Coupling between magnetism and topology: From fundamental physics to topological magneto-electronics

Liu En-Ke

doi:10.7498/aps.73.20231711

Abstract

Magnetism and topological physics are both well-developed disciplines, and their combination is a demand and foundation for the development of next-generation magneto-electronics. Magnetic topological materials are important products of coupling between magnetic order and topological physics, providing material carrier and regulatory degrees of freedom for novel topological physics. Magnetic Weyl semimetals realize Weyl fermion states under time-reversal symmetry breaking, leading to a host of novel magnetic, electric, thermal, and optical effects through enhanced Berry curvature originating from topology. The interaction between Weyl electrons and magnetic order also establishes topological electronic physics as a new principle and driving force for magneto-electronic applications. At present, the primary task and characteristic of the first development stage of magnetic topological materials is to discover new states and effects, while the understanding of interaction between topologically nontrivial electrons in momentum space and magnetic order in real space has received attention of researchers. The comprehensive advances of these two stages will accumulate the physical foundation and application explorations for topological magneto-electronics. This paper focuses on the two development stages of magnetic topological materials and discusses three aspects: (i) proposal and realization of strategy for magnetic topological materials; (ii) exploration of electronic states with nontrivial topology under uniform magnetic order and their associated novel physical properties; (iii) the interaction between localized magnetic states and topological electrons. It provides an in-depth discussion on current hot topics and development trends in the field, and future development in topological magneto-electronics, thereby assisting in the future development of topological spin quantum devices.

Keywords:

Authors and contacts

Liu En-Ke

State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Science, Beijing 100190, China

Corresponding author: Liu En-Ke, ekliu@iphy.ac.cn

Funds: Project supported by the State Key Development Program for Basic Research of China (Grant Nos. 2022YFA1403800, 2019YFA0704900), the Fundamental Science Center of the National Natural Science Foundation of China (Grant No. 52088101), the National Natural Science Foundation of China (Grant No. 11974394), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences, China (Grant No. XDB33000000), and the Synergetic Extreme Condition User Facility (SECUF) of the Chinese Academy of Sciences, China.

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References

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Cited By

图 1 磁性拓扑材料及其物性自由度

Figure 1. Magnetic topological material and the degrees of freedom of physical properties.

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图 2 基于磁性拓扑物理与材料的丰富物性

Figure 2. Rich effects based on the magnetic topological semimetal.

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图 3 磁性外尔体系中磁畴壁上产生的轴向电磁场 (E₅, B₅)及诱发的霍尔电流j^(H)^[45]

Figure 3. Schematic showing the axial electromagnetic fields (E₅, B₅) and the Weyl-induced Hall current j^(H), along with a Néel domain wall moving with velocity V_DW^[45].

DownLoad: Full-Size Img PowerPoint

图 4 动量空间拓扑电子态与实空间非平庸磁态的耦合与作用

Figure 4. Coupling and interaction between momentum-space topological electronic states and real-space nontrivial magnetic states.

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map

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Vol. 73, Issue 1 - 2024-01-05

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