膜^[24]; (c)借助石墨烯中间层的物理剥离工艺制备单晶氧化物薄膜^[17]

Fig. 3. Synthesis methods of freestanding oxide films: (a) Wet etching technology by Sr₃Al₂O₆ sacrificial layer to prepare freestanding single crystal oxide film^[25]; (b) laser lift-off method to prepare large area PbZr_0.52Ti_0.48O₃ film^[24]; (c) mechanical exfoliation by graphene interlayer to prepare single crystal oxide film^[17].

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图 4 铁电薄膜中的拓扑结构　(a) 通量全闭合畴壁^[53]; (b) 铁电涡旋畴^[57]; (c) 铁电泡泡畴^[52]; (d) 铁电斯格明子^[55]; (e) 极化波^[54]

Fig. 4. Topology structures in ferroelectric films: (a) Flux-closure domains^[53]; (b) ferroelectric vortex domains^[57]; (c) nanoscale bubble domains^[52]; (d) ferroelectric skyrmions^[55]; (e) dipole waves^[54].

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图 5 自支撑单晶氧化薄膜在铁电隧道结和晶体管中的应用　(a) BTO/LSMO柔性双层薄膜为基础的高质量柔性铁电隧道结^[61]; (b) 柔性BFO铁电隧道结与神经突触示意图^[63]; (c) 薄BTO层为铁电介质的单层MoS₂场效应晶体管^[62]; (d)柔性铁电HZO 电容器^[26]

Fig. 5. Applications of freestanding single crystal oxide films in ferroelectric tunnel junctions and field-effect transistors: (a) BTO/LSMO based flexible ferroelectric tunnel junction^[61]; (b) schematic diagram of BFO ferroelectric tunnel junction based artificial synapse^[63]; (c) monolayer MoS₂ FET with ferroelectric thin BTO layer^[62]; (d) flexible ferroelectric HZO capacitor^[26].

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图 6 自支撑单晶氧化薄膜在能量收集中的应用　(a) BTO柔性纳米发电机示意图^[19]; (b) BTO柔性纳米发电机测试结果图^[19]; (c) PZT柔性纳米发电机结构与测试示意图^[24]; (d) PZT柔性纳米发电机正向连接电输出结果图^[24]; (e) PZT柔性纳米发电机点亮100个LED灯实物图^[24]; (f) PZT振动能量收集器实物图^[74]; (g) PZT振动能量收集器漏电流测试结果图^[74]; (h) PMN-PT柔性能量收集器置于小鼠体内示意图^[75]; (i) PMN-PT柔性能量收集器刺激小鼠心肌心电图^[75]

Fig. 6. Applications of freestanding single crystal oxide films in energy harvesting: (a) Schematic diagram of BTO flexible nanogenerator^[19]; (b) output current of BTO flexible nanogenerator^[19]; (c) structure and test diagram of PZT flexible nanogenerator^[24]; (d) output voltage and current of PZT flexible nanogenerator with forward connection^[24]; (e) photograph of 100 LEDs turned on by PZT flexible nanogenerator^[24]; (f) photograph of PZT vibration sensor^[74]; (g) leak current test of PZT vibration sensor^[74]; (h) schematic diagram of PMN-PT flexible energy harvester^[75]; (i) ECG of PMN-PT flexible energy harvester used as pacemaker^[75].

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图 7 自支撑单晶氧化薄膜在传感方面的应用　(a) 以ZnO为牺牲层的VO₂的制备工艺^[76]; (b) 身体锻炼前后脉搏传感记录^[76]; (c) PZT触觉传感器结构示意图^[77]; PZT触觉传感器在(d)触摸和(e)弯曲下信号输出^[77]

Fig. 7. Applications of freestanding single crystal oxide films in tactile sensing: (a) Fabrication process of VO₂ using ZnO as the sacrificial layer^[76]; (b) recorded pulses before and after physical exercise^[76]; (c) structure diagram of PZT tactile sensor^[77]; (d) and (e) show output signals of touching and bending from PZT tactile sensor^[77].

