2010, 59(3): 1403-1408.
DOI: 10.7498/aps.59.1403
CSTR: 32037.14.aps.59.1403
2010, 59(3): 1409-1415.
DOI: 10.7498/aps.59.1409
CSTR: 32037.14.aps.59.1409
2010, 59(3): 1416-1422.
DOI: 10.7498/aps.59.1416
CSTR: 32037.14.aps.59.1416
2010, 59(3): 1423-1427.
DOI: 10.7498/aps.59.1423
CSTR: 32037.14.aps.59.1423
2010, 59(3): 1428-1436.
DOI: 10.7498/aps.59.1428
CSTR: 32037.14.aps.59.1428
2010, 59(3): 1437-1448.
DOI: 10.7498/aps.59.1437
CSTR: 32037.14.aps.59.1437
2010, 59(3): 1449-1455.
DOI: 10.7498/aps.59.1449
CSTR: 32037.14.aps.59.1449
2010, 59(3): 1456-1461.
DOI: 10.7498/aps.59.1456
CSTR: 32037.14.aps.59.1456
2010, 59(3): 1468-1472.
DOI: 10.7498/aps.59.1468
CSTR: 32037.14.aps.59.1468
2010, 59(3): 1473-1480.
DOI: 10.7498/aps.59.1473
CSTR: 32037.14.aps.59.1473
2010, 59(3): 1481-1486.
DOI: 10.7498/aps.59.1481
CSTR: 32037.14.aps.59.1481
2010, 59(3): 1487-1493.
DOI: 10.7498/aps.59.1487
CSTR: 32037.14.aps.59.1487
2010, 59(3): 1494-1498.
DOI: 10.7498/aps.59.1494
CSTR: 32037.14.aps.59.1494
2010, 59(3): 1499-1506.
DOI: 10.7498/aps.59.1499
CSTR: 32037.14.aps.59.1499
2010, 59(3): 1507-1523.
DOI: 10.7498/aps.59.1507
CSTR: 32037.14.aps.59.1507
2010, 59(3): 1524-1531.
DOI: 10.7498/aps.59.1524
CSTR: 32037.14.aps.59.1524
2010, 59(3): 1532-1539.
DOI: 10.7498/aps.59.1532
CSTR: 32037.14.aps.59.1532
2010, 59(3): 1540-1548.
DOI: 10.7498/aps.59.1540
CSTR: 32037.14.aps.59.1540
2010, 59(3): 1549-1553.
DOI: 10.7498/aps.59.1549
CSTR: 32037.14.aps.59.1549
2010, 59(3): 1554-1561.
DOI: 10.7498/aps.59.1554
CSTR: 32037.14.aps.59.1554
2010, 59(3): 1568-1575.
DOI: 10.7498/aps.59.1568
CSTR: 32037.14.aps.59.1568
2010, 59(3): 1576-1582.
DOI: 10.7498/aps.59.1576
CSTR: 32037.14.aps.59.1576
2010, 59(3): 1583-1592.
DOI: 10.7498/aps.59.1583
CSTR: 32037.14.aps.59.1583
2010, 59(3): 1593-1599.
DOI: 10.7498/aps.59.1593
CSTR: 32037.14.aps.59.1593
2010, 59(3): 1600-1607.
DOI: 10.7498/aps.59.1600
CSTR: 32037.14.aps.59.1600
2010, 59(3): 1608-1614.
DOI: 10.7498/aps.59.1608
CSTR: 32037.14.aps.59.1608
2010, 59(3): 1615-1619.
DOI: 10.7498/aps.59.1615
CSTR: 32037.14.aps.59.1615
2010, 59(3): 1620-1624.
DOI: 10.7498/aps.59.1620
CSTR: 32037.14.aps.59.1620
2010, 59(3): 1632-1637.
DOI: 10.7498/aps.59.1632
CSTR: 32037.14.aps.59.1632
2010, 59(3): 1638-1642.
DOI: 10.7498/aps.59.1638
CSTR: 32037.14.aps.59.1638
2010, 59(3): 1643-1650.
DOI: 10.7498/aps.59.1643
CSTR: 32037.14.aps.59.1643
2010, 59(3): 1651-1657.
DOI: 10.7498/aps.59.1651
CSTR: 32037.14.aps.59.1651
2010, 59(3): 1658-1664.
DOI: 10.7498/aps.59.1658
CSTR: 32037.14.aps.59.1658
2010, 59(3): 1665-1670.
DOI: 10.7498/aps.59.1665
CSTR: 32037.14.aps.59.1665
2010, 59(3): 1677-1680.
