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二维材料异质结器件具有纳米级厚度及范德瓦耳斯接触表面, 因而表现出独特的光电特性. 本文构建了栅压可调的MoS2/MoTe2垂直异质结器件, 利用开尔文探针力显微镜(KPFM)技术结合电输运测量, 揭示了MoS2/MoTe2异质结分别在黑暗和532 nm激光照射条件下的电荷输运行为, 发现随着栅压的变化异质结表现出从n-n+结到p-n结的反双极性特征. 系统地解释了MoS2/MoTe2异质结的电荷输运机制, 包括n-n+结和p-n结在正偏和反偏下条件下的电荷输运过程、随栅压变化而发生的转变的结区行为、接触势垒对电荷输运的影响、n-n+结和p-n结具有不同整流特征的原因、偏压对带间隧穿的重要作用及光生载流子对电学输运行为的影响等. 本文所使用的方法可推广到其他二维异质结体系, 为提高二维半导体器件性能及其应用提供了重要的参考和借鉴.
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关键词:
- 二维过渡金属硫族化合物异质结 /
- 电荷传输机制 /
- 能带结构 /
- 开尔文探针力显微镜
The heterojunction device based on two-dimensional materials possesses unique photoelectric properties due to its nanoscale thickness and van der Waals (vdWs) contact surface. In this paper, a gate-voltage-tunable MoS2/MoTe2 vertical vdWs heterojunction device is constructed. The Kelvin probe force microscopy (KPFM) technology is combined with the electric transport measurement technology, thereby revealing the charge transport behavior of the MoS2/MoTe2 heterojunction under dark condition and laser-irradition condition, including the bipolarity characteristics of the transition from n-n+ junction to p-n junction. In this paper, the charge transport mechanism of heterojunction is explained comprehensively and systematically, including the charge transmission process of n-n+ junction and p-n junction under positive and negative bias conditions, the transformation of nodule behavior with gate voltage, the influence of barriers on charge transmission, the different rectification characteristics between n-n+ junction and p-n junction, the major role of source and leakage bias voltage in band tunneling, and the influence of photogenerated carriers on electrical transmission. The method in this work can be generalized to other two-dimensional heterojunction systems and also provide an important reference for improving the performance of two-dimensional semiconductor devices and their applications in the future.-
Keywords:
- two-dimensional transition metal chalcogenide heterojunction /
- charge transmission mechanism /
- energy band structure /
- Kelvin probe force microscope
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图 1 MoS2/MoTe2异质结器件及其电学性质 (a) MoS2/MoTe2异质结器件的示意图; (b) MoS2/MoTe2异质结器件的光学图像; (c) MoS2/MoTe2异质结的拉曼光谱; (d) MoS2/MoTe2异质结的能带结构; (e) MoS2/MoTe2异质结器件转移曲线; (f) MoS2/MoTe2异质结器件输出曲线
Fig. 1. MoS2/MoTe2 heterojunction devices and it’s electrical properties: (a) Diagrammatic sketch of MoS2/MoTe2 heterojunction device; (b) optical image of the MoTe2/MoS2 heterostructure device; (c) Raman spectra of MoTe2/MoS2 heterojunction; (d) band structure of the MoTe2/MoS2 heterojunction; (e) transfer curves of MoS2/MoTe2 heterojunction device; (f) output curves of MoS2/MoTe2 heterojunction device.
图 2 MoS2/MoTe2异质结器件的电学特性 (a) Vds = –6 V时不同功率下的转移曲线; (b) Vds = +6 V时不同功率下的转移曲线; (c) Vg = +40 V时不同功率下的输出曲线; (d) Vg = –10 V时不同功率下的输出曲线; (e) 在Vg
$\gg $ 0和Vg$\ll $ 0条件下, MoS2/MoTe2异质结的能带结构Fig. 2. Electrical characteristics of MoTe2/MoS2 heterojunction device: (a) Power intensity-dependent Ids-Vg curves, Vds = –6 V; (b) power intensity-dependent Ids-Vg curves, Vds = +6 V; (c) power intensity-dependent Ids-Vds curves, Vg = +40 V; (d) power intensity-dependent Ids-Vds, Vg = –10 V; (e) band structure of MoTe2/MoS2 heterojunction at Vg
$\gg $ 0 and Vg$\ll$ 0.
图 3 MoS2/MoTe2异质结器件的表面电势分布 (a) KPFM原理示意图; (b) MoS2/MoTe2异质结的AFM图像; (c) Vds = +2 V时异质结器件的表面电势分布; (d) Vds = –2 V时异质结器件的表面电势分布
Fig. 3. Surface potential distribution of MoS2/MoTe2 heterojunction devices: (a) Schematic diagram of KPFM; (b) AFM image of MoS2/MoTe2 heterojunction; (c) surface potential distribution of heterojunction device, Vds = +2 V; (d) surface potential distribution of heterojunction device, Vds = –2 V.
图 4 MoTe2/MoS2异质结器件的表面电势分布及其物理机理 (a) Vds = +2 V时的表面电势归一化数据; (b), (c) Vds＞0时的能带结构; (d) Vds = –2 V时的表面电势归一化数据; (e), (f) Vds＜0的能带结构
Fig. 4. Surface potential distribution of vertical MoTe2/MoS2 heterojunction device and it’s physical mechanism: (a) Surface potential normalized profiles of heterojunction, Vds = +2 V; (b), (c) band structure of heterojunction, Vds＞0; (d) surface potential normalized profiles of heterojunction, Vds = –2 V; (e), (f) band structure of heterojunction, Vds＜0.
