-
The precipitation behavior of copper in denuded zone (DZ) of Czochralski silicon has been systematically investigated by means of etching and optical microscopy (OM). Firstly, the samples were treated in a conventional furnace by high-low-high annealing for the formation of denuded zone. Subsequently, copper contamination was introduced at different temperatures. Finally, samples were treated with rapid thermal annealing (RTA) and conventional furnace annealing separately. It was found that, copper precipitates could be observed in DZ through OM only in the samples which experienced RTA followed by contamination in 900 ℃ and 1100 ℃. This indicates that the out-diffusion of vacancy which is produced in the process of RTA is the main cause for the copper precipitation in DZ.
-
Keywords:
- Czochralski silicon /
- copper precipitation /
- denuded zone
[1] ThomPson S, Parthasarathy S 2006 MaterialsThday 9 20
[2] Liu B C, Huang T Y 2006 China Materials Engineering Dictionary (Vol. 11) (beijing: Chemical Industry Press) p116-119 (in Chinese) [柳百成, 黄天佑 2006 中国材料工程大典(11 卷) (北京: 化学工业出版社) 第116–119页]
[3] Bergholz W, Gilles D 2000 Phys. Stat. Sol. (b) 5 222
[4] Shimura F, Willardson R K 1994 Academic Press 41
[5] Isomae S, Aoki S, Watanabe K 1983 J. Appl. Phys. Lett. 55 817
[6] Broniatowski A 1989 Phys. Rev. Lett. 62 3074
[7] Davis J R, Rohatgi A 1980 J. Cryst. Growth. 75 67
[8] Bains S K, Griffiths D P, Wilkes J G, Series R W, Barraclough K G 1990 J. Electrochem. Soc. 137 647
[9] Hamet J F, Abdelaoui R, Nouet G 1990 J. Appl. Phys. 68 638
[10] Xu J, Li F L, Yang D R 2007 Acta Phy. Sin. 4113 56 (in Chinese) [徐进, 李福龙, 杨德仁 2007 56 4113]
[11] Zhu X, Yang D R, Li M, Chen T, Wang L, Que D L 2008 Chin. Phys. Lett. 25 651
[12] Seibt M, Griess M, Istraov A A, Hedemann H, Sattler A 1998 Phys. Stat. Sol. (a) 166 171
[13] Istratov A A, Weber E R 1998 Appl. Phys. A 66 123
[14] Sachdeva R, Istratov A A, Weber E R 2001 Appl. Phys. Lett. 79 2937
[15] Istratov A A, Weber E R 2002 J. Electrochem. Soc. 79 2397
[16] Goetzberger A, Shockley W 1960 J. Appl. Phys. 31 1821
[17] Miyazaki M, Sano M, Sumita S, Fujino N 1991 Jpn. J. Appl. Phys. 30 L295
[18] Honda K, Ohsawa A, Toyokura N 1984 Appl. Phys. Lett. 45 270
[19] Hiramoto K, Sano M, Sadamitsu S, Fujino N 1989 Jpn. J. Appl. Phys. 28 L2109
[20] Wendt H, Cerva H, Lehmann V, Pamler W 1989 J. Appl. Phys. 65 2402
[21] Istratov A A, Flink C, Hieslmair H 2000 Mater. Sci. Eng. B 72 99
[22] Andrei A, Istratov A A, Weber E R 2002 J. Electrochem. Soc. G21 149
[23] Xi Z Q, Yang D R, Xu J 2003 Appl. Phys. Lett. 83 3048
[24] Istratova A A, Weber E R 1998 Appl. Phys. A: Mater. Sci. Pro. A66 123
[25] Tan T Y, Gardner E E, Tice W K 1977 Appl. Phys. Lett. 30 175
