Optical properties of GaN:Tb nanoparticles synthesized by simple ammonification method

Pan Xiao-Jun; An Xiu-Yun; Zhang Hai-Jun; Zhang Zhen-Xing; Xie Er-Qing

doi:10.7498/aps.62.037105

Abstract

GaN:Tb nanoparticles are synthesized by simple ammonification of a mixture of Ga(NO3)3 and Tb(NO3)3. The XRD result shows that the sample predominantly presents hexagonal phase of GaN and its average grain size is 22.1 nm. TEM images show that the sizes of the particles are almost uniform. Besides conventional GaN Raman shifts, two extra peaks at 251 and 414 cm-1 observed in the Raman spectra can be attributed to the phonons activated by surface disorders or finite-size effects and vibration mode of N-rich octahedral Ga-N6 bonds, respectively. From photoluminescence spectra, four characteristic peaks of Tb3+ions are clearly observed: 5D4 →7F6(493.9 nm), 5D4 →7F5(551.2 nm), 5D4 →7F4(594.4 nm), 5D4 →7F3(630.1 nm).

Keywords:

Authors and contacts

1.
School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
Funds: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. lzujbky-2012-34).

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Cited By

[1]	Nakamura S, Mukai T, Senoh M 1994 Appl. Phys. Lett. 64 1687
[2]	Wilson R G, Schwartz R N, Abernathy C R, Peartor S J, Newman N, Rubin M, Fu T, Zavada J M 1994 Appl. Phys. Lett. 65 992
[3]	Steckl A J, Birkhahn R 1998 Appl. Phys. Lett. 73 1700
[4]	Steckl A J, Zavada J M 1999 MRS Bull. 24 33
[5]	Steckl A J, Heinkenfeld J C, Lee D S, Garter M J, Baker C C, Wang Y, Jones R 2002 IEEE J. Sel. Top. Quantum Electron. 8 749
[6]	Kim J H, Shepherd N, Davidson M, Holloway P H 2003 Appl. Phys. Lett. 83 641
[7]	Kim J H, Davidson M R, Holloway P H 2003 Appl. Phys. Lett. 83 4746
[8]	Kim J H, Holloway P H 2004 J. Appl. Phys. 95 4787
[9]	Pan X J, Zhang Z X, Jia L, Li H, Xie E Q 2008 J. Alloy. Compd. 458 579
[10]	Pan X J, Zhang Z X, Wang T, Li H, Xie E Q 2008 Acta Phys. Sin. 57 3786 (in Chinese) [潘孝军, 张振兴, 王涛, 李晖, 谢二庆 2008 57 3786]
[11]	Xie Y, Qian Y T, Wang W Z, Zhang S Y, Zhang Y H 1996 Science 272 1926
[12]	Pan G Q, Kordesch M E, Patten P G 2006 Chem. Mater. 18 5392
[13]	Jian J K, Chen X L, He M, Wang W J, Zhang X N, Shen F 2003 Chem. Phys. Lett. 368 416
[14]	Lan Z H, Liang C H, Hsu C W, Wu C T, Lin H M, Dhara S, Chen K H, Chen L C, Chen C C 2004 Adv. Funct. Mater. 14 233
[15]	Seong H K, Kim J Y, Kim J J, Lee S C, Kim S R, Kim U, Park T E, Choi H J 2007 Nano Lett. 7 3366
[16]	Cavallini A, Polenta L, Rossi M 2007 Nano Lett. 7 2166
[17]	Jacobs B W, Ayres V M, Petkov M P, Halpern J B, He M Q, Baczewski A D, McElroy K, Crimp M A, Zhang J M, Shaw H C 2007 Nano Lett. 7 1435
[18]	Wu H Q, Poitras C B, Lipson M, Spencer M G, Hunting J, DiSalvo F J 2006 Appl. Phys. Lett. 88 011921
[19]	Podhorodecki A, Nyk M, Misiewicz J, Strek W 2007 J. Lumin. 126 219
[20]	Podhorodecki A, Nyk M, Kudrawiec R, Misiewicz J, Strek W 2007 Electrochem. Solid-State Lett. 10 H88
[21]	Pan X J, An X Y, Zhang Z X, Zhou J Y, Xie E Q 2012 J. Alloy. Compd. 519 67
[22]	Andreev A A 2003 Phys. Solid State 45 419
[23]	Liu Q L, Tanaka T, Hu J Q, Xu F F, Sekiguchi T 2003 Appl. Phys. Lett. 83 4939
[24]	Jian J K, Chen X L, He M, Wang W J, Zhang X N, Shen F 2003 Chem. Phys. Lett. 368 416
[25]	Bae S Y, Seo H W, Park J, Yang H, Kim B 2003 Chem. Phys. Lett. 376 445
[26]	Lan Z H, Liang C H, Hsu C W, Wu C T, Lin H M, Dhara S, Chen K H, Chen L C, Chen C C 2004 Adv. Funct. Mater. 14 233
[27]	Scherrer P 1918 Göttinger Nachrichten Gesell. 2 98
[28]	Orton J W, Foxon C T 1998 Rep. Prog. Phys. 61 1
[29]	Asghar M, Hussain I, Saleemi F, Bustarret E, Cibert J, Kuroda S, Marcet S, Mariette H, Bhatti A S 2006 Mater. Sci. Eng. B 133 102
[30]	Chen C C, Yeh C C, Chen C H, Yu M. Y, Liu H L, Wu J J, Chen K H, Chen L C, Peng J Y, Chen Y F 2001 J. Am. Chem. Soc. 123 2791
[31]	Liu H L, Chen C C, Chia C T, Yeh C C, Chen C H, Yu M Y, Keller S, DenBaars S P 2001 Chem. Phys. Lett. 345 245
[32]	Gebicki W, Strzeszewski J, Kamler G, Szyszko T, Podsiadlo S 2000 Appl. Phys. Lett. 76 3870
[33]	Siegle H, Kaczmarczyk G, Filippidis L, Litvinchuk A P, Hoffmann A, Thomsen C 1997 Phys. Rev. B 55 7000
[34]	Limmer W, Ritter W, Sauer R, Mensching B, Liu C, Rauschenbach B 1998 Appl. Phys. Lett. 72 2589
[35]	Marco de Lucas M C, Fabreguette F, Linsavanh M, Imhoff L, Heintz O, Josse-Courty C, Mesnier M T, Potin V, Bourgeois S, Sacilotti M 2004 J. Cryst. Growth 261 324
[36]	Li H D, Zhang S L, Yang H B, Zou G T, Yang Y Y, Yue K T, Wu X H, Yan Y 2002 J. Appl. Phys. 91 4562
[37]	Ning J Q, Xu S J, Yu D P, Shan Y Y, Lee S T 2007 Appl. Phys. Lett. 91 103117

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Vol. 62, Issue 3 - 2013-02-05

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