Experimental study on laser produced tin droplet plasma extreme ultraviolet light source

Chen Hong; Lan Hui; Chen Zi-Qi; Liu Lu-Ning; Wu Tao; Zuo Du-Luo; Lu Pei-Xiang; Wang Xin-Bing

doi:10.7498/aps.64.075202

Abstract

Extreme ultraviolet lithography (EUVL), which uses the extreme ultraviolet radiation at a wavelength of 13.5 nm, is the leading candidate of next generation lithography addressing not only the 10 nm half-pitch nodes, but several nodes beyond that. Among all the methods for getting EUV radiation, laser-produced plasma (LPP) light source is the most promising EUV light source because of its high conversion efficiency (CE), large collect angle and low debris output. In this paper, pulsed TEA-CO2 laser and Nd:YAG laser are used to irradiate tin droplets to obtain plasma EUV emission, and the properties of EUV radiation from the plasma are studied. Results show that the EUV emission spectra induced by Nd:YAG laser have an obvious blueshift as compared with those by CO2 laser. In addition, the LPP sources are point light sources, so that the angular distribution of EUV emission from LPP can be described by Lambertian distribution.

Keywords:

Authors and contacts

1.
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2.
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
3.
School of Science, Wuhan Institute of Technology, Wuhan 430073, China
Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11304235).

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[10]	Zhao Y P, Xu Q, Xiao D L, Ding N, Xie Y, Li Q, Wang Q 2013 Acta Phys. Sin. 62 245204 (in Chinese) [赵永蓬, 徐强, 肖德龙, 丁宁, 谢耀, 李琦, 王骐 2013 62 245204]
[11]	Dou Y P, Sun C K, Liu C Z, Gao J, Hao Z Q, Lin J Q 2014 Chin. Phys. B 23 075202
[12]	Wang H C, Wang Z S, Li F S, Qin S J, Du Y, Wang L, Zhang Z, Chen L Y 2004 Acta Phys. Sin. 53 2368 (in Chinese) [王洪昌, 王占山, 李佛生, 秦树基, 杜芸, 王利, 张众, 陈玲燕 2004 53 2368]
[13]	Wu T, Wang X B, Wang S Y, Tang J, Lu P X, Lu H 2012 Journal of Applied Physics 111 063304
[14]	Wu T, Wang X B, Tang J, Rao Z M, Wang S Y 2011 Laser Technology 35 800 (in Chinese) [吴涛, 王新兵, 唐建, 饶志明, 王少义 2011 激光技术 35 800]
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Cited By

[1]	Bakshi V 2009 EUV lithography (Bellingham: Spie Press) pp104
[2]	Brandt D C, Fomenkov I V, Farrar N R, Fontaine B L, Myers D W, Brown D J, Ershov A I, Böwering N R, Riggs D J, Rafac R J, Dea S D, Peeters R, Meiling H, Harned N, Smith D, Pirati A, Kazinczi R 2014 Extreme Ultraviolet (EUV) Lithography V90480C San Jose, California, United States, February 23-27 2014
[3]	Mizoguchi H, Nakarai H, Abe T, Ohta T, Nowak K M, Kawasuji Y, Tanaka H, Watanabe Y, Hori T, Kodama T, Shiraishi Y, Yanagida T, Yamada T, Yamazaki T, Okazaki S, Saitou T 2014 Extreme Ultraviolet (EUV) Lithography V 90480D San Jose, California, United States, February 23-27 2014
[4]	Abhari R S, Rollinger B, Giovannini A Z, Morris O, Henderson I, Ellwi S S 2012 Journal of MicroNanolithography, MEMS, MOEMS 11 021114
[5]	Giovannini A Z, Abhari R S 2013 Journal of Applied Physics 114 033303
[6]	Masnavi M, Szilagyi J, Parchamy H, Richardson M C 2013 Applied Physics Letters 102 164102
[7]	Ni Q L 2003 Ph. D. Dissertation (Changchun: University of Chinese Academy of Sciences) (in Chinese) [尼启良 2003 博士学位论文 (长春: 中国科学院研究生院, 长春光学精密机械与物理研究所)]
[8]	Jin C S, Wang Z S, Cao J L 2000 Optics and Precision Engineering 8 66 (in Chinese) [金春水, 王占山, 曹健林 2000 光学精密工程 8 66]
[9]	Cai Y, Wang W T, Yang M, Liu H S, Lu P X, Li R X, Xu Z Z 2008 Acta Phys. Sin. 57 5100 (in Chinese) [蔡懿, 王文涛, 杨明, 刘建胜, 陆培祥, 李儒新, 徐至展 2008 57 5100]
[10]	Zhao Y P, Xu Q, Xiao D L, Ding N, Xie Y, Li Q, Wang Q 2013 Acta Phys. Sin. 62 245204 (in Chinese) [赵永蓬, 徐强, 肖德龙, 丁宁, 谢耀, 李琦, 王骐 2013 62 245204]
[11]	Dou Y P, Sun C K, Liu C Z, Gao J, Hao Z Q, Lin J Q 2014 Chin. Phys. B 23 075202
[12]	Wang H C, Wang Z S, Li F S, Qin S J, Du Y, Wang L, Zhang Z, Chen L Y 2004 Acta Phys. Sin. 53 2368 (in Chinese) [王洪昌, 王占山, 李佛生, 秦树基, 杜芸, 王利, 张众, 陈玲燕 2004 53 2368]
[13]	Wu T, Wang X B, Wang S Y, Tang J, Lu P X, Lu H 2012 Journal of Applied Physics 111 063304
[14]	Wu T, Wang X B, Tang J, Rao Z M, Wang S Y 2011 Laser Technology 35 800 (in Chinese) [吴涛, 王新兵, 唐建, 饶志明, 王少义 2011 激光技术 35 800]
[15]	Wu H Y, Wu Y G, Wang Z H, Lu G, Ling L J, Xia Z H, Chen N B 2011 Acta Photonica Sinica 40 0001 (in Chinese) [伍和云, 吴永刚, 王振华, 吕刚, 凌磊婕, 夏子奂, 陈乃波 2011 光子学报 40 0001]
[16]	Bob R, Luna B, Nadia G, Abhari R S 2012 Extreme Ultraviolet Lithography III 83222P San Jose, California United States, February 12 2012
[17]	Wang J L, Chen W W, Cai L, Ma Y R, Liu Y S, Lv G S, Shao M J, Jin Y Q, Sang F T 2006 High Power Laser and Particle Beams 18 935 (in Chinese) [王景龙, 陈文武, 蔡龙, 马月仁, 刘宇时, 吕国盛, 邵明君, 金玉奇, 桑凤亭 2006 强激光与粒子束 18 935]
[18]	Cui Y Q, Wang W M, Sheng Z M, Li Y T, Zhang J 2013 Plasma Physics and Controlled Fusion 55 085008
[19]	Bakshi V 2006 EUV Sources for Lithography (Bellingham, WA: Spie Press) p113

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Vol. 64, Issue 7 - 2015-04-05

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