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制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al, Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比Ion/Ioff等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移.
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关键词:
- 有机场效应晶体管 /
- CuI/Al双层源漏电极 /
- 电子转移
An organic field-effect transistor based on pentacene semiconductor with CuI/Al bilayer electrode is investigated. The CuI layer, directly contacting the organic semiconductor layer, serves as the hole-injection layer. The overcoated metal layer is responsible for the reduction in contact barrier. Compared with the device with a single metal (Al, Au) layer used as the source-drain electrode, the device with CuI/Al electrodes considerably improves the hole mobility and the on/off current ratio and greatly reduces the threshold voltage. Results of X-ray photoelectron and ultraviolet/visible absorption studies reveal that the reduction in the contact barrier can be attributed to an electron transfer from pentacene and Al to CuI.[1] Dimitrakopoulos C D, Malenfant P R L 2002 Adv. Mater. 14 99
[2] Crone B K, Dodabalapur A, Sarpeshkar R, Filas W R, Bao Z, ONeill J H, Li W, Katz H E 2001 J. Appl. Phys. 89 5125
[3] [4] [5] Wu Y L, Li Y N, Gardner S, Ong B S 2005 J. Am. Chem. Soc. 127 614
[6] Briseno A L, Roberts M, Ling M M, Moon H, Nemanick E J, Bao Z 2006 J. Am. Chem. Soc. 128 3880
[7] [8] [9] Yuan G C, Xu Z, Zhao S L, Zhang F J, Xu N, Sun Q J, Xu X R 2009 Acta Phys. Sin. 58 4941 (in Chinese)[袁广才、徐 征、赵谡玲、张福俊、许 娜、孙钦军、徐叙瑢 2009 58 4941]
[10] [11] Watkins N J, Yan L, Gao Y 2002 Appl. Phys. Lett. 80 4384
[12] Chen F C, Kung L J, Chen T H 2007 Appl. Phys. Lett. 90 073504
[13] [14] [15] Murdoch G B, Greiner M, Helander M G, Wang Z B, Lu Z H 2008 Appl. Phys. Lett. 93 083309
[16] Chu C W, Li S H, Chem C W, Shrotriya V, Yang Y 2005 Appl. Phys. Lett. 87 193508
[17] [18] [19] Kanno H, Holmes R J, Sun Y, Kena-Cohen S, Forrest S R 2006 Adv. Mater. 18 339
[20] Schroeder R, Majewski L A, Grell M 2004 Appl. Phys. Lett. 84 1004
[21] [22] Jun L, Xiao W Z, Liang Z, Khizar U H, Xue Y J, Wen Q Z, Zhi L Z 2009 Solid State Commun. 149 1826
[23] [24] Lee J H, Leem D S, Kim J J 2008 Org. Electron. 9 805
[25] [26] [27] Kumarasinghe A R, Flavell W R, Thomas A G, Mallick A K, Tsoutsou C, Chatwin C, Rayner S, Kirkham P, Warren S, Patel S, Christian P, OBrien P, Hengerer R 2007 J. Chem. Phys. 127 114703
[28] [29] Sze S M 1981 Physics of Semiconductor Devices (2nd ed) (New York: Wiley) p442
[30] [31] Lee J H, Leem D S, Kim H J, Kim J J 2009 Appl. Phys. Lett. 94 123306
[32] [33] Matsushima T, Kinoshita Y, Murata H 2007 Appl. Phys. Lett. 91 253504
[34] [35] Koch N, Duhm S, Rabe J P, Vollmer A, Johnson R L 2005 Phys. Rev. Lett. 95 237601
