A novel organic light-emitting diode by utilizing double hole injection layer

Liu Bai-Quan; Lan Lin-Feng; Zou Jian-Hua; Peng Jun-Biao

doi:10.7498/aps.62.087302

Abstract

Highly efficient organic light-emitting diode is fabricated with a novel double hole injection layer consisting of MeO-TPD/CuPc. We observe that the insertion of such a double hole injection layer leads to a striking enhancement in the electrical property:higher luminance, power efficiency and lower driving voltage. It has the configuration of ITO/MeO-TPD (15 nm)/CuPc(15 nm)/NPB(15 nm)/Alq3 (50 nm)/LiF(1 nm)/Al(120 nm). Its turn-on voltage is 3.2 V, which is 2, 0.3 and 0.1 V lower than those of the device without hole injection layer (device A) and the devices using MeO-TPD (device B), CuPc (device C) as hole injection layer, respctively. The highest luminance of the novel device reaches 23893 cd/m2 at a drving voltage of 10 V. The maximum power efficiency of the novel decive is 1.91 lm/W, which is 43% (1.34 lm/W), 22% (1.57 lm/W) and 7% (1.79 lm/W) higher than those of devices A, B and C, respectively. The improvement is ascribed to its high hole injection and transport ability. The results are verified by using the J-V curves of "hole-only" devices.

Keywords:

Authors and contacts

1.
Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China;
2.
State Key Laboratory of Luminescent Materials and Devices, Guangzhou 510640, China
Funds: Project supported by the National Basic Research Program Project of China (Grant No. 2009CB623604), the National Natural Science Foundation of China (Grant Nos. 61204087, 51173049, U0634003, 61036007, 60937001), and the Fundamental Research Fund for the Central Universities, China (Grant Nos. 2011ZB0002, 2011ZM0009).

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Cited By

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Zou J H, Tao H, Wu H B, Peng J B 2009 Acta Phys. Sin. 58 1224 (in Chinese) [邹建华, 陶洪, 吴宏滨, 彭俊彪 2009 58 1224]
[3]	Zou J H, Lan L F, Xu R X, Yang W, Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华, 兰林锋, 徐瑞霞, 杨伟, 彭俊彪 2010 59 1275]
[4]	Li C, Peng J B, Zeng W J 2009 Acta Phys. Sin. 58 1992 (in Chinese) [李春, 彭俊彪, 曾文进 2009 58 1992]
[5]	Zou J H, Liu J, Wu H B, Yang W, Peng J B, Cao Y 2009 Org. Electron. 10 843
[6]	Wang X P, Mi B X, Gao Z Q, Guo Q, Huang W 2011 Acta Phys. Sin. 60 087808 (in Chinese) [王旭鹏, 密保秀, 高志强, 郭晴, 黄维 2011 60 087808]
[7]	Toshinori M, Yoshiki K, Hideyuki M 2007 Appl. Phys. Lett. 91 253504
[8]	Lee Y H, Kim W J, Kim T Y, Jung J, Lee J Y, Park H D, Kim T W, Hong J W 2007 Current Appl. Phys. 7 409
[9]	Chen S F, Wang C W 2004 Appl. Phys. Lett. 85 765
[10]	Zhang H M, Choy W C H 2008 IEEE Trans. Electron Dev. 55 2517
[11]	Hou J, Wu J, Xie Z, Wang L 2009 Appl. Phys. Lett. 95 203508
[12]	Lin H P, Yu D, Zhang B, X W, Li J, Zhang L, Jiang X Y, Zhang Z L 2010 Solid State Commun. 150 1601
[13]	Qiu C F, Peng H J, Chen H Y, Xie Z L, Wong M, Kwok H S 2004 IEEE Trans. Electron Dev. 51 1207
[14]	Zhao Y B, Chen J S, Chen W, Ma D G 2012 J. Appl. Phys. 111 043716
[15]	Lee H, Lee J, Jeon P, Jeong K, Yi Y, Kim T G, Kim J W, Lee J W 2012 Org. Electron. 13 820
[16]	Zou Y, Deng Z, Lv Z, Chen Z, Xu D, Chen Y, Yin Y, Du H, Wang Y 2010 J. Lumin. 130 959
[17]	Scott J C, Kaufman J H, Brock P J, Dipietro R, Salem J, Goitia J A 1996 J. Appl. Phys. 792745
[18]	Vanslyke S A, Chen C H, Tang C W 1996 Appl. Phys. Lett. 69 2160
[19]	Shi C W, Tang C W 1997 Appl. Phys. Lett. 70 1665
[20]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679

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Vol. 62, Issue 8 - 2013-04-20

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