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(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 materials near the morphotropic phase boundary are selected for tentative electron emission experiments due to their excellent piezoelectric and ferroelectric properties and relatively high dielectric constants. The influences of ferroelectric and dielectric properties of ferroelectric cathode material on its threshold voltage are studied. The relationship between emission current and triggering voltage is investigated, and the relationship between emission current and extracting voltage is studied as well. The electron emission mechanism is also analyzed. The results show that emission threshold voltage of the relaxation ferroelectric 0.9Pb(Mg1/3Nb2/3) O3-0.1PbTiO3 is smaller due to its high dielectric constant at room temperature and large polarization variation. Low threshold voltage means low power consumption. This is an important factor to be considered in actual application for ferroelectric cathode and it has an important reference value. Electron emission is associated with fast polarization reversal and the formation of the plasma. The self-emission current starts on the falling edge of the triggering voltage pulse, which means that it is caused by polarization reversal. The amplitude of the self-emission current grows exponentially with the increase of triggering voltage. The amplitude of emission current shows a linear growth with the increase of extracting voltage when it is larger. It indicates that large current is determined mainly by extracting voltage. Larger current needs larger extracting voltage. The emission current starts on the rising edge of the triggering voltage pulse. It is associated with the field enhancement effect near “three interface points” and the formation of the plasma. An emission current of 210 A is obtained from the ferroelectric cathode under an extracting voltage of 2500 V, and the corresponding current density is 447 A/cm2.
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Keywords:
- Pb(Mg1/3Nb2/3)O3-PbTiO3 /
- ferroelectric cathode /
- electron emission
[1] Gundel H, Riege H, Handerek J, Zioutas K 1989 Appl. Phys. Lett. 54 2071
[2] Rosenman G, Shur D, Krasik Y E, Dunaevsky A 2000 J. Appl. Phys. 88 6109
[3] Krasik Y E, Dunaevsky A, Krokhmal A, Felsteiner J, Gunin A V, Pegel I V, Korovin S D 2001 J. Appl. Phys. 89 2379
[4] Sheng Z X, Feng Y J, Huang X, Xu Z, Sun X L 2008 Acta Phys. Sin. 57 4590 (in Chinese) [盛兆玄, 冯玉军, 黄璇, 徐卓, 孙新利 2008 57 4590]
[5] Gundel H, Hafiderek J, Riege H 1991 Appl. Phys. 69 975
[6] Chen S T, Zheng S X, Zhu Z Q, Dong X L, Tang C X 2006 Nucl. Instr. Meth. Phys. Res. A 566 662
[7] Gundel H, Riege H, Wilson E J N, Zioutas K 1989 Ferroelectrics 100 1
[8] Rosenblum B, Braunlich P, Carrico J P 1974 Appl. Phys. Lett. 25 17
[9] Rosenman G, Pechorskii V J E 1980 Sov. Tech. Phys. Lett. 6 661
[10] Rozenman G I, Okhapkin V A, Chepelev Y L, Shur V Ya 1984 JETP Lett. 39 477
[11] Ivers J D, Schachter L, Nation J A, Kerslick S, Advani R 1993 J. Appl. Phys. 73 2667
[12] Zhang W M, Huebne W 1998 J. Appl. Phy. 83 6034
[13] Hayashi Ya, Flechtner D, Hotta E 2002 J. Phys. D: Appl. Phys. 35 281
[14] Gundel H, Riege H, Wilson E J N, Handerek J, Zioutas K 1989 Nucl. Instrum. Methods Phys. Res. A 280 1
[15] Dunaevsky A, Fisch N J 2004 J. Appl. Phys. 95 4621
[16] Chen S T, Dong X L, Zheng S X, Zhu Z Q, Tang C X 2007 Ceram. Int. 33 1155
[17] Huang X D, Feng Y J, Tang S 2012 Acta Phys. Sin. 61 087702 (in Chinese) [黄旭东, 冯玉军, 唐帅 2012 61 087702]
[18] Liu Y, Louc X J, Xu Z, Heb H L, FengY J 2014 Ceram. Int. 40 11057
[19] Park S E, Shrout T R 1997 J. Appl. Phys. 82 1804
[20] Service R E 1997 Science 275 1878
[21] Huang X, Feng Y J, Cui J, Sheng Z X 2009 J. Phys. 152 012045
[22] Stadler H L, Zachmanids P L 1963 J. Appl. Phys. 34 3255
[23] Sheng Z X 2008 Ph D. Dissertation (Xi'an: The second Artillery Engineering Institute) (in Chinese) [盛兆玄 2008 博士学位论文 (西安: 第二炮兵工程学院)]
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[1] Gundel H, Riege H, Handerek J, Zioutas K 1989 Appl. Phys. Lett. 54 2071
[2] Rosenman G, Shur D, Krasik Y E, Dunaevsky A 2000 J. Appl. Phys. 88 6109
[3] Krasik Y E, Dunaevsky A, Krokhmal A, Felsteiner J, Gunin A V, Pegel I V, Korovin S D 2001 J. Appl. Phys. 89 2379
[4] Sheng Z X, Feng Y J, Huang X, Xu Z, Sun X L 2008 Acta Phys. Sin. 57 4590 (in Chinese) [盛兆玄, 冯玉军, 黄璇, 徐卓, 孙新利 2008 57 4590]
[5] Gundel H, Hafiderek J, Riege H 1991 Appl. Phys. 69 975
[6] Chen S T, Zheng S X, Zhu Z Q, Dong X L, Tang C X 2006 Nucl. Instr. Meth. Phys. Res. A 566 662
[7] Gundel H, Riege H, Wilson E J N, Zioutas K 1989 Ferroelectrics 100 1
[8] Rosenblum B, Braunlich P, Carrico J P 1974 Appl. Phys. Lett. 25 17
[9] Rosenman G, Pechorskii V J E 1980 Sov. Tech. Phys. Lett. 6 661
[10] Rozenman G I, Okhapkin V A, Chepelev Y L, Shur V Ya 1984 JETP Lett. 39 477
[11] Ivers J D, Schachter L, Nation J A, Kerslick S, Advani R 1993 J. Appl. Phys. 73 2667
[12] Zhang W M, Huebne W 1998 J. Appl. Phy. 83 6034
[13] Hayashi Ya, Flechtner D, Hotta E 2002 J. Phys. D: Appl. Phys. 35 281
[14] Gundel H, Riege H, Wilson E J N, Handerek J, Zioutas K 1989 Nucl. Instrum. Methods Phys. Res. A 280 1
[15] Dunaevsky A, Fisch N J 2004 J. Appl. Phys. 95 4621
[16] Chen S T, Dong X L, Zheng S X, Zhu Z Q, Tang C X 2007 Ceram. Int. 33 1155
[17] Huang X D, Feng Y J, Tang S 2012 Acta Phys. Sin. 61 087702 (in Chinese) [黄旭东, 冯玉军, 唐帅 2012 61 087702]
[18] Liu Y, Louc X J, Xu Z, Heb H L, FengY J 2014 Ceram. Int. 40 11057
[19] Park S E, Shrout T R 1997 J. Appl. Phys. 82 1804
[20] Service R E 1997 Science 275 1878
[21] Huang X, Feng Y J, Cui J, Sheng Z X 2009 J. Phys. 152 012045
[22] Stadler H L, Zachmanids P L 1963 J. Appl. Phys. 34 3255
[23] Sheng Z X 2008 Ph D. Dissertation (Xi'an: The second Artillery Engineering Institute) (in Chinese) [盛兆玄 2008 博士学位论文 (西安: 第二炮兵工程学院)]
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