First-principles study on the band structure and optical properties of strained Ru2Si3 semiconductor

Cui Dong-Meng; Xie Quan; Chen Qian; Zhao Feng-Juan; Li Xu-Zhen

doi:10.7498/aps.59.2027

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Cui Dong-Meng, Xie Quan, Chen Qian, Zhao Feng-Juan, Li Xu-Zhen. First-principles study on the band structure and optical properties of strained Ru2Si3 semiconductorJ. Acta Physica Sinica, 2010, 59(3): 2027-2032. DOI: 10.7498/aps.59.2027

Citation:

Cui Dong-Meng, Xie Quan, Chen Qian, Zhao Feng-Juan, Li Xu-Zhen. First-principles study on the band structure and optical properties of strained Ru2Si3 semiconductorJ. Acta Physica Sinica, 2010, 59(3): 2027-2032. DOI: 10.7498/aps.59.2027

Citation:

Cui Dong-Meng, Xie Quan, Chen Qian, Zhao Feng-Juan, Li Xu-Zhen. First-principles study on the band structure and optical properties of strained Ru2Si3 semiconductorJ. Acta Physica Sinica, 2010, 59(3): 2027-2032. DOI: 10.7498/aps.59.2027