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图 8 自支撑单晶氧化薄膜在谐振器中的应用　(a) BTO薄膜与石墨烯组成的以压电驱动制动的谐振器实验测试示意图^[81]; (b) BTO薄膜与石墨烯谐振器幅值与相位偏移图^[81]; (c), (d) STO纳米鼓谐振器谐振模式结果图^[82]; STO退火前(e)和后(f)中泵探头测量的截面图^[83]; (g) STO非退火(黑色)和退火(浅蓝色)的皮秒超声测量示例^[83]; (h)对(g)中的波进行傅里叶变换^[83]

Fig. 8. Applications of freestanding single crystal oxide films in resonators: (a) Schematic and testing diagram of BTO film and graphene based piezoelectric resonator ^[81]; (b) membrane magnitude and phase while sweeping the AC driving frequency ^[81]; (c), (d) test result of STO nano-drum resonator ^[82]; cross sectional illustration of the pump-probe measurement in (e) nonannealed STO and (f) annealed STO ^[83]; (g) examples of picosecond ultrasonic measurements on nonannealed (black) and annealed (light blue) of STO^[83]; (h) Fourier transform of the waves in (g)^[83].

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图 9 自支撑单晶氧化薄膜在光电传感中的应用　(a)自支撑Ga₂O₃薄膜的制备工艺图^[84]; (b) 不同光照强度下Ga₂O₃光电探测器的I-V结果图^[84]; (c) Ga₂O₃光电探测器254 nm光照下的I-T曲线^[84]; (d) NiCo₂O₄光电探测器结构图^[85]; (e) NiCo₂O₄光电探测器的I-V结果图^[85]; (f) ZnIn₂S₄光电探测器示意图^[86]; (g) ZnIn₂S₄光电探测器在黑暗和照明下测量的I-V曲线^[86]; (h) ZnIn₂S₄薄膜制成的可穿戴设备^[86]

Fig. 9. Applications of freestanding single crystal oxide films in photoelectric sensing: (a) Schematics of the freestanding Ga₂O₃ films fabrication process^[84]; (b) I-V curve of Ga₂O₃ photodetectors at different light intensity^[84]; (c) I-T curve of Ga₂O₃ photoelectric under 254 nm illumination^[84]; (d) structure diagram of NiCo₂O₄ photodetector^[85]; (e) I-V curve of NiCo₂O₄ photodetector^[85]; (f) schematic diagram of ZnIn₂S₄ photodetector^[86]; (g) I-V curve of ZnIn₂S₄ photodetector under dark and illumination^[86]; (h) photograph of wearable device made of ZnIn₂S₄ films^[86].

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图 10 自支撑单晶氧化薄膜在介电储能中的应用　(a) NaNbO₃纳米片SEM图^[27]; (b) NaNbO₃纳米片高分辨透射电子显微镜(HRTEM)图^[27]; (c) NaNbO₃纳米片/PVDF储能性能^[27]; (d) 自支撑(100)取向BTO薄膜扫描透射电子显微镜(STEM)图^[94]; (e) (100)取向BTO/PVDF复合材料SEM图^[94]; (f) (100)取向BTO/PVDF复合材料电滞回线^[94]; (g) 自支撑(111)取向BTO薄膜HRTEM图^[95]; (h) (111)取向BTO/PVDF复合材料SEM图^[95]; (i) (111)取向BTO/PVDF复合材料电滞回线^[95]; (j) (111)取向BTO/PVDF复合材料电场分布图^[95]; (k) (111)取向BTO/PVDF复合材料击穿路径图^[95]

Fig. 10. Applications of freestanding single crystal oxide films in dielectric energy storage: (a) SEM diagram of NaNbO₃ nano sheet^[27]; (b) high-resolution transmission electron microscopy (HRTEM) diagram of NaNbO₃ nano sheet^[27]; (c) energy storage performance of NaNbO₃ nano chips/PVDF^[27]; (d) scanning transmission electron microscopy (STEM) diagram of freestanding (100) orientated BTO films^[94]; (e) (100) SEM diagram of orientated BTO/PVDF composite^[94]; (f) (100) hysteresis loop of orientated BTO/PVDF composites^[94]; (g) HRTEM of freestanding (111) orientated BTO films^[95]; (h) (111) SEM diagram of orientated BTO/PVDF composites^[95]; (i) (111) orientated BTO/PVDF composite hysteresis loop^[95]; (j) (111) electric field distribution diagram of orientated BTO/PVDF composites^[95]; (k) (111) breakdown path diagram of orientated BTO/PVDF composites^[95].

