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In this paper, Ce doped-SiC nanowires were prepared by chemical vapor reaction technique at the different synthesis temperatures, and the field emission (FE) properties of the nanowires were measured. The products were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED) and X-ray diffraction (XRD). The results suggested that the products were β-SiC, the nanowires become bending and the content of Ce reduces with increasing temperature; the values of the turn-on and threshold field increase at first and then decrease. When the synthesis temperature is 1250 ℃, the content of Ce is 0.27 at%, the turn-on and threshold fields of the product are 2.5 V/μm and 5.2 V/μm.
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Keywords:
- synthesis temperature /
- SiC nanowires /
- field emission (FE) properties
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[8] Pan Z W, Lai H L, Au Frederick C K, Duan X F, Zhou W Y, Shi W S, Wang N, Lee C S, Wong N B, Lee S T 2000 Advanced Material 12 1186
[9] Zhou J Y, Chen Z Y, Xu X B, Zhou M, Ma Z W, Zhao J G, Li R S, Xie E Q 2010 Journal of the American Ceramic Society 93 488
[10] Ryua Y H, Parka B T, Song Y H, Yong K J 2004 Journal of Crystal Growth 271 99
[11] Yang G Z, Cui H, Sun Y, Gong L, Chen J, Jiang D, Wang C X 2009 J. Phys. Chem. C 113 15969
[12] Meng A L, Ren W P, Li Z J, Zhang M, Sun S B 2010 Journal of Functional Materials 365 (in Chinese) [孟阿兰, 任维鹏, 李镇江, 张猛, 孙士斌 2010 功能材料 365]
[13] Li Z J, Ren W P, Meng A L 2010 Appl. Phys. Lett. 97 263117
[14] Li Z J, Gao W D, Meng A L, Geng Z D, Wan L B 2008 J. Crys. Growth 310 4401
[15] Ennen H, Schneider J, Pomrenke G, Axmann A 1983 Appl. Phys. Lett. 43 943
[16] Liao G J, Yan S F, Ba D C 2008 Acta Phys. Sin. 57 7327 (in Chinese) [廖国进, 闫绍峰, 巴德纯 2008 57 7327]
[17] Chen L, Li J H, Ge M F 2009 J. Phys. Chem. C 113 21177
[18] Li Z J, Wan L B, Meng A L, Gao W D 2008 Development and Application of Materials 23 46 (in Chinese) [李镇江, 万里冰, 孟阿兰, 高卫东 2008 材料开发与应用 23 46]
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[1] Sun H J, Liang S D 2007 Acta Phys. Sin. 57 1930 (in Chinese) [孙海军, 梁世东 2007 57 1930]
[2] Bai X, Zhang G M, Wang M S, Zhang Z X, Yu J, Zhao X Y, Guo D Z, Xue Z Q 2009 Chin. Phys. B 18 3517
[3] Fan Z Q, Zhang B L, Yao N, Lu Z L, Yang S E, Ma B X 2003 Chin. Phys. Lett. 20 1991
[4] Zhang A X, Cai K F 2006 Mate. Rev. 20 106 (in Chinese) [张爱霞, 蔡克峰 2006 材料导报 20 106]
[5] Amoros P, Beltran D, Guillem C, Latorre J 2002 Chem. Mater. 14 1585
[6] Wu R B, Pan Y, Yang G Y 2007 J. Phys. Chem. C 111 6233
[7] Wong K W, Zhou X T, Au Fredek C K, Lai H L, Lee C S, Lee S T 1999 Appl. Phys. Lett 75 2918
[8] Pan Z W, Lai H L, Au Frederick C K, Duan X F, Zhou W Y, Shi W S, Wang N, Lee C S, Wong N B, Lee S T 2000 Advanced Material 12 1186
[9] Zhou J Y, Chen Z Y, Xu X B, Zhou M, Ma Z W, Zhao J G, Li R S, Xie E Q 2010 Journal of the American Ceramic Society 93 488
[10] Ryua Y H, Parka B T, Song Y H, Yong K J 2004 Journal of Crystal Growth 271 99
[11] Yang G Z, Cui H, Sun Y, Gong L, Chen J, Jiang D, Wang C X 2009 J. Phys. Chem. C 113 15969
[12] Meng A L, Ren W P, Li Z J, Zhang M, Sun S B 2010 Journal of Functional Materials 365 (in Chinese) [孟阿兰, 任维鹏, 李镇江, 张猛, 孙士斌 2010 功能材料 365]
[13] Li Z J, Ren W P, Meng A L 2010 Appl. Phys. Lett. 97 263117
[14] Li Z J, Gao W D, Meng A L, Geng Z D, Wan L B 2008 J. Crys. Growth 310 4401
[15] Ennen H, Schneider J, Pomrenke G, Axmann A 1983 Appl. Phys. Lett. 43 943
[16] Liao G J, Yan S F, Ba D C 2008 Acta Phys. Sin. 57 7327 (in Chinese) [廖国进, 闫绍峰, 巴德纯 2008 57 7327]
[17] Chen L, Li J H, Ge M F 2009 J. Phys. Chem. C 113 21177
[18] Li Z J, Wan L B, Meng A L, Gao W D 2008 Development and Application of Materials 23 46 (in Chinese) [李镇江, 万里冰, 孟阿兰, 高卫东 2008 材料开发与应用 23 46]
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