Crystal growth and electronic transport property of ternary Pd-based tellurides

Qiu Hang-Qiang; Xie Xiao-Meng; Liu Yi; Li Yu-Ke; Xu Xiao-Feng; Jiao Wen-He

doi:10.7498/aps.71.20221034

Abstract

Ternary transition-metal chalcogenides are a series of compounds that possess both low-dimensional structures and correlated electrons, and display rich electronic ground states, depending on their different compositions. Among the chalcogen (S, Se, Te), Te has lower electronegativity and heavier atomic mass than S and Se. Thus, transition-metal tellurides take on distinct crystal structures, electronic structures and physical properties. In recent years, we have successively discovered novel superconductors Ta₄Pd₃Te₁₆ and Ta₃Pd₃Te₁₄, topological Dirac semimetals TaTMTe₅(TM = Pd, Pt, Ni),etc., further expanding the investigations of physical properties of the family of tellurides and laying a foundation for exploring their potential applications . The basis of further investigating and exploring the potential applications is the obtaining of the high-quality crystals with large dimensions. In this work, we first introduce the whole procedures of the single-crystal growth in growing the four ternary Pd-based tellurides (Ta₄Pd₃Te₁₆, Ta₃Pd₃Te₁₄, TaPdTe₅, and Ta₂Pd₃Te₅) by employing the self-flux method and chemical vapor transport method, and then give the chemical reaction equations in chemical vapor transport. The superconducting transition width of the Ta₄Pd₃Te₁₆ crystal and Ta₃Pd₃Te₁₄ crystal are as small as 0.57 K and 0.13 K, respectively, and by fitting the temperature-dependent resistivity of the topological insulator Ta₂Pd₃Te₅, the band gap is derived to be 23.37 meV. Finally, we comparatively analyse the crystal-growth processes of the four ternary Pd-based tellurides by employing the flux method, which can provide the inspiration and reference for growing the crystals of other transition-metal tellurides by employing the similar methods.

Keywords:

Authors and contacts

1.
School of Science, Zhejiang University of Science and Technology, Hangzhou 310023, China
2.
Key Laboratory of Quantum Precision Measurement of Zhejiang Province, School of Science, Zhejiang University of Technology, Hangzhou 310023, China
3.
School of Physics, Hangzhou Normal University, Hangzhou 311121, China

Corresponding author: Jiao Wen-He, whjiao@zjut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11974061, U1932155) and the Natural Science Foundation of Zhejiang Province, China (Grant No. LY19A040002).

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References

[1]	Revolinsky E, Spiering G A, Beerntsen D J 1965 J. Phys. Chem. Solids 26 1029 Google Scholar
[2]	Gamble F R, DiSalvo F J, Klemm R A, Geballe T H 1970 Science 168 568 Google Scholar
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[40]	Brown B E 1966 Acta Crystallogr. 20 264 Google Scholar

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图 1 晶体生长法略图和生长出的单晶照片　(a)助熔剂法; (b)化学气相输运法; (c) Ta₄Pd₃Te₁₆; (d) Ta₃Pd₃Te₁₄; (e) TaPdTe₅; (f) Ta₂Pd₃Te₅

Figure 1. Schematic diagrams of the employed methods of crystal growth and the photographs of the as-grown crystals: (a) Flux method; (b)CVT method; (c) Ta₄Pd₃Te₁₆; (d) Ta₃Pd₃Te₁₄; (e) TaPdTe₅; (f) Ta₂Pd₃Te₅.

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图 2 (a)三元钯基碲化物单晶的X射线衍射图谱; (b)沿链方向的单个原子层投影图

Figure 2. (a) XRD patterns and (b)projection view of one atomic layers of the corresponding ternary Pd-based tellurides.

DownLoad: Full-Size Img PowerPoint

图 3 三元钯基碲化物晶体沿链方向的电阻率-温度关系图　(a) Ta₄Pd₃Te₁₆; (b) Ta₃Pd₃Te₁₄; (c) TaPdTe₅; (d) Ta₂Pd₃Te₅

Figure 3. Temperature dependence of the electronic resistivity along the chain direction for ternary Pd-based tellurides: (a) Ta₄Pd₃Te₁₆; (b) Ta₃Pd₃Te₁₄; (c) TaPdTe₅; (d) Ta₂Pd₃Te₅.

DownLoad: Full-Size Img PowerPoint

图 4 自助熔剂法生长三元钯基碲化物单晶的(a)配料摩尔比和(b)温度设定程序

Figure 4. (a) The Molar ratio and (b) temperature setting procedures employed in growing the single crystals of ternary Pd-based tellurides by self-flux method.

