The improvement on total ionizing dose （TID） effects of the ultra-deep submicron MOSFET featuring delta doping profiles

Wang Si-Hao; Lu Qing; Wang Wen-Hua; An Xia; Huang Ru

doi:10.7498/aps.59.1970

Search

x

Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru. The improvement on total ionizing dose （TID） effects of the ultra-deep submicron MOSFET featuring delta doping profilesJ. Acta Physica Sinica, 2010, 59(3): 1970-1976. DOI: 10.7498/aps.59.1970

Citation:

Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru. The improvement on total ionizing dose （TID） effects of the ultra-deep submicron MOSFET featuring delta doping profilesJ. Acta Physica Sinica, 2010, 59(3): 1970-1976. DOI: 10.7498/aps.59.1970

Citation:

Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru. The improvement on total ionizing dose （TID） effects of the ultra-deep submicron MOSFET featuring delta doping profilesJ. Acta Physica Sinica, 2010, 59(3): 1970-1976. DOI: 10.7498/aps.59.1970