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SiNx films are synthesized on Si substrates in a home-made linear microwave plasma enhanced chemical vapor deposition system at different microwave powers, duty cycles, substrate temperatures, and ratios of silane (SiH4) flow to ammonia (NH3) gas flow. The effects of technological parameters on morphology of film surface, stoichiometric proportion, refractive index and deposition rate of SiNx film are characterized by scanning electron microscopy (SEM) and elliptical polarization instrument, and the relationships among stoichiometric proportion, refractive index and deposition rate are investigated. The results from SEM analysis indicate that the surfaces are smooth and the elements are homogeneously distributed in the films obtained under different deposition parameters. The ratio of SiH4 flow to NH3 gas flow and the duty cycle are the most critical factors determining the refractive index which can be changed from 1.92 to 2.33. The thickness measurements show that the deposition rate of SiNx film is affected by microwave power, duty cycle, substrate temperature and flow ratio. The maximum deposition rate achieved in the paper is 135 nm·min-1.
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Keywords:
- SiNx thin film /
- linear microwave chemical vapor deposition /
- refractivity /
- deposition rate
[1] Akira H, Toshiharu M, Toshikazu N, Shigehira M, Atsushi M, Hironobu U, Naoto M, Hideki M 2008 Thin Solid Films 516 3000
[2] Swatowska B, Stapinski T 2008 Vacuum 82 942
[3] Skordas S, Sirinakis G, Yu W, Wu D, Efstathiadis H, Kaloyeros A E 2000 Mater. Res. Soc. Symp. Proc. 109 606
[4] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Acta Phys. Sin. 58 4109 (in Chinese) [丁万昱, 徐军, 陆文琪, 邓新绿, 董闯 2009 58 4109]
[5] Habermehl S 1998 J. Appl. Phys. 83 4672
[6] Ding W Y, Xu J, Piao Y, Li Y Q, Gao P, Deng X L, Dong C 2005 Chin. Phys. Lett. 22 2332
[7] Yohei O, Keisuke O, Takuya O, Hideki M 2008 Thin Solid Films 516 611
[8] Kang S M, Yoon S G, Yoon D H 2008 Thin Solid Films 516 1405
[9] Vargheese K D, Rao G M 2001 J. Vac. Sci. Technol. A 19 1336
[10] Xu D, Zhu H, Yang L J, Yang Y J, Zheng Z H, Liu X H, Taniguchis, Shibatat 1995 Acta Metal. Sin. 31 164 (in Chinese) [徐东, 朱宏, 杨丽娟, 杨云洁, 郑志宏, 柳襄怀,谷口滋次,柴田俊夫 1995 金属学报 31 164]
[11] Chen J F, Wu X Q, Wang D Q, Ding Z F, Ren Z X 1999 Acta Phys. Sin. 48 1309 (in Chinese) [陈俊芳, 吴先秋, 王德求, 丁振峰, 任兆杏 1999 48 1309]
[12] Yota J, Hander J, Saleh A A 2000 J. Vac. Sci. Technol. A 18 372
[13] Ji A L, Ma L B, Liu W, Wang Y Q 2004 Acta Phys. Sin. 53 3818 (in Chinese) [纪爱玲, 马利波, 刘薇, 王永谦 2004 53 3818]
[14] Yu W, Li Y C, Ding W G, Zhang J Y, Yang Y B, Fu G S 2008 Acta Phys. Sin. 57 3661 (in Chinese) [于威, 李亚超, 丁文革, 张江用, 杨彦斌, 傅广生 2008 57 3661]
[15] Zaghloul U, Papaioannou G J, Wang H, Bhushan B, Coccetti F, Pons P 2011 Nanotechology 22 205708
[16] Keita A S, Naciri A E, Delachat F, Carrada M, Ferblantier G, Slaoui A, Stchakovsky M 2011 Thin Solid Films 519 2870
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[1] Akira H, Toshiharu M, Toshikazu N, Shigehira M, Atsushi M, Hironobu U, Naoto M, Hideki M 2008 Thin Solid Films 516 3000
[2] Swatowska B, Stapinski T 2008 Vacuum 82 942
[3] Skordas S, Sirinakis G, Yu W, Wu D, Efstathiadis H, Kaloyeros A E 2000 Mater. Res. Soc. Symp. Proc. 109 606
[4] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Acta Phys. Sin. 58 4109 (in Chinese) [丁万昱, 徐军, 陆文琪, 邓新绿, 董闯 2009 58 4109]
[5] Habermehl S 1998 J. Appl. Phys. 83 4672
[6] Ding W Y, Xu J, Piao Y, Li Y Q, Gao P, Deng X L, Dong C 2005 Chin. Phys. Lett. 22 2332
[7] Yohei O, Keisuke O, Takuya O, Hideki M 2008 Thin Solid Films 516 611
[8] Kang S M, Yoon S G, Yoon D H 2008 Thin Solid Films 516 1405
[9] Vargheese K D, Rao G M 2001 J. Vac. Sci. Technol. A 19 1336
[10] Xu D, Zhu H, Yang L J, Yang Y J, Zheng Z H, Liu X H, Taniguchis, Shibatat 1995 Acta Metal. Sin. 31 164 (in Chinese) [徐东, 朱宏, 杨丽娟, 杨云洁, 郑志宏, 柳襄怀,谷口滋次,柴田俊夫 1995 金属学报 31 164]
[11] Chen J F, Wu X Q, Wang D Q, Ding Z F, Ren Z X 1999 Acta Phys. Sin. 48 1309 (in Chinese) [陈俊芳, 吴先秋, 王德求, 丁振峰, 任兆杏 1999 48 1309]
[12] Yota J, Hander J, Saleh A A 2000 J. Vac. Sci. Technol. A 18 372
[13] Ji A L, Ma L B, Liu W, Wang Y Q 2004 Acta Phys. Sin. 53 3818 (in Chinese) [纪爱玲, 马利波, 刘薇, 王永谦 2004 53 3818]
[14] Yu W, Li Y C, Ding W G, Zhang J Y, Yang Y B, Fu G S 2008 Acta Phys. Sin. 57 3661 (in Chinese) [于威, 李亚超, 丁文革, 张江用, 杨彦斌, 傅广生 2008 57 3661]
[15] Zaghloul U, Papaioannou G J, Wang H, Bhushan B, Coccetti F, Pons P 2011 Nanotechology 22 205708
[16] Keita A S, Naciri A E, Delachat F, Carrada M, Ferblantier G, Slaoui A, Stchakovsky M 2011 Thin Solid Films 519 2870
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