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Roughening and pre-roughening processes on InGaAs surface are studied using scanning tunneling microscopy. There are different roughening and pre-roughening processes for InGaAs films at different substrate temperatures and As beam equivalent pressure. Under low temperature and low As beam equivalent pressure, pits is main mechanism in the beginning of InGaAs morphology evolution, with the increase of annealing time, a great number of pits and islands are observed which make the surface rough. Small islands should play a leading role during the InGaAs morphology evolution at high temperature and high As beam equivalent pressure, and the number of islands will increase gradually with the increase of annealing time till it reaches an equilibrium state.
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Keywords:
- InGaAs films /
- roughening /
- pre-roughening
[1] den Nijs M 1990 Phys. Rev. Lett. 64 435
[2] den Nijs M, Rommelse K 1987 Phys. Rev. B 40 4709
[3] Ding Z, Bullock D W, Thibado P M, LaBella V P, Mullen K 2003 Surf. Sci. 540 491
[4] Madelung O 1991 Semiconducting Group IV Elements and V/III Compound (Berlin: Spinger-Verlag) p60
[5] Niu Z C, Zhou Z Q, Lin Y W, Li X F 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川, 周增圻, 林耀望, 李新峰 1997 46 969]
[6] Zhou H Z, Cheng M T, Xue Q K 2005 Acta Phys. Sin. 54 4141 (in Chinese) [周慧君, 程木田, 薛其坤 2005 54 4141]
[7] Wang B R, Sun Z, Xu Z Y, Sun B Q, Ji Y 2008 Acta Phys. Sin. 57 1908 (in Chinese) [王宝瑞, 孙征, 徐仲英, 孙宝权, 姬扬 2008 57 1908]
[8] Sears L E 2009 Ph. D. Dissertation (Michigan: Michigan University, USA)
[9] Zhou X, Yang Z R, Luo Z J, He Y Q, He H, Ding Z 2011 Acta Phys. Sin. 60 016109 (in Chinese) [周勋, 杨再荣, 罗子江, 贺业全, 何浩, 丁召 2011 60 016109]
[10] Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2010 J. Funct. Mater. 41 704 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2010 功能材料 41 704]
[11] Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2011 J. Funct. Mater. 42 816 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2011 功能材料 42 816]
[12] Zhang B C, Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 048101
[13] Priester C, Lannoo M 1995 Phys. Rev. Lett. 75 93
[14] Slanina F, Krug J, Kotrla M 2005 Phys. Rev. E 71 041605
[15] Sato M 2011 Phys. Rev. E 84 061604
[16] Riposan A, Martin G K M, Millunchik J M 2003 Appl. Phys. Lett. 83 4518
[17] Pamplin B R 1975 Crystal Growth (Oxford: Pergamum Press) p22
[18] Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 046103
[19] Ding Z, Bullock D W, Oliver W F, Thibado P M, LaBella V P 2003 J. Crystal Growth 251 35
[20] LaBella V P, Bullock D W, Anser M, Ding Z, Thibado P M 2000 Phys. Rev. Lett. 84 4152
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[1] den Nijs M 1990 Phys. Rev. Lett. 64 435
[2] den Nijs M, Rommelse K 1987 Phys. Rev. B 40 4709
[3] Ding Z, Bullock D W, Thibado P M, LaBella V P, Mullen K 2003 Surf. Sci. 540 491
[4] Madelung O 1991 Semiconducting Group IV Elements and V/III Compound (Berlin: Spinger-Verlag) p60
[5] Niu Z C, Zhou Z Q, Lin Y W, Li X F 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川, 周增圻, 林耀望, 李新峰 1997 46 969]
[6] Zhou H Z, Cheng M T, Xue Q K 2005 Acta Phys. Sin. 54 4141 (in Chinese) [周慧君, 程木田, 薛其坤 2005 54 4141]
[7] Wang B R, Sun Z, Xu Z Y, Sun B Q, Ji Y 2008 Acta Phys. Sin. 57 1908 (in Chinese) [王宝瑞, 孙征, 徐仲英, 孙宝权, 姬扬 2008 57 1908]
[8] Sears L E 2009 Ph. D. Dissertation (Michigan: Michigan University, USA)
[9] Zhou X, Yang Z R, Luo Z J, He Y Q, He H, Ding Z 2011 Acta Phys. Sin. 60 016109 (in Chinese) [周勋, 杨再荣, 罗子江, 贺业全, 何浩, 丁召 2011 60 016109]
[10] Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2010 J. Funct. Mater. 41 704 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2010 功能材料 41 704]
[11] Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Ding Z 2011 J. Funct. Mater. 42 816 (in Chinese) [罗子江, 周勋, 杨再荣, 贺业全, 何浩, 丁召 2011 功能材料 42 816]
[12] Zhang B C, Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 048101
[13] Priester C, Lannoo M 1995 Phys. Rev. Lett. 75 93
[14] Slanina F, Krug J, Kotrla M 2005 Phys. Rev. E 71 041605
[15] Sato M 2011 Phys. Rev. E 84 061604
[16] Riposan A, Martin G K M, Millunchik J M 2003 Appl. Phys. Lett. 83 4518
[17] Pamplin B R 1975 Crystal Growth (Oxford: Pergamum Press) p22
[18] Zhou X, Luo Z J, Ding Z 2012 Chin. Phys. B 21 046103
[19] Ding Z, Bullock D W, Oliver W F, Thibado P M, LaBella V P 2003 J. Crystal Growth 251 35
[20] LaBella V P, Bullock D W, Anser M, Ding Z, Thibado P M 2000 Phys. Rev. Lett. 84 4152
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