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图 5 以摩尔比Ta∶Pd∶Te = 2∶4.5∶7.5配料和图4(b)红线所示温度程序运行后晶体的EDS谱图, 插图为显微镜下的晶体照片

Figure 5. EDS spectrum of the single crystal grown with nominal molar ratio Ta∶Pd∶Te = 2∶4.5∶7.5 and heating procedure as shown by the red line plotted in Fig. 4(b). The inset shows the photograph of the as-grown crystals.

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表 1 四种单晶样品的元素组成

Table 1. Element composition of the four kinds of single crystals.

Sample	Ta content/%	Pd content/%	Te content/%
Ta₄Pd₃Te₁₆	16.40	11.97	71.63
Ta₃Pd₃Te₁₄	14.29	13.67	72.04
TaPdTe₅	12.52	12.17	75.31
Ta₂Pd₃Te₅	19.57	31.51	48.92

DownLoad: CSV

表 2 三元Pd基碲化物的晶体参数

Table 2. Crystal parameters of ternary Pd-based tellurides.

Compound	Space group	a/Å	b/Å	c/Å	β/(°)	IS/Å (Calculated)	IS/Å (XRD)	Ref.
Ta₄Pd₃Te₁₆	I2/m	17.687(4)	3.735(1)	19.510(4)	110.42(1)	6.503(5)	6.529(6)	[29]
Ta₃Pd₃Te₁₄	P21/m	14.088(2)	3.737(3)	20.560(2)	103.73(5)	6.397(1)	6.418(8)	[30]
TaPdTe₅	Cmcm	3.693(4)	13.274(0)	15.602(0)	—	6.637(0)	6.629(8)	[24]
Ta₂Pd₃Te₅	Cmcm	13.989(3)	3.713(1)	18.630(4)	—	6.994(7)	6.975(9)	[31]