[26] Nakamura K, Saishoji T, Kubota T, Iida T, Shimanuki Y, Kotooka T 1997 J. Cryst. Growth. 180 31
[27] Frewen T A, Sinno T 2006 Appl. Phys. Lett. 89 191903
[28] Strunk H, Gosele U, Kolbesen B O 1979 Appl. Phys. Lett. 34 530
[29] Cristiano F, Grisolia J, Colombeau B 2000 J. Appl. Phys. 87 8420
[30] Wang Y Z, Wang N T, Ji C, Zhang G C, Xu J 2012 Acta Phy. Sin. 61 016105 (in Chinese) [王永志, 王娜婷, 吉川, 张光超, 徐进 2012 61 016105]
-
[1] ThomPson S, Parthasarathy S 2006 MaterialsThday 9 20
[2] Liu B C, Huang T Y 2006 China Materials Engineering Dictionary (Vol. 11) (beijing: Chemical Industry Press) p116-119 (in Chinese) [柳百成, 黄天佑 2006 中国材料工程大典(11 卷) (北京: 化学工业出版社) 第116–119页]
[3] Bergholz W, Gilles D 2000 Phys. Stat. Sol. (b) 5 222
[4] Shimura F, Willardson R K 1994 Academic Press 41
[5] Isomae S, Aoki S, Watanabe K 1983 J. Appl. Phys. Lett. 55 817
[6] Broniatowski A 1989 Phys. Rev. Lett. 62 3074
[7] Davis J R, Rohatgi A 1980 J. Cryst. Growth. 75 67
[8] Bains S K, Griffiths D P, Wilkes J G, Series R W, Barraclough K G 1990 J. Electrochem. Soc. 137 647
[9] Hamet J F, Abdelaoui R, Nouet G 1990 J. Appl. Phys. 68 638
[10] Xu J, Li F L, Yang D R 2007 Acta Phy. Sin. 4113 56 (in Chinese) [徐进, 李福龙, 杨德仁 2007 56 4113]
[11] Zhu X, Yang D R, Li M, Chen T, Wang L, Que D L 2008 Chin. Phys. Lett. 25 651
[12] Seibt M, Griess M, Istraov A A, Hedemann H, Sattler A 1998 Phys. Stat. Sol. (a) 166 171
[13] Istratov A A, Weber E R 1998 Appl. Phys. A 66 123
[14] Sachdeva R, Istratov A A, Weber E R 2001 Appl. Phys. Lett. 79 2937
[15] Istratov A A, Weber E R 2002 J. Electrochem. Soc. 79 2397
[16] Goetzberger A, Shockley W 1960 J. Appl. Phys. 31 1821
[17] Miyazaki M, Sano M, Sumita S, Fujino N 1991 Jpn. J. Appl. Phys. 30 L295
[18] Honda K, Ohsawa A, Toyokura N 1984 Appl. Phys. Lett. 45 270
[19] Hiramoto K, Sano M, Sadamitsu S, Fujino N 1989 Jpn. J. Appl. Phys. 28 L2109
[20] Wendt H, Cerva H, Lehmann V, Pamler W 1989 J. Appl. Phys. 65 2402
[21] Istratov A A, Flink C, Hieslmair H 2000 Mater. Sci. Eng. B 72 99
[22] Andrei A, Istratov A A, Weber E R 2002 J. Electrochem. Soc. G21 149
[23] Xi Z Q, Yang D R, Xu J 2003 Appl. Phys. Lett. 83 3048
[24] Istratova A A, Weber E R 1998 Appl. Phys. A: Mater. Sci. Pro. A66 123
[25] Tan T Y, Gardner E E, Tice W K 1977 Appl. Phys. Lett. 30 175
[26] Nakamura K, Saishoji T, Kubota T, Iida T, Shimanuki Y, Kotooka T 1997 J. Cryst. Growth. 180 31
[27] Frewen T A, Sinno T 2006 Appl. Phys. Lett. 89 191903
[28] Strunk H, Gosele U, Kolbesen B O 1979 Appl. Phys. Lett. 34 530
[29] Cristiano F, Grisolia J, Colombeau B 2000 J. Appl. Phys. 87 8420
[30] Wang Y Z, Wang N T, Ji C, Zhang G C, Xu J 2012 Acta Phy. Sin. 61 016105 (in Chinese) [王永志, 王娜婷, 吉川, 张光超, 徐进 2012 61 016105]
Catalog
Metrics
- Abstract views: 6432
- PDF Downloads: 606
- Cited By: 0
下载:
