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在基底与靶材之间放置磁性强弱不同的永久磁铁来研究外加磁 场对磁控溅射制备氮化硅陷光薄膜的影响. 通过X射线衍射、原子力显微镜 (AFM) 以及紫外分光光度计分别测试了外加磁场前后所制备薄膜的组织结构、表面形貌和光学性能. 结果表明, 外加磁场后, 氮化硅薄膜依然呈现非晶结构; 但是表面形貌发生明显改变, 中心磁场1.50 T下, 薄膜表面为特殊锥状尖峰结构类金字塔的突起, 而且这些突起颗粒垂直于基底表面; 在 可见光及近红外范围内, 中心磁场1.50 T 下的薄膜样品平均透射率最大, 平均透射率达到90% 以上, 比未加磁场的样品提高了近1 倍, 具有很好的陷光特性.In the applied magnetic field different magnetic intensities in the permanent magnet were introduced between the substrate and target, so as to study their influence on the properties of silicon thin films with light trapping structure prepared by R.F. magnetron sputtering. The microstructures, surface morphology and optical properties of the films were characterized by X-ray diffraction, atomic force microscope (AFM) and ultraviolet spectrophotometer separately. Results show that the silicon nitride thin films are still in amorphous state although an magnetic field was applied on them; however, when the magnetic field in the center is of 1.5 T, the surface morphology of the films has dramatically changed to a special peak structure, i.e. pyramid-like protuberances which are perpendicular to the basal surface; meanwhile, in the visible and near infrared range, the average transmittance of the sample is the highest, which is more than 90%, nearly twice as much as the transmittance of the sample without applied magnetic field, thus the light trapping effect is the great.
[1] Bao J Y, Guo Z Y, Xi X X, Jeffrey Y, Subhendu G 2010 Phys. Status solidi. A 207 671
[2] Jia S L, Zhang W J, Liu H, Zhang X Q, Guo W, Wu J 2009 Electronic Components and Materials 28 32 (in Chinese) [贾士亮, 张维佳, 刘浩, 张心强, 郭卫, 吴倞 2009 电子元件与材料 28 32]
[3] Kuo M L, Poxson D J, Kim Y S 2008 Opt. Lett. 33 2527
[4] Solanki C S, Bilyalov R R, Poortmans J 2004 Electrochem. Soc. 151 307
[5] Wu Z G, Zhang W W, Bai L F, Wang J, Yan P X 2005 Acta Phys. Sin. 54 1687 (in Chinese) [吴志国, 张伟伟, 白利峰, 王君, 闫鹏勋 2005 54 1687]
[6] Zhang D H, Wang Q P, Xue Z Y 2003 Acta Phys. Sin. 52 1484 (in Chinese) [张德恒, 王卿璞, 薛忠营 2003 52 1484 ]
[7] Liu H X, Wei H L, Liu Y H, Liu Z L 2001 Function Mater. 32 603 (in Chinese) [刘洪祥, 魏合林, 刘艳红, 刘祖黎 2001 功能材料 32 603]
[8] Tahashi M, Sassa K, Asai S 2002 Materials Transactions 43 2813
[9] Kessels W M M, Hong J, Van Assche F J H 2002 American Vacuum Society 20 1704
[10] Yu W, Liu L H, Hou H H, Ding X C, Han L, Fu G S 2003 Acta Phys. Sin. 52 0687 (in Chinese) [于威, 刘丽辉, 侯海虹, 丁学成, 韩理, 傅广生 2003 52 0687]
[11] Zhao X M, Di G Q 2004 Acta Phys. Sin. 53 0306 (in Chinese) [赵新民, 狄国庆 2004 53 0306]
[12] Ma T C, Hu X W, Chen Y H 1988 Plasma physics principle (Hefei: University of Science and Technology of China Press) P100 (in Chinese) [马腾才, 胡希伟, 陈银华 1988 等离子体物理原理 (合肥: 中国科技大学出版社) 第100页]
[13] Zhu Y, Di G Q, Zhao D T 2001 Journal of Functional Materials and Devices 7 0384 (in Chinese) [朱炎, 狄国庆, 赵登涛 2001 功能材料与器件学报 7 0384]
[14] Cao Y L 2011 M.S. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [曹英丽 2011 硕士学位论文 (大连: 大连理工大学)]
[15] Hua X S, Zhang Y J, Wang H W 2009 Solar Energy Materials and Solar Cells 10 27
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[1] Bao J Y, Guo Z Y, Xi X X, Jeffrey Y, Subhendu G 2010 Phys. Status solidi. A 207 671
[2] Jia S L, Zhang W J, Liu H, Zhang X Q, Guo W, Wu J 2009 Electronic Components and Materials 28 32 (in Chinese) [贾士亮, 张维佳, 刘浩, 张心强, 郭卫, 吴倞 2009 电子元件与材料 28 32]
[3] Kuo M L, Poxson D J, Kim Y S 2008 Opt. Lett. 33 2527
[4] Solanki C S, Bilyalov R R, Poortmans J 2004 Electrochem. Soc. 151 307
[5] Wu Z G, Zhang W W, Bai L F, Wang J, Yan P X 2005 Acta Phys. Sin. 54 1687 (in Chinese) [吴志国, 张伟伟, 白利峰, 王君, 闫鹏勋 2005 54 1687]
[6] Zhang D H, Wang Q P, Xue Z Y 2003 Acta Phys. Sin. 52 1484 (in Chinese) [张德恒, 王卿璞, 薛忠营 2003 52 1484 ]
[7] Liu H X, Wei H L, Liu Y H, Liu Z L 2001 Function Mater. 32 603 (in Chinese) [刘洪祥, 魏合林, 刘艳红, 刘祖黎 2001 功能材料 32 603]
[8] Tahashi M, Sassa K, Asai S 2002 Materials Transactions 43 2813
[9] Kessels W M M, Hong J, Van Assche F J H 2002 American Vacuum Society 20 1704
[10] Yu W, Liu L H, Hou H H, Ding X C, Han L, Fu G S 2003 Acta Phys. Sin. 52 0687 (in Chinese) [于威, 刘丽辉, 侯海虹, 丁学成, 韩理, 傅广生 2003 52 0687]
[11] Zhao X M, Di G Q 2004 Acta Phys. Sin. 53 0306 (in Chinese) [赵新民, 狄国庆 2004 53 0306]
[12] Ma T C, Hu X W, Chen Y H 1988 Plasma physics principle (Hefei: University of Science and Technology of China Press) P100 (in Chinese) [马腾才, 胡希伟, 陈银华 1988 等离子体物理原理 (合肥: 中国科技大学出版社) 第100页]
[13] Zhu Y, Di G Q, Zhao D T 2001 Journal of Functional Materials and Devices 7 0384 (in Chinese) [朱炎, 狄国庆, 赵登涛 2001 功能材料与器件学报 7 0384]
[14] Cao Y L 2011 M.S. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [曹英丽 2011 硕士学位论文 (大连: 大连理工大学)]
[15] Hua X S, Zhang Y J, Wang H W 2009 Solar Energy Materials and Solar Cells 10 27
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