超材料微波磁导率色散行为的电可调控性研究

钟顺林; 韩满贵; 邓龙江

doi:10.7498/aps.60.117501

摘要

研究在开口金属谐振环(SRR)结构嵌入一个电容二极管后,通过电压调控二极管的电容使得SRR结构的等效电容值发生改变,能实现对SRR的谐振频率和等效磁导率的调控,从而提出了一种智能的微波磁性超材料结构.采用时域差分有限元法(Finite-Difference Time-Domain)和恢复算法模拟了变容二极管的工作电压变化下,SRR结构谐振频率和磁导率的变化规律.研究结果表明工作电压增大使变容二极管的电容值减小时,将导致SRR结构的谐振频率向低频段移动,其磁导率的共振频率也将向低频移动.最后指出了SRR结构与常规磁性材料(如铁氧体)磁导率色散行为的不同之处.

关键词:

超材料 /
微波磁导率

Abstract

By embedding a capacity-variable diode into a split ring resonator (SRR), it is found that the effective capacitance of such an SRR element can be varied by the biased voltage of diode. Therefore the resonance frequency and effective permeability of an SRR element can be tuned. Based on these results, a smart microwave magnetic metamaterial is proposed. Employing the finite-difference time-domain and retrieval method, the variations of resonance frequency and permeability of the SRR element are simulated and calculated by changing the biased voltage. It is found that with the decrease of capacitance due to the increase of biased voltage, the resonance frequencies are shifted towards lower values, and so are the resonance frequencies of permeability dispersion. Finally, the difference in permeability dispersion behavior between SRR structure and natural magnetic material (for instance, ferrite) has been pointed out.

Keywords:

metamaterials /
microwave permeability

作者及机构信息

1.
电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054

基金项目: 国家重点基础研究发展计划(批准号:2010CB334702)、国防预先研究基金项目(批准号:9140A10030409DZ0228)、国家基金杰出青年基金项目(批准号:51025208)和中央高校基本科研业务费(批准号:ZYGX2009J036)资助的课题.

Authors and contacts

1.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

参考文献

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施引文献

[1]	Wang X, Zheng F, Liu Z Y, Liu X X, Wei D, Wei F L 2009 J. Appl. Phys. 105 07B714
[2]	Ledieu M, Schoenstein F, Le Gallou J H, Valls O, Queste S, Duverger F, Acher O 2003 J. Appl. Phys. 93 7202
[3]
[4]
[5]	Xie J L, Han M G, Chen L, Kuang R X, Deng L J 2007 J. Magn. Magn. Mater. 314 37
[6]	Kim S S, Kim S T, Yoon Y C, Lee K S 2005 J. Appl. Phys. 97 10F905
[7]
[8]	Deng L J, Han M G 2007 Appl. Phys. Lett. 91 023119
[9]
[10]
[11]	Lubitz P, Rachford F J 2002 J. Appl. Phys. 91 7613
[12]	Chen W B, Han M G, Deng L J 2010 Acta Phys. Sin. 60 712 (in Chinese) [陈文兵、韩满贵、邓龙江 2010 60 712]
[13]
[14]
[15]	Li Z W, Chen L F, Ong C K 2003 J. Appl. Phys. 94 5918
[16]	Tsutaoka T 2003 J. Appl. Phys. 93 2789
[17]
[18]
[19]	Li B W, Shen Y, Yue Z X, Nan C W 2007 J. Magn. Magn. Mater. 313 322
[20]
[21]	Lagarkov A N, Rozanov K N, Simonov N A, Starostenko S S 2005 Handbook of Advanced Magnetic Materials (Beijing: Tsinghua University Press), Vol. 4, pp414-445
[22]	Han M G, Lu H P, Deng L J 2010 Appl. Phys. Lett. 97 192507
[23]
[24]	Han M G, Ou Y, Liang D F, Deng L J 2009 Chin. Phys. B 18 1261
[25]
[26]
[27]	Lee J J, Bae S, Hong Y K, Jalli J, Abo G S, Seong W M, Park S H, Choi C J, Lee J G 2009 J. Appl. Phys. 105 07A514
[28]	Veselago V G 1968 Sov. Phys. Usp. 10 509
[29]
[30]	Pendry J B, Holden A J, Robbins D J, Stewart W J 1999 IEEE Trans. Microwave Theory Tech. 47 2075
[31]
[32]
[33]	Smith D R, Padilla W J, Vier D C, Nemat-Nasser S C, Schultz S 2000 Phys. Rev. Lett. 84 4184
[34]
[35]	Pendry J B, Holden A J, Stewart W J, Youngs I 1996 Phys. Rev. Lett.76 4733
[36]
[37]	Fu F Y, Chen W, Zhou W J, Liu A J, Xing M X, Wang Y F, Zheng W H 2010 Acta Phys. Sin. 59 8579 (in Chinese) [付非亚、陈微、周文君、刘安金、邢名欣、王宇飞、郑婉华 2010 物理学报 59 8579]
[38]	Kabashin A V, Evans P, Pastkovsky S, Hendren W, Wurtz G A, Atkinson R, Pollard R, Podolskiy V A, Zayats A V 2009 Nature Mater. 8 867
[39]
[40]
[41]	Shelby R A, Smith D R, Schultz S 2001 Science 292 77
[42]	Xiang J K, Ma Z H, Zhao Y, Zhao X P 2010 Acta Phys. Sin. 59 4023 (in Chinese) [相建凯、马忠洪、赵延、赵晓鹏 2010 59 4023]
[43]
[44]	Wen R M, Li L Y, Han K W, Sun X W 2010 Acta Phys. Sin. 59 4607 (in Chinese)[闻孺铭、李凌云、韩克武、孙晓玮 2010 59 4607]
[45]
[46]	Tang N J, Zhong W, Au C, Yang Y, Han M G, Lin K J, Du Y W 2008 J. Phys. Chem. C 112 19316
[47]
[48]	Lian L X, Deng L J, Han M, Tang W, Feng S D 2007 J. Appl. Phys.101 09M520
[49]
[50]	Zhao Q, Kang L, Du B, Li B, Zhou J 2007 Appl. Phys. Lett. 90 011112
[51]
[52]
[53]	Hand T H, Gollub J, Sajuyigbe S, Cummer S A, Smith D R 2009 Appl. Phys. Lett. 93 212504
[54]
[55]
[56]	Ai F, Bai Y, Xu F, Qiao L J, Zhou J 2008 Acta Phys. Sin. 57 4189(in Chinese)[艾芬、白洋、徐芳、乔利杰、周济 2008 57 4189]
[57]	Wang M Y 2008 Ph. D. Dissertation (Chengdu:University of Electronic Science and Technology of China) (in Chinese) [王茂琰 2008 博士学位论文(成都:电子科技大学)]
[58]
[59]	Smith D R, Vier D C, Koschny Th, Soukoulis C M 2005 Phys. Rev. Lett.71 036617
[60]
[61]
[62]	Chen X D, Tomasz M, Wu B I, Pacheco J, Kong J A 2004 Phys. Rev. Lett. 70 016608
[63]
[64]	Chen X D 2005 Ph. D. Dissertation (Hangzhou:Zhejiang University) (in Chinese)[陈旭东2005 博士学位论文(杭州:浙江大学)]

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