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The instability process of planar interface in directional solidification with respect to the crystallographic orientation is studied using a transparent model alloysuccinonitrile-acetone. Three typical crystal grains which have preferred dendrite, tilted dendrite and seaweed patterns at rapid pulling velocity respectively are chosen in our experiment. The experimental results show that the preferred dendrite grain has the shortest incubation time and the smallest initial perturbation wavelength of planar interface instability, the tilted dendrite grain has the largest ones and the seaweed grain has median ones. These results accord qualitatively with previous analytical results and phase-field simulation results. It is also found that the interfacial non-steady-state evolution behaviors of the preferred dendrite grain and the tilted dendrite grain are significantly different from that of the seaweed grain, suggesting that the non-steady-state evolution behavior of planar interface instability is closely related to the crystallographic orientation.
[1] Trivedi R, Somboonsuk K 1985 Acta Metall. 33 1061
[2] Mullins W W, Sekerka R F 1964 J. Appl. Phys. 35 444
[3] Huang W D, Zhou Y H 1991 Acta Metall. Sin. 27 A86 (in Chinese) [黄卫东, 周尧和 1991 金属学报 27 A86]
[4] Warren J A, Langer J S 1993 Phys. Rev. E 47 2702
[5] Losert W, Shi B Q, Cummins H Z 1998 Proc. Natl. Acad. Sci. 95 431
[6] Losert W, Shi B Q, Cummins H Z 1998 Proc. Natl. Acad. Sci. 95 439
[7] Lin X, Li T, Wang L L, Su Y P, Huang W D 2004 Acta Phys. Sin. 53 3971 (in Chinese) [林鑫, 李涛, 王琳琳, 苏云鹏, 黄卫东 2004 53 3971]
[8] Huang W D, Lin X, Li T, Wang L L, Inatomi Y 2004 Acta Phys. Sin. 53 3978 (in Chinese) [黄卫东, 林鑫, 李涛, 王琳琳, Inatomi Y 2004 53 3978]
[9] Pocheau A, Deschamps J, Georgelin M 2007 JOM 59 71
[10] Utter B, Bodenschatz E 2002 Phys. Rev. E 66 051604
[11] Zhao X B, Liu L, Yang C B, Li Y F, Zhang J, Li Y L, Fu H Z 2011 J. Alloys Compd. 509 9645
[12] Coriell S R, Sekerka R F 1976 J. Cryst. Growth 34 157
[13] Hoyle R B, McFadden G B, Davis S H 1996 Phil. Trans. R. Soc. Lond. A 354 2915
[14] Golovin A A, Davis S H 1998 Physica D 116 363
[15] Wang Z J, Wang J C, Yang G C 2009 Phys. Rev. E 80 052603
[16] Wang Z J, Wang J C, Yang G C 2008 Acta Phys. Sin. 57 1246 (in Chinese) [王志军, 王锦程, 杨根仓 2008 57 1246]
[17] Wang Z J, Wang J C, Yang G C 2010 Chin. Phys. B 19 017305
[18] Chen M W, Lan M, Yuan L, Wang Y Y, Wang Z D, Xu J J 2009 Chin. Phys. B 18 1691
[19] Chen M W, Wang X F, Wang Y L, Wang Z D 2012 Adv. Mater. Res. 365 130
[20] Eshelman M A, Trivedi R 1987 Acta Metall. 35 2443
[21] De Cheveign S, Guthmann C, Lebrun M M 1985 J. Cryst. Growth 73 242
[22] Liu L X, Kirkaldy J S 1994 J. Cryst. Growth 144 335
[23] Fornaro O, Palacio H A 2006 Scripta Mater. 54 2149
[24] Lipton J, Glicksman M, Kurz W 1987 Metall. Mater. Trans. A 18 341