DOI: 10.7498/aps.59.1677
CSTR: 32037.14.aps.59.1677
2010, 59(3): 1695-1701.
DOI: 10.7498/aps.59.1695
CSTR: 32037.14.aps.59.1695
2010, 59(3): 1702-1706.
DOI: 10.7498/aps.59.1702
CSTR: 32037.14.aps.59.1702
2010, 59(3): 1707-1711.
DOI: 10.7498/aps.59.1707
CSTR: 32037.14.aps.59.1707
2010, 59(3): 1712-1720.
DOI: 10.7498/aps.59.1712
CSTR: 32037.14.aps.59.1712
2010, 59(3): 1721-1725.
DOI: 10.7498/aps.59.1721
CSTR: 32037.14.aps.59.1721
2010, 59(3): 1726-1733.
DOI: 10.7498/aps.59.1726
CSTR: 32037.14.aps.59.1726
2010, 59(3): 1734-1739.
DOI: 10.7498/aps.59.1734
CSTR: 32037.14.aps.59.1734
2010, 59(3): 1740-1748.
DOI: 10.7498/aps.59.1740
CSTR: 32037.14.aps.59.1740
2010, 59(3): 1749-1755.
DOI: 10.7498/aps.59.1749
CSTR: 32037.14.aps.59.1749
2010, 59(3): 1756-1761.
DOI: 10.7498/aps.59.1756
CSTR: 32037.14.aps.59.1756
2010, 59(3): 1762-1768.
DOI: 10.7498/aps.59.1762
CSTR: 32037.14.aps.59.1762
2010, 59(3): 1769-1774.
DOI: 10.7498/aps.59.1769
CSTR: 32037.14.aps.59.1769
2010, 59(3): 1775-1779.
DOI: 10.7498/aps.59.1775
CSTR: 32037.14.aps.59.1775
2010, 59(3): 1780-1785.
DOI: 10.7498/aps.59.1780
CSTR: 32037.14.aps.59.1780
2010, 59(3): 1786-1790.
DOI: 10.7498/aps.59.1786
CSTR: 32037.14.aps.59.1786
2010, 59(3): 1791-1796.
DOI: 10.7498/aps.59.1791
CSTR: 32037.14.aps.59.1791
2010, 59(3): 1797-1801.
DOI: 10.7498/aps.59.1797
CSTR: 32037.14.aps.59.1797
2010, 59(3): 1802-1808.
DOI: 10.7498/aps.59.1802
CSTR: 32037.14.aps.59.1802
2010, 59(3): 1823-1830.
DOI: 10.7498/aps.59.1823
CSTR: 32037.14.aps.59.1823
2010, 59(3): 1831-1838.
DOI: 10.7498/aps.59.1831
CSTR: 32037.14.aps.59.1831
2010, 59(3): 1847-1850.
DOI: 10.7498/aps.59.1847
CSTR: 32037.14.aps.59.1847
2010, 59(3): 1851-1856.
DOI: 10.7498/aps.59.1851
CSTR: 32037.14.aps.59.1851
2010, 59(3): 1857-1862.
DOI: 10.7498/aps.59.1857
CSTR: 32037.14.aps.59.1857
2010, 59(3): 1863-1869.
DOI: 10.7498/aps.59.1863
CSTR: 32037.14.aps.59.1863
2010, 59(3): 1870-1876.
DOI: 10.7498/aps.59.1870
CSTR: 32037.14.aps.59.1870
2010, 59(3): 1877-1883.
DOI: 10.7498/aps.59.1877
CSTR: 32037.14.aps.59.1877
2010, 59(3): 1890-1894.
DOI: 10.7498/aps.59.1890
CSTR: 32037.14.aps.59.1890
2010, 59(3): 1895-1901.
DOI: 10.7498/aps.59.1895
CSTR: 32037.14.aps.59.1895
2010, 59(3): 1902-1906.
DOI: 10.7498/aps.59.1902
CSTR: 32037.14.aps.59.1902
2010, 59(3): 1907-1912.
DOI: 10.7498/aps.59.1907
CSTR: 32037.14.aps.59.1907
2010, 59(3): 1913-1916.
DOI: 10.7498/aps.59.1913
CSTR: 32037.14.aps.59.1913
2010, 59(3): 1917-1922.
DOI: 10.7498/aps.59.1917
CSTR: 32037.14.aps.59.1917
2010, 59(3): 1923-1927.
DOI: 10.7498/aps.59.1923
CSTR: 32037.14.aps.59.1923
2010, 59(3): 1928-1937.
DOI: 10.7498/aps.59.1928
CSTR: 32037.14.aps.59.1928
2010, 59(3): 1938-1945.
