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Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.
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Keywords:
- ZnO /
- nanobelt /
- field effect transistor /
- mobility
[1] Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308
[2] Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039
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[4] Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475
[5] Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182
[6] Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406
[7] Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504
[8] Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203
[9] Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102
[10] Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114
[11] Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939
[12] De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202
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[15] Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43
[16] Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 62 187302]
[17] Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 61 057201]
[18] Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103
[19] Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109
[20] Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466
[21] Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504
[22] Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707
[23] Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052
[24] Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120
[25] Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923
[26] Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20
[27] Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206
[28] Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 60 097405]
[29] Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109
[30] Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574
[31] Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391
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[1] Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308
[2] Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039
[3] Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246
[4] Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475
[5] Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182
[6] Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406
[7] Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504
[8] Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203
[9] Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102
[10] Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114
[11] Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939
[12] De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202
[13] Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594
[14] Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102
[15] Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43
[16] Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 62 187302]
[17] Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 61 057201]
[18] Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103
[19] Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109
[20] Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466
[21] Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504
[22] Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707
[23] Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052
[24] Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120
[25] Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923
[26] Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20
[27] Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206
[28] Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 60 097405]
[29] Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109
[30] Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574
[31] Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391
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