[25] Muschol M, Liu D, Cummins H Z 1992 Phys. Rev. A 46 1038
[26] Huang W D, Ding G L, Zhou Y H 1995 Chin. J. Mater. Res. 9 193 (in Chinese) [黄卫东, 丁国陆, 周尧和 1995 材料研究学报 9 193]
[27] Ding G L, Lin X, Huang W D, Zhou Y H 1997 Acta Phys. Sin. 46 1243 (in Chinese) [丁国陆, 林鑫, 黄卫东, 周尧和 1997 46 1243]
[28] Bottin-Rousseau S, Akamatsu S, Faivre G 2002 Phys. Rev. B 66 054102
[29] Karma A 1993 Phys. Rev. E 48 3441
[30] Hoyt J J, Trautt Z T, Upmanyu M 2010 Math. Comput. Simulat. 80 1382
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[1] Trivedi R, Somboonsuk K 1985 Acta Metall. 33 1061
[2] Mullins W W, Sekerka R F 1964 J. Appl. Phys. 35 444
[3] Huang W D, Zhou Y H 1991 Acta Metall. Sin. 27 A86 (in Chinese) [黄卫东, 周尧和 1991 金属学报 27 A86]
[4] Warren J A, Langer J S 1993 Phys. Rev. E 47 2702
[5] Losert W, Shi B Q, Cummins H Z 1998 Proc. Natl. Acad. Sci. 95 431
[6] Losert W, Shi B Q, Cummins H Z 1998 Proc. Natl. Acad. Sci. 95 439
[7] Lin X, Li T, Wang L L, Su Y P, Huang W D 2004 Acta Phys. Sin. 53 3971 (in Chinese) [林鑫, 李涛, 王琳琳, 苏云鹏, 黄卫东 2004 53 3971]
[8] Huang W D, Lin X, Li T, Wang L L, Inatomi Y 2004 Acta Phys. Sin. 53 3978 (in Chinese) [黄卫东, 林鑫, 李涛, 王琳琳, Inatomi Y 2004 53 3978]
[9] Pocheau A, Deschamps J, Georgelin M 2007 JOM 59 71
[10] Utter B, Bodenschatz E 2002 Phys. Rev. E 66 051604
[11] Zhao X B, Liu L, Yang C B, Li Y F, Zhang J, Li Y L, Fu H Z 2011 J. Alloys Compd. 509 9645
[12] Coriell S R, Sekerka R F 1976 J. Cryst. Growth 34 157
[13] Hoyle R B, McFadden G B, Davis S H 1996 Phil. Trans. R. Soc. Lond. A 354 2915
[14] Golovin A A, Davis S H 1998 Physica D 116 363
[15] Wang Z J, Wang J C, Yang G C 2009 Phys. Rev. E 80 052603
[16] Wang Z J, Wang J C, Yang G C 2008 Acta Phys. Sin. 57 1246 (in Chinese) [王志军, 王锦程, 杨根仓 2008 57 1246]
[17] Wang Z J, Wang J C, Yang G C 2010 Chin. Phys. B 19 017305
[18] Chen M W, Lan M, Yuan L, Wang Y Y, Wang Z D, Xu J J 2009 Chin. Phys. B 18 1691
[19] Chen M W, Wang X F, Wang Y L, Wang Z D 2012 Adv. Mater. Res. 365 130
[20] Eshelman M A, Trivedi R 1987 Acta Metall. 35 2443
[21] De Cheveign S, Guthmann C, Lebrun M M 1985 J. Cryst. Growth 73 242
[22] Liu L X, Kirkaldy J S 1994 J. Cryst. Growth 144 335
[23] Fornaro O, Palacio H A 2006 Scripta Mater. 54 2149
[24] Lipton J, Glicksman M, Kurz W 1987 Metall. Mater. Trans. A 18 341
[25] Muschol M, Liu D, Cummins H Z 1992 Phys. Rev. A 46 1038
[26] Huang W D, Ding G L, Zhou Y H 1995 Chin. J. Mater. Res. 9 193 (in Chinese) [黄卫东, 丁国陆, 周尧和 1995 材料研究学报 9 193]
[27] Ding G L, Lin X, Huang W D, Zhou Y H 1997 Acta Phys. Sin. 46 1243 (in Chinese) [丁国陆, 林鑫, 黄卫东, 周尧和 1997 46 1243]
[28] Bottin-Rousseau S, Akamatsu S, Faivre G 2002 Phys. Rev. B 66 054102
[29] Karma A 1993 Phys. Rev. E 48 3441
[30] Hoyt J J, Trautt Z T, Upmanyu M 2010 Math. Comput. Simulat. 80 1382
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