DOI: 10.7498/aps.59.1938
CSTR: 32037.14.aps.59.1938
2010, 59(3): 1946-1951.
DOI: 10.7498/aps.59.1946
CSTR: 32037.14.aps.59.1946
2010, 59(3): 1952-1957.
DOI: 10.7498/aps.59.1952
CSTR: 32037.14.aps.59.1952
2010, 59(3): 1964-1969.
DOI: 10.7498/aps.59.1964
CSTR: 32037.14.aps.59.1964
2010, 59(3): 1977-1984.
DOI: 10.7498/aps.59.1977
CSTR: 32037.14.aps.59.1977
2010, 59(3): 1991-1996.
DOI: 10.7498/aps.59.1991
CSTR: 32037.14.aps.59.1991
2010, 59(3): 1997-2003.
DOI: 10.7498/aps.59.1997
CSTR: 32037.14.aps.59.1997
2010, 59(3): 2004-2009.
DOI: 10.7498/aps.59.2004
CSTR: 32037.14.aps.59.2004
2010, 59(3): 2010-2015.
DOI: 10.7498/aps.59.2010
CSTR: 32037.14.aps.59.2010
2010, 59(3): 2016-2021.
DOI: 10.7498/aps.59.2016
CSTR: 32037.14.aps.59.2016
2010, 59(3): 2022-2026.
DOI: 10.7498/aps.59.2022
CSTR: 32037.14.aps.59.2022
First-principles study on the band structure and optical properties of strained Ru2Si3 semiconductor
2010, 59(3): 2027-2032.
DOI: 10.7498/aps.59.2027
CSTR: 32037.14.aps.59.2027
2010, 59(3): 2033-2037.
DOI: 10.7498/aps.59.2033
CSTR: 32037.14.aps.59.2033
2010, 59(3): 2038-2044.
DOI: 10.7498/aps.59.2038
CSTR: 32037.14.aps.59.2038
2010, 59(3): 2045-2050.
DOI: 10.7498/aps.59.2045
CSTR: 32037.14.aps.59.2045
2010, 59(3): 2051-2056.
DOI: 10.7498/aps.59.2051
CSTR: 32037.14.aps.59.2051
2010, 59(3): 2057-2063.
DOI: 10.7498/aps.59.2057
CSTR: 32037.14.aps.59.2057
2010, 59(3): 2064-2067.
DOI: 10.7498/aps.59.2064
CSTR: 32037.14.aps.59.2064
2010, 59(3): 2068-2072.
DOI: 10.7498/aps.59.2068
CSTR: 32037.14.aps.59.2068
2010, 59(3): 2073-2077.
DOI: 10.7498/aps.59.2073
CSTR: 32037.14.aps.59.2073
2010, 59(3): 2078-2084.
DOI: 10.7498/aps.59.2078
CSTR: 32037.14.aps.59.2078
2010, 59(3): 2085-2089.
DOI: 10.7498/aps.59.2085
CSTR: 32037.14.aps.59.2085
2010, 59(3): 2090-2096.
DOI: 10.7498/aps.59.2090
CSTR: 32037.14.aps.59.2090
2010, 59(3): 2097-2103.
DOI: 10.7498/aps.59.2097
CSTR: 32037.14.aps.59.2097
2010, 59(3): 2104-2108.
DOI: 10.7498/aps.59.2104
CSTR: 32037.14.aps.59.2104
2010, 59(3): 2109-2113.
DOI: 10.7498/aps.59.2109
CSTR: 32037.14.aps.59.2109
2010, 59(3): 2114-2119.
DOI: 10.7498/aps.59.2114
CSTR: 32037.14.aps.59.2114
2010, 59(3): 2120-2125.
DOI: 10.7498/aps.59.2120
CSTR: 32037.14.aps.59.2120
2010, 59(3): 2131-2136.
DOI: 10.7498/aps.59.2131
CSTR: 32037.14.aps.59.2131
2010, 59(3): 2137-2146.
DOI: 10.7498/aps.59.2137
CSTR: 32037.14.aps.59.2137
2010, 59(3): 2147-2155.
DOI: 10.7498/aps.59.2147
CSTR: 32037.14.aps.59.2147
2010, 59(3): 2156-2162.
DOI: 10.7498/aps.59.2156
CSTR: 32037.14.aps.59.2156
2010, 59(3): 2163-2168.
DOI: 10.7498/aps.59.2163
CSTR: 32037.14.aps.59.2163
2010, 59(3): 2169-2172.
DOI: 10.7498/aps.59.2169
CSTR: 32037.14.aps.59.2169