DownLoad: CSV

map

[1]	Revolinsky E, Spiering G A, Beerntsen D J 1965 J. Phys. Chem. Solids 26 1029 Google Scholar
[2]	Gamble F R, DiSalvo F J, Klemm R A, Geballe T H 1970 Science 168 568 Google Scholar
[3]	Morris R C, Coleman R V, Bhandari R 1972 Phys. Rev. B 5 895 Google Scholar
[4]	Guillamón I, Suderow H, Rodrigo J G, Vieira S, Rodiere P, Cario L, Navarro-Moratalla E, Martí-Gastaldo C, Coronado E 2011 New J. Phys. 13 103020 Google Scholar
[5]	Moncton D E, Axe J D, DiSalvo F J 1975 Phys. Rev. Lett. 34 734 Google Scholar
[6]	Wilson J A, Di Salvo F J, Mahajan S 1974 Phys. Rev. Lett. 32 882 Google Scholar
[7]	Ali M N, Xiong J, Flynn S, Tao J, Gibson Q D, Schoop L M, Liang T, Haldolaarachchige N, Hirschberger M, Ong N P, Cava R J 2014 Nature 514 205 Google Scholar
[8]	Li P, Wen Y, He X, Zhang Q, Xia C, Yu Z M, Yang S A, Zhu Z, Alshareef H N, Zhang X X 2017 Nat. Commun. 8 1 Google Scholar
[9]	Deng K, Wan G L, Deng P, et al. 2016 Nat. Phys. 12 1105 Google Scholar
[10]	Freitas D C, Rodière P, Osorio M R, et al. 2016 Phys. Rev. B 93 184512 Google Scholar
[11]	Malliakas C D, Kanatzidis M G 2013 J. Am. Chem. Soc. 135 1719 Google Scholar
[12]	Soluyanov A A, Gresch D, Wang Z J, Wu Q S, Troyer M, Dai X, Bernevig B A 2015 Nature 527 495 Google Scholar
[13]	Wu S F, Fatemi V, Gibson Q D, Watanabe K, Taniguchi T, Cava R J, Jarillo-Herrero P 2018 Science 359 76 Google Scholar
[14]	Pell M A, Ibers J A 1997 Chem. Ber. 130 1 Google Scholar
[15]	Mitchell K, Ibers J A 2002 Chem. Rev. 102 1929 Google Scholar
[16]	Zhang Q, Li G, Rhodes D, Kiswandhi A, Besara T, Zeng B, Sun J, Siegrist T, Johannes M D, Balicas L 2013 Sci. Rep. 3 1 Google Scholar
[17]	Lu Y F, Takayama T, Bangura A F, Katsura Y, Hashizume D, Takagi H 2014 J. Phys. Soc. Jpn. 83 023702 Google Scholar
[18]	Khim S, Lee B, Choi K Y, Jeon B G, Jang D H, Patil D, Patil S, Kim R, Choi E S, Lee S, Yu J, Kim K H 2013 New J. Phys. 15 123031 Google Scholar
[19]	Niu C Q, Yang J H, Li Y K, Chen B, Zhou N, Chen J, Jiang L L, Chen B, Yang X X, Cao C, Dai J H, Xu X F 2013 Phys. Rev. B 88 104507 Google Scholar
[20]	Zhang Q R, Rhodes D, Zeng B, Besara T, Siegrist T, Johannes M D, Balicas L 2013 Phys. Rev. B 88 024508 Google Scholar
[21]	Yu H Y, Zuo M, Zhang L, Tan S, Zhang C J, Zhang Y H 2013 J. Am. Chem. Soc. 135 12987 Google Scholar
[22]	Jiao W H, Tang Z T, Sun Y L, Liu Y, Tao Q, Feng C M, Zeng Y W, Xu Z A, Cao G H 2014 J. Am. Chem. Soc. 136 1284 Google Scholar
[23]	Jiao W H, He L P, Liu Y, Xu X F, Li Y K, Zhang C H, Zhou N, Xu Z A, Li S Y, Cao G H 2016 Sci. Rep. 6 1 Google Scholar
[24]	Jiao W H, Xie X M, Liu Y, Xu X F, Li B, Xu C Q, Liu J Y, Zhou W, Li Y K, Yang H Y, Jiang S, Luo Y K, Zhu Z W, Cao G H 2020 Phys. Rev. B 102 075141 Google Scholar
[25]	Jiao W H, Xiao S Z, Li B, Xu C Q, Xie X M, Qiu H Q, Xu X F, Liu Y, Song S J, Zhou W, Zhai H F, Ke X, He S L, Cao G H 2021 Phys. Rev. B 103 125150 Google Scholar
[26]	Xu C Q, Liu Y, Cai P G, Li B, Jiao W H, Li Y L, Zhang J Y, Zhou W, Qian B, Jiang X F, Shi Z X, Sankar R, Zhang J L, Yang F, Zhu Z W, Biswas P, Qian D, Ke X L, Xu X F 2020 The J. Phys. Chem. Lett. 11 7782 Google Scholar
[27]	Elwell D, Scheel H J, Kaldis E 1976 J. Electrochem. Soc. 123 319C Google Scholar
[28]	Binnewies M, Glaum R, Schmidt M, Schmidt P 2013 Z. Anorg. All. Chem. 639 219 Google Scholar
[29]	Mar A, Ibers J A 1991 J. Chem. Soc. Dalton Trans. 639
[30]	Liimatta E W, Ibers J A 1989 J. Solid State Chem. 78 7
[31]	Tremel W 1993 Angew. Chem. Int. Ed. 32 1752
[32]	Zhao X M, Zhang K, Cao Z Y, Zhao Z W, Struzhkin V V, Goncharov A F, Wang H K, Gavriliuk A G, Mao H K, Chen X J 2020 Phys. Rev. B 101 134506 Google Scholar
[33]	Wang X G, Geng D Y, Yan D Y, et al. 2021 Phys. Rev. B 104 L241408 Google Scholar
[34]	Higashihara N, Okamoto Y, Yoshikawa Y, Yamakawa Y, Takatsu H, Kageyama H, Takenaka K 2021 J. Phys. Soc. Jpn. 90 063705 Google Scholar
[35]	Shahi P, Singh D J, Sun J P, Zhao L X, Chen G F, Lv Y Y, Li J, Yan J Q, Mandrus D G, Cheng J G 2018 Phys. Rev. X 8 021055 Google Scholar
[36]	Kumar N, Guin S N, Manna K, Shekhar C, Felser C 2021 Chem. Rev. 121 2780 Google Scholar
[37]	Yoo Y, DeGregorio Z P, Su Y, Koester S J, Johns J E 2017 Adv. Mater. 29 1605461 Google Scholar
[38]	Cho S, Kim S, Kim J H, Zhao J, Seok J, Keum D H, Baik J, Choe D H, Chang K J, Suenaga K, Kim S W, Lee Y H, Yang H 2015 Science 349 625 Google Scholar
[39]	Kim H, Johns J E, Yoo Y 2020 Small 16 2002849 Google Scholar
[40]	Brown B E 1966 Acta Crystallogr. 20 264 Google Scholar

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