图 5 光照前后MoTe2/MoS2异质结器件的表面电位分布及机理 (a) Vds = +2 V; (b) Vds = –2 V
Fig. 5. Surface potential distribution of MoTe2/MoS2 heterojunction device and it’s physical mechanism before and after illumination: (a) Vds = +2 V; (b) Vds = –2 V.
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[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
Google Scholar
[2] Manzeli S, Ovchinnikov D, Pasquier D, Yazyev O V, Kis A 2017 Nat. Rev. Mater. 2 17033
Google Scholar
[3] Li L K, Yu Y J, Ye G J, Ge Q Q, Ou X D, Wu H, Feng D L, Chen X H, Zhang Y B 2014 Nat. Nanotechnol. 9 372
Google Scholar
[4] Song L, Ci L J, Lu H, Sorokin P B, Jin C H, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I 2010 Nano Lett. 10 3209
Google Scholar
[5] Jian S K, Jiang Y F, Yao H 2015 Phys. Rev. Lett. 114 237001
Google Scholar
[6] Lozovoy K A, Izhnin I I, Kokhanenko A P, Dirko V V, Vinarskiy V P, Voitsekhovskii A V, Fitsych O I, Akimenko N Y 2022 Nanomaterials 12 2221
Google Scholar
[7] Novoselov K S, Mishchenko A, Carvalho A, Neto A H C 2016 Science 353 aac9439
Google Scholar
[8] Iannaccone G, Bonaccorso F, Colombo L, Fiori G 2018 Nat. Nanotechnol. 13 183
Google Scholar
[9] Zeng M Q, Xiao Y, Liu J X, Yang K, Fu L 2018 Chem. Rev. 118 6236
Google Scholar
[10] Chi Z H, Chen X L, Yen F, Peng F, Zhou Y H, Zhu J L, Zhang Y J, Liu X D, Lin C L, Chu SQ 2018 Phys. Rev. Lett. 120 037002
Google Scholar
[11] Fei Z Y, Zhao W J, Palomaki T A, Sun B S, Miller M K, Zhao Z Y, Yan J Q, Xu X D, Cobden D H 2018 Nature 560 336
Google Scholar
[12] Bonilla M, Kolekar S, Ma Y J, Diaz H C, Kalappattil V, Das R, Eggers T, Gutierrez H R, Phan M H, Batzill M 2018 Nat. Nanotechnol. 13 289
Google Scholar
[13] Li T X, Jiang S W, Shen B, Zhang Y, Li L Z, Tao Z, Trithep D, Kenji W, Takashi T, Fu L, Shan J, Kin F M 2022 Nature 600 641
Google Scholar
[14] Guo H W, Hu Z, Liu Z B, Tian J G 2021 Adv. Funct. Mater. 31 2007810
Google Scholar
[15] Liu Y, Weiss N O, Duan X D, Cheng H C, Huang Y, Duan X F 2016 Nat. Rev. Mater. 1 16042
Google Scholar
[16] Cheng R, Li D H, Zhou H L, Wang C, Yin A X, Jiang S, Liu Y, Chen Y, Huang Y, Duan X F 2014 Nano Lett. 14 5590
Google Scholar
[17] Lee C H, Lee G H, van der Zande A M, Chen W C, Li Y L, Han M Y, Cui X, Arefe G, Nuckolls C, Heinz T F, Guo J, Hone J, Kim P 2014 Nat. Nanotechnol. 9 676
Google Scholar
[18] Zhang K A, Zhang T N, Cheng G H, Li T X, Wang S X, Wei W, Zhou X H, Yu W W, Sun Y, Wang P, Zhang D, Zeng C G, Wang X J, Hu W D, Fan H J, Shen G Z, Chen X, Duan X F, Chang K, Dai N 2016 ACS Nano 10 3852
Google Scholar
[19] Nowack K C, Spanton E M, Baenninger M, Konig M, Kirtley J R, Kalisky B, Ames C, Leubner P, Brune C, Buhmann H, Molenkamp L W, Goldhaber-Gordon D, Moler K A 2013 Nature 12 787
Google Scholar
[20] Duong N T, Lee J, Bang S, Park C, Lim S C, Jeong M S 2019 ACS Nano 13 4478
Google Scholar
[21] Cao G M, Meng P, Chen J G, Liu H S, Bian R J, Zhu C, Liu F C, Liu Z 2021 Adv. Funct. Mater. 31 2005443
Google Scholar
[22] Nazir G, Kim H, Kim J, Kim K S, Shin D H, Khan M F, Lee D S, Hwang J Y, Hwang C, Suh J, Eom J, Jung S 2018 Nat. Commun. 9 5371
Google Scholar
[23] Khan S, Khan A, Azadmanjiri J, Roy P K, Děkanovský L, Sofer Z, Numan A 2022 Adv. Photonics Res. 3 2100342
Google Scholar
[24] Melitz W, Shen J, Kummel AC, Lee S 2011 Surf. Sci. Rep. 66 1
Google Scholar
[25] Grzeszczyk M, Golasa K, Zinkiewicz M, Nogajewski K, Molas M R, Potemski M, Wysmolek A, Babinski A 2016 2D Mater. 3 025010
Google Scholar
[26] Golasa K, Grzeszczyk M, Bozek R, Leszczynski P, Wysmolek A, Potemski M, Babinski A 2014 Solid State Commun. 197 53
Google Scholar
[27] Balaji Y, Smets Q, Szabo A, Mascaro M, Lin D, Asselberghs I, Radu I, Luisier M, Groeseneken G 2020 Adv. Funct. Mater. 30 1905970
Google Scholar
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