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The electronic structure and permittivity of Al-doped 3C-SiC are studied by using the first principles plane-wave pseudopotential method based on the density functional theory, and compared with those of undoped 3C-SiC. Results show that the Fermi energy level introduced into valence band and band gap is slightly widened through Al doping for 3C-SiC, and that the permittivity is greatly improved in a frequency range of 8.2-12.4 GHz. Al doped 3C-SiC powder absorber is prepared by combustion synthesis, and the permittivities of the samples are measured in the frequency range of 8.2-12.4 GHz by vector network analyzer, which validates the results of theoretical calculation. The mechanism of microwave loss is discussed.
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Keywords:
- Al-doped SiC /
- first principles /
- band structure /
- dielectric property
[1] Qing Y, Zhou W, Luo F, Zhu D 2010 Carbon 48 4074
[2] Gairola S P, Vivek V, Singh A, Purohit L P, Kotnala R K 2010 Solid State Commun. 150 147
[3] Chen W B, Han M G, Deng L J 2011 Acta Phys. Sin. 60 017507 (in Chinese) [陈文兵, 韩满贵, 邓龙江 2011 60 017507]
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[5] Li Z M, Du H L, Luo F, Su X L, Zhou W C 2007 Rare Metal Materials and Engineering 36 94 (in Chinese) [李智敏, 杜红亮, 罗发, 苏晓磊, 周万城 2007 稀有金属材料与工程 36 94]
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[8] Li Z, Zhou W, Su X, Luo F, Huang Y, Wang C 2011 J. Alloys Compd. 509 973
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[10] Zhao D, Zhao H, Zhou W 2001 Physica E 9 679
[11] Zhang B, Li J, Sun J, Zhang S, Zhai H, Du Z 2002 J. Eur. Ceram. Soc. 22 93
[12] Sun J, Li J, Sun G, Zhang B, Zhang S, Zhai H 2002 Ceram. Int. 28 741
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[15] Santos de Oliveira I S, Miwa R H 2009 Phys. Rev. B 79 085427
[16] Song J X, Yang Y T, Chai C C, Liu H X, Ding R X 2008 Journal of Xidian University 35 87 (in Chinese) [宋久旭, 杨银堂, 柴常春, 刘红霞, 丁瑞雪 2008 西安电子科技大学学报 35 87]
[17] Zhang Y, Shao X H, Wang Z Q 2010 Acta Phys. Sin. 59 5652 (in Chinese) [张云, 邵晓红, 王治强 2010 59 5652]
[18] Luo F, Liu X, Zhu D, Zhou W 2008 J. Am. Ceram. Soc. 91 4151
[19] Heera V, Panknin D, Skorupa W 2001 Appl. Surf. Sci. 184 307
[20] Li Z, Zhou W, Su X, Huang Y, Li G, Wang Y 2009 J. Am. Ceram. Soc. 92 2116
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[1] Qing Y, Zhou W, Luo F, Zhu D 2010 Carbon 48 4074
[2] Gairola S P, Vivek V, Singh A, Purohit L P, Kotnala R K 2010 Solid State Commun. 150 147
[3] Chen W B, Han M G, Deng L J 2011 Acta Phys. Sin. 60 017507 (in Chinese) [陈文兵, 韩满贵, 邓龙江 2011 60 017507]
[4] He Y F, Gong R Z, Wang X, Zhao Q 2008 Acta Phys. Sin. 57 5261 (in Chinese) [何燕飞, 龚荣洲, 王鲜, 赵强 2008 57 5261]
[5] Li Z M, Du H L, Luo F, Su X L, Zhou W C 2007 Rare Metal Materials and Engineering 36 94 (in Chinese) [李智敏, 杜红亮, 罗发, 苏晓磊, 周万城 2007 稀有金属材料与工程 36 94]
[6] Folgueras L C, Nohara E L, Faez R, Rezende M C 2007 Mater. Res. 10 95
[7] Meena R S, Bhattachrya S, Chatterjee R 2010 J. Magn. Magn. Mater. 322 2908
[8] Li Z, Zhou W, Su X, Luo F, Huang Y, Wang C 2011 J. Alloys Compd. 509 973
[9] Kim J B, Lee S K, Kim C G 2008 Compos. Sci. Technol. 68 2909
[10] Zhao D, Zhao H, Zhou W 2001 Physica E 9 679
[11] Zhang B, Li J, Sun J, Zhang S, Zhai H, Du Z 2002 J. Eur. Ceram. Soc. 22 93
[12] Sun J, Li J, Sun G, Zhang B, Zhang S, Zhai H 2002 Ceram. Int. 28 741
[13] Jin H B, Cao M S, Zhou W, Agathopoulos S 2010 Mater. Res. Bull. 45 247
[14] Huang Y X, Cao Q X, Li Z M, Li G F, Wang Y P, Wei Y G 2009 Acta Phys. Sin. 58 590 (in Chinese) [黄云霞, 曹全喜, 李智敏, 李桂芳, 王毓鹏, 卫云鸽 2009 58 590]
[15] Santos de Oliveira I S, Miwa R H 2009 Phys. Rev. B 79 085427
[16] Song J X, Yang Y T, Chai C C, Liu H X, Ding R X 2008 Journal of Xidian University 35 87 (in Chinese) [宋久旭, 杨银堂, 柴常春, 刘红霞, 丁瑞雪 2008 西安电子科技大学学报 35 87]
[17] Zhang Y, Shao X H, Wang Z Q 2010 Acta Phys. Sin. 59 5652 (in Chinese) [张云, 邵晓红, 王治强 2010 59 5652]
[18] Luo F, Liu X, Zhu D, Zhou W 2008 J. Am. Ceram. Soc. 91 4151
[19] Heera V, Panknin D, Skorupa W 2001 Appl. Surf. Sci. 184 307
[20] Li Z, Zhou W, Su X, Huang Y, Li G, Wang Y 2009 J. Am. Ceram. Soc. 92 2116
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