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图 11 自支撑单晶氧化薄膜在强关联体系中的应用　(a), (b)去离子水擦除功能性SAO层前后的SAO/STO异质层^[97]; (c) 滴加去离子水后SAO表面变化示意图及对应导电测试图^[97]; (d) LAO/STO薄膜低温状态的超导跃迁^[98]; (e) LAO/STO薄膜Dev.4的V-I曲线^[98]; (f) VO₂薄膜工艺的示意图^[28]; (g) 自支撑态下柔性VO₂薄膜实物图^[28]; (h) VO₂薄膜制备THz调制器^[28]

Fig. 11. Applications of freestanding single crystal oxide films in strong correlation system: (a), (b) SAO/STO heterogeneous layer before and after DI water resolving functional structure^[97]; (c) DI water drop affecting SAO layer and its conductivity change^[97]; (d) superconducting transitions of VO₂ film at low-temperature regime^[98]; (e) V-I curve of LAO/STO film Dev.4^[98]; (f) schematic diagram of fabrication of VO₂ film^[28]; (g) photograph of flexible freestanding VO₂ film^[28]; (h) preparation of THz modulator by VO₂ thin films^[28].

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图 12 自支撑单晶磁性氧化物的器件应用与功能性研究　(a) 云母及其他衬底上生长LSMO薄膜的磁阻曲线(15 K下)^[100]; (b) 10 K下自支撑LSMO薄膜的写入(W)、读取(R)与擦除(E)过程^[100]; (c)自支撑LSMO/BFO薄膜交换偏置场(HEB)与矫顽场(HC)随弯曲次数变化曲线^[101]; (d) Fe₃O₄薄膜原位弯曲的SEM照片^[36]; (e), (f) LCMO薄膜的双轴拉伸(8%应变)示意图以及双向应变LCMO膜的相图^[29]; (g)自支撑NZFO薄膜的弯曲示意图以及不同曲率下NZFO薄膜的铁磁共振场变化量^[106]; (h)转移前后SRO薄膜面内磁阻各向异性的对比图^[44]

Fig. 12. Applications and functional research of freestanding single crystal magnetic oxide devices: (a) Magnetoresistance curves of LSMO films grown on mica and other substrates (at 15 K)^[100]; (b) write (W), read (R) and erase (E) processes of freestanding LSMO films at 10 K^[100]; (c) curves of exchange bias field (HEB) and coercive field (HC) of freestanding LSMO/BFO film with bending times^[101]; (d) SEM photographs of in situ bending of Fe₃O₄ films^[36]; (e), (f) schematic diagram of biaxial stretching (8% strain) of LCMO film and phase diagram^[29]; (g) schematic diagram of the bending NZFO film and the change in the ferromagnetic resonance field at different curvatures^[106]; (h) in-plane magnetic resistance anisotropy of SRO film before and after transfer^[44].

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图 13 自支撑单晶氧化物新颖结构的应用　(a)通过焦耳热激活的微加热器执行器的侧视图^[111]; (b)施加方波电压时执行器的电阻^[111]; (c)电压驱动VO₂弹簧伸缩以及电阻变化^[117]; (d)温度门控热整流装置的扫描电子显微镜(SEM)图像^[31]; (e) VO₂纳米束的测量总热导率(ktot)和预期电子热导率的依赖性^[31]; (f)自加热VO₂微带状传感器对三种不同压力氦气脉冲的响应^[121]; (g)各种BTO褶皱(平行、锯齿形和马赛克)的光学显微镜图像^[123]; (h) LSMO/BTO纳米弹簧在拉伸过程中的原位SEM照片以及机械力与位移的关系^[124]

Fig. 13. Applications of novel freestanding single crystal oxides structures: (a) Side view of a microheater actuator activated by Joule heat^[111]; (b) the resistance of the actuator when a square wave voltage is applied^[111]; (c) the voltage-driven deformation of the VO₂ spring, accompanied by a change in resistance^[117]; (d) SEM of a temperature-gated thermal rectifier device consisting of two floating pads bridged by a VO₂ nanobeam^[31]; (e) dependence of measured total thermal conductivity (ktot) and expected electron thermal conductivity nanobeams^[31]; (f) response of self-heating VO₂ microstrip sensors to helium pulses at three different pressures^[121]; (g) light microscopic images of various BTO wrinkles (parallel, zigzag, and mosaic) at a scale of 20 μm^[123]; (h) in situ SEM of LSMO/BTO nanospring during stretching and mechanical force function determined by displacement^[124].

