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中国物理学会期刊
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He Bao-Ping, Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environmentJ. Acta Physica Sinica, 2010, 59(3): 1985-1990. DOI: 10.7498/aps.59.1985
Citation: He Bao-Ping, Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environmentJ. Acta Physica Sinica, 2010, 59(3): 1985-1990. DOI: 10.7498/aps.59.1985
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Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment

Acta Phys. Sin., 2010, 59(3): 1985-1990.
DOI: 10.7498/aps.59.1985
CSTR: 32037.14.aps.59.1985
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