[36] [37] Koch N, Duhm S, Rabe J P, Rentenberger S, Johnson R L, Klankermayer J, Schreiber F 2005 Appl. Phys. Lett. 87 101905
[38] Muller R S, Kamins T I 2003 Device Electronics for Integrated Circuits (3rd ed) (New York: John Wiley Sons) p390
[39] [40] [41] Taguchi T, Zhang X, Sunanto I, Tokuhiro K, Rao T N, Watanabe H, Nakamori T, Uragami M, Fujishima A 2003 Chem. Commun. 19 2480
[42] [43] Hamadani B H, Ding H, Gao Y, Natelsonl D 2005 Phys. Rev. B 72 235302
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[1] Dimitrakopoulos C D, Malenfant P R L 2002 Adv. Mater. 14 99
[2] Crone B K, Dodabalapur A, Sarpeshkar R, Filas W R, Bao Z, ONeill J H, Li W, Katz H E 2001 J. Appl. Phys. 89 5125
[3] [4] [5] Wu Y L, Li Y N, Gardner S, Ong B S 2005 J. Am. Chem. Soc. 127 614
[6] Briseno A L, Roberts M, Ling M M, Moon H, Nemanick E J, Bao Z 2006 J. Am. Chem. Soc. 128 3880
[7] [8] [9] Yuan G C, Xu Z, Zhao S L, Zhang F J, Xu N, Sun Q J, Xu X R 2009 Acta Phys. Sin. 58 4941 (in Chinese)[袁广才、徐 征、赵谡玲、张福俊、许 娜、孙钦军、徐叙瑢 2009 58 4941]
[10] [11] Watkins N J, Yan L, Gao Y 2002 Appl. Phys. Lett. 80 4384
[12] Chen F C, Kung L J, Chen T H 2007 Appl. Phys. Lett. 90 073504
[13] [14] [15] Murdoch G B, Greiner M, Helander M G, Wang Z B, Lu Z H 2008 Appl. Phys. Lett. 93 083309
[16] Chu C W, Li S H, Chem C W, Shrotriya V, Yang Y 2005 Appl. Phys. Lett. 87 193508
[17] [18] [19] Kanno H, Holmes R J, Sun Y, Kena-Cohen S, Forrest S R 2006 Adv. Mater. 18 339
[20] Schroeder R, Majewski L A, Grell M 2004 Appl. Phys. Lett. 84 1004
[21] [22] Jun L, Xiao W Z, Liang Z, Khizar U H, Xue Y J, Wen Q Z, Zhi L Z 2009 Solid State Commun. 149 1826
[23] [24] Lee J H, Leem D S, Kim J J 2008 Org. Electron. 9 805
[25] [26] [27] Kumarasinghe A R, Flavell W R, Thomas A G, Mallick A K, Tsoutsou C, Chatwin C, Rayner S, Kirkham P, Warren S, Patel S, Christian P, OBrien P, Hengerer R 2007 J. Chem. Phys. 127 114703
[28] [29] Sze S M 1981 Physics of Semiconductor Devices (2nd ed) (New York: Wiley) p442
[30] [31] Lee J H, Leem D S, Kim H J, Kim J J 2009 Appl. Phys. Lett. 94 123306
[32] [33] Matsushima T, Kinoshita Y, Murata H 2007 Appl. Phys. Lett. 91 253504
[34] [35] Koch N, Duhm S, Rabe J P, Vollmer A, Johnson R L 2005 Phys. Rev. Lett. 95 237601
[36] [37] Koch N, Duhm S, Rabe J P, Rentenberger S, Johnson R L, Klankermayer J, Schreiber F 2005 Appl. Phys. Lett. 87 101905
[38] Muller R S, Kamins T I 2003 Device Electronics for Integrated Circuits (3rd ed) (New York: John Wiley Sons) p390
[39] [40] [41] Taguchi T, Zhang X, Sunanto I, Tokuhiro K, Rao T N, Watanabe H, Nakamori T, Uragami M, Fujishima A 2003 Chem. Commun. 19 2480
[42] [43] Hamadani B H, Ding H, Gao Y, Natelsonl D 2005 Phys. Rev. B 72 235302
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