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图 14 自支撑单晶氧化物薄膜的堆叠整合　(a) CFO/PMN-PT膜异质结构的横截面TEM图像^[17]; (b) 由交流磁场强度诱导的PMN-PT(δV_ME)两端的感应电压^[17]; (c) 在室温下测量的CFO膜、YIG膜和CFO/YIG异质结构的面外磁滞回曲线^[17]; (d) 扭曲角为45°和100°的CGO/CGO双层与STO/STO双层薄膜的光学显微镜图像^[127]; (e) 10°扭转角堆叠的STO/STO界面的原子分辨率高角环形暗场扫描透射(HAADF-STEM)图像^[127]; (f) STO/STO异质结氧离子的示踪扩散系数(D*)与扭转角的关系^[127]; (g) 硅片上以24°扭转角堆叠STO膜的光学图像与示意图^[128]; (h) tBL-STO薄膜的莫尔条纹HRTEM图像和快速傅里叶变换晶格分析^[128]

Fig. 14. Stacking and twisting of freestanding single crystal oxide films: (a) Cross-sectional TEM image of the CFO/PMN-PT heterostructure^[17]; (b) the induced voltage across the PMN-PT (δV_ME) induced by the AC magnetic field^[17]; (c) out-of-plane magnetization curves of CFO, YIG, and CFO/YIG heterostructures at room temperature^[17]; (d) optical microscope images of CGO/CGO bilayer and STO/STO bilayer films with a twist angle of 45° and 100°^[127]; (e) atomic resolution High-Angle annular dark-field STEM image of STO/STO interface stacked at 10° twist angle^[127]; (f) the dependence of oxygen ions tracer diffusion coefficient (D*) and twist angle of STO/STO heterostructure^[127]; (g) optical images and schematics of STO films stacked at a 24° twist angle on silicon wafers^[128]; (h) HRTEM images of moiré stripes of tBL-STO film analysis and the corresponding fast Fourier transformed results^[128]

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表 1 铁电存储器材料及性能参数比较

Table 1. Comparison of ferroelectric films in information storage devices.

存储器件	材料体系	开关电压/V	开关比	保持特性/min	铁电功能层厚度/nm	柔性	文献
FTJs	PVDF	+2/–2	3—10	—	2.2—4.4	是	[67]
	Pt/BTO/LSMO	+2/–3	3	120	3.6	是	[61]
	Pt/PZT/PEDOT:PSS	+3.5/–3	10	—	4.8	是	[62]
	Pt/PZT/SRO/mica	+6/–6	2.4—108	35	—	是	[68]
	Au/Cu/BTO/LSMO/BTO/Si	+3/–2	100	30	2.8	否	[69]
Fe FET	MoS₂/BTO/Au/Ti/SiO₂/Si	+50/–50	10	—	48	否	[65]
Fe FET	Pt/ZnO/PZT/SRO/CFO/mica	+6/–6	1.4×10⁴	—	180	是	[70]

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表 2 压电能量收集器件的性能比较

Table 2. Comparison of piezoelectric energy harvesting devices.

压电材料	开路电压/V	短路电流/μA	电流密度/(μA·cm^–2)	功率密度/(μW·cm^–3)	文献
PZT film/PET	200	1.5	150	17500	[24]
PMN-PT film/PET	8.2	145	—	—	[75]
BTO film/PU/Plastic	1	0.026	0.19	7000	[19]
TOS-BTO Nanoparticles(Nps) /PVDF	20	—	—	15.6	[78]
PMMA@BTO Nanowires(Nws)/PVDF-TrFE	12.6	1.3	—	0.68	[79]
BTO@HBP@PMMA Nws/PVDF	3.4	0.32	—	—	[80]

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map

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