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采用传统提拉法单晶生长技术成功生长出了Cr,Mg:GSGG晶体, 并对生长出的晶体样品进行了氧化气氛和还原气氛退火处理. 通过对比分析退火处理前后样品吸收光谱的变化, 推断出晶体中四面体配位Cr4+离子的形成机理为: 晶体生长和高温氧化气氛退火的过程中, 四价Cr4+离子首先在八面体格位上形成, 然后在热激发作用下与邻近四面体格位上的Ga3+离子发生置换反应, 从而形成一定浓度的四面体配位Cr4+离子. 实验结果还表明, 随着电荷补偿离子Mg2+离子浓度的增大, 更有利于提高四面体配位Cr4+离子的浓度.
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关键词:
- Cr,Mg:GSGG单晶 /
- 退火处理 /
- 四面体格位 /
- 光谱性质
Cr,Mg:GSGG crystals are successfully grown by the Czochralski method. The influences of reducing- and oxidizing- annealing treatments on the absorption spectra of Cr,Mg:GSGG crystals are investigated. From the changes of their absorption spectra, it can be inferred that the Cr4+ ions are initially generated at octahedrally coordinated sites, and then exchange positions with tetrahedral Ga3+ ions in neighboring sites under heat exciting. Differences between absorption spectra also suggest that Mg2+ ions can improve the concentration of tetrahedral Cr4+ ions.-
Keywords:
- Cr,Mg:GSGG crystal /
- annealing treatment /
- tetrahedral sites /
- spectroscopic characteristics
[1] Yankov P 1994 J. Phys. D 27 1118
[2] Wu Z H, Song F, Liu S J, Cai H, Su J, Tian J G, Zhang G Y 2006 Acta Phys. Sin. 55 4659 (in Chinese)
[3] Yumashev K V, Denisov I A, Posnov N N, Kuleshov N V, Moncorge R 2000 J. Alloys Compd. 341 366
[4] Malyarevich A M, Denisov I A, Yumashev K V, Mikhailov V P, Conroy R S, Sinclair B D 1998 Appl. Phys. B 67 555
[5] Burshtein Z, Shimony Y, Feldman R, Krupkin V, Glushko A, Galun E 2001 Opt. Mat. 15 285
[6] Su L B, Zhang D, Li H J, Qian X B, Shen J, Zhou G Q, Xu J 2006 Acta Phys. Sin. 55 5987 (in Chinese)
[7] Song Y J, Hu M L, Xie C, Chai L, Wang Q M 2010 Acta Phys. Sin. 59 7105 (in Chinese)
[8] Xia P K, Yu H J, Yan P, Gong M L 2010 Chin. Phys. B 19 044205
[9] Kalisky Y 2004 Prog. Quant. Electron. 28 249
[10] Lipavsky B, Kalisky Y, Burshtein Z, Shimony Y, Rotman S 1999 Opt. Mater. 13 117
[11] Xu Y N, Ching W Y, Brickeen B K 2000 Phys. Rev. B 61 1817
[12] Danileéko Yu K, Zharikov E V, Laptev V V, Minaev Yu P, Nikolaev V N, Sidorin A V, Toropkin G N, Shcherbakov I A 1985 Sov. J. Quantum Electron. 15 286
[13] Sun D L, Luo J Q, Xiao J Z, Zhang Q L, Jiang H H, Yin S T,Wang Y F, Ge X W 2008 Appl. Phys. B 92 529
[14] Sun D L, Luo J Q, Zhang Q L, Xiao J Z, Xu J Y, Jiang H H, Yin S T 2008 J. Lumin. 128 1886
[15] French S E, Browh D J W, Konwles D S, Piper J A 1998 Appl. Opt. 37 536
[16] Struve B, Huber G 1985 Appl. Phys. B 36 195
[17] Tsai C N, Huang K Y, Tsai H J, Chen J C, Lin Y S, Huang S L, Lin Y S 2008 J. Crystal Growth. 310 2774
[18] Feldman R, Shimony Y, Burshtein Z 2003 Opt. Mater. 24 333
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[1] Yankov P 1994 J. Phys. D 27 1118
[2] Wu Z H, Song F, Liu S J, Cai H, Su J, Tian J G, Zhang G Y 2006 Acta Phys. Sin. 55 4659 (in Chinese)
[3] Yumashev K V, Denisov I A, Posnov N N, Kuleshov N V, Moncorge R 2000 J. Alloys Compd. 341 366
[4] Malyarevich A M, Denisov I A, Yumashev K V, Mikhailov V P, Conroy R S, Sinclair B D 1998 Appl. Phys. B 67 555
[5] Burshtein Z, Shimony Y, Feldman R, Krupkin V, Glushko A, Galun E 2001 Opt. Mat. 15 285
[6] Su L B, Zhang D, Li H J, Qian X B, Shen J, Zhou G Q, Xu J 2006 Acta Phys. Sin. 55 5987 (in Chinese)
[7] Song Y J, Hu M L, Xie C, Chai L, Wang Q M 2010 Acta Phys. Sin. 59 7105 (in Chinese)
[8] Xia P K, Yu H J, Yan P, Gong M L 2010 Chin. Phys. B 19 044205
[9] Kalisky Y 2004 Prog. Quant. Electron. 28 249
[10] Lipavsky B, Kalisky Y, Burshtein Z, Shimony Y, Rotman S 1999 Opt. Mater. 13 117
[11] Xu Y N, Ching W Y, Brickeen B K 2000 Phys. Rev. B 61 1817
[12] Danileéko Yu K, Zharikov E V, Laptev V V, Minaev Yu P, Nikolaev V N, Sidorin A V, Toropkin G N, Shcherbakov I A 1985 Sov. J. Quantum Electron. 15 286
[13] Sun D L, Luo J Q, Xiao J Z, Zhang Q L, Jiang H H, Yin S T,Wang Y F, Ge X W 2008 Appl. Phys. B 92 529
[14] Sun D L, Luo J Q, Zhang Q L, Xiao J Z, Xu J Y, Jiang H H, Yin S T 2008 J. Lumin. 128 1886
[15] French S E, Browh D J W, Konwles D S, Piper J A 1998 Appl. Opt. 37 536
[16] Struve B, Huber G 1985 Appl. Phys. B 36 195
[17] Tsai C N, Huang K Y, Tsai H J, Chen J C, Lin Y S, Huang S L, Lin Y S 2008 J. Crystal Growth. 310 2774
[18] Feldman R, Shimony Y, Burshtein Z 2003 Opt. Mater. 24 333
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