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In consideration of the preparation of CdS/CdTe solar cell back contact layer, the band structure and the density of states of undoped and (Y, Gd) doped in ZnTe were caculated from the plane wave ultra soft pseudo potential method based on density functional theory and generalized gradient approximation. We acquired the system total energy and lattice parameter. As a result, the structural stability improve after doping, the lattice match between ZnTe and CdTe are better when Y doped. (Y, Gd) doped make the ZnTe semiconductor degeneration. Compared with Gd, the electronic effective mass of ZnTe doped with Y are lighter. The carrier concentration order of magnitude in different doping system are same. We analysed the influence on ZnTe used for back contact layer when doped with (Y, Gd).
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Keywords:
- ZnTe /
- rare earth doped /
- first principles /
- solar cell back contact layer
[1] Wu X Z 2004 Solar Energy 77 803
[2] Rioux D, Niles D W, Hochst H 1993 J. Appl. Phys. 73 8381
[3] Kevin D D, Visoly-Fisher I, Hodes G, Cahen D 2000 Solar Energ. Mater. Solar Cell 62 295
[4] Zhong Z X, Zheng J G, Zhong Y Q, Yang F, Feng L H, CaiW, Cai Y P, Zhang J Q, Li B, Lei Z, Li W, Wu L L 2009 Acta Phys. Sin. 58 4923 (in Chinese) [仲郑祥, 郑家贵, 钟永强, 扬帆, 冯良桓, 蔡伟, 蔡亚平, 张静全, 黎兵, 雷智, 李卫, 武莉莉 2009 58 4923]
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[7] Wu Y X, Hu Z X, Gu S L, Liang L C, Li T, Zhang H 2011 Acta Phys. Sin. 60 017101 (in Chinese) [吴玉喜, 胡智向, 顾树林, 梁立成, 李腾, 张昊 2011 60 017101 ]
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[10] Shen Y B, Zhou X, Xu M, Ding Y C, Duan M Y, Linghu R F, Zhu W J 2007 Acta Phys. Sin. 56 3440 (in Chinese) ［沈益斌, 周勋, 徐明, 丁迎春, 段满益, 令狐荣锋, 祝文军 2007 56 3440］
[11] Duan H, Chen X S, Sun L Z, Zhou X H, Lu W 2005 Acta Phys. Sin. 54 5293 (in Chinese) [段鹤, 陈效双, 孙立忠, 周效好, 陆卫 2005 54 5923]
[12] Sun J, Wang H T, He J L, Tian Y J 2005 Phys. Rev. B 71 125132
[13] Yang Y T,Wu J, Cai Y R, Ding R X, Song J X, Shi L C 2008 Acta Phys. Sin. 57 7151 (in Chinese) ［杨银堂, 武军, 蔡玉荣, 丁瑞雪, 宋久旭, 石立春 2008 57 7151］
[14] Björn Lange, Christoph Freysoldt, Jörg Neugebauer 2010 Phys. Rev. B 81 224109
[15] Liu E K, Zhu B S, Luo J S 2010 Physics of Semiconductor (Beijing: National Defense Industry Press) p212 (in Chinese) ［刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (第4版) (北京: 国防工业出版社) 第212页］
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[1] Wu X Z 2004 Solar Energy 77 803
[2] Rioux D, Niles D W, Hochst H 1993 J. Appl. Phys. 73 8381
[3] Kevin D D, Visoly-Fisher I, Hodes G, Cahen D 2000 Solar Energ. Mater. Solar Cell 62 295
[4] Zhong Z X, Zheng J G, Zhong Y Q, Yang F, Feng L H, CaiW, Cai Y P, Zhang J Q, Li B, Lei Z, Li W, Wu L L 2009 Acta Phys. Sin. 58 4923 (in Chinese) [仲郑祥, 郑家贵, 钟永强, 扬帆, 冯良桓, 蔡伟, 蔡亚平, 张静全, 黎兵, 雷智, 李卫, 武莉莉 2009 58 4923]
[5] Zheng X, Li B, Wang Z, Zhang D T, Feng L H, Zhang J Q, Cai Y P, Zheng J G, Wu L L, Li W, Lei Z, Zeng G G 2010 Acta Phys. Sin. 59 2783 (in Chinese) [郑旭, 黎兵, 王钊, 张东廷, 冯良桓, 张静全, 蔡亚平, 郑家贵, 武莉莉, 李卫, 雷智, 曾广根 2010 59 2783]
[6] Li Z X, Li R P, Wu R 2011 Chin. Rare Earths 32 1 (in Chinese) [李忠贤, 李蓉萍, 吴蓉 2011 稀土 32 1]
[7] Wu Y X, Hu Z X, Gu S L, Liang L C, Li T, Zhang H 2011 Acta Phys. Sin. 60 017101 (in Chinese) [吴玉喜, 胡智向, 顾树林, 梁立成, 李腾, 张昊 2011 60 017101 ]
[8] Liu J J 2011 Acta Phys. Sin. 60 037102 (in Chinese) [刘建军 2011 60 037102]
[9] Jin X L, Lou S Y, Kong D G, Li Y C, Du Z L 2006 Acta Phys. Sin. 55 4809 (in Chinese) ［靳锡联, 娄世云, 孔德国, 李蕴才, 杜祖亮 2006 55 4809］
[10] Shen Y B, Zhou X, Xu M, Ding Y C, Duan M Y, Linghu R F, Zhu W J 2007 Acta Phys. Sin. 56 3440 (in Chinese) ［沈益斌, 周勋, 徐明, 丁迎春, 段满益, 令狐荣锋, 祝文军 2007 56 3440］
[11] Duan H, Chen X S, Sun L Z, Zhou X H, Lu W 2005 Acta Phys. Sin. 54 5293 (in Chinese) [段鹤, 陈效双, 孙立忠, 周效好, 陆卫 2005 54 5923]
[12] Sun J, Wang H T, He J L, Tian Y J 2005 Phys. Rev. B 71 125132
[13] Yang Y T,Wu J, Cai Y R, Ding R X, Song J X, Shi L C 2008 Acta Phys. Sin. 57 7151 (in Chinese) ［杨银堂, 武军, 蔡玉荣, 丁瑞雪, 宋久旭, 石立春 2008 57 7151］
[14] Björn Lange, Christoph Freysoldt, Jörg Neugebauer 2010 Phys. Rev. B 81 224109
[15] Liu E K, Zhu B S, Luo J S 2010 Physics of Semiconductor (Beijing: National Defense Industry Press) p212 (in Chinese) ［刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (第4版) (北京: 国防工业出版社) 第212页］
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