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Pure ZnO films and In/ZnO films are prepared by sol-gel process on Si substrates.The ratio of In/(Zn+In) are 5%, 8% and 10% separately. Crystal phase structures and photoelectric properties of these films are characterized and these chromaticity coordinates of different samples are also calculated in a CIE-XYZ color system. The results show that preferred growth direction of ZnO film changes from (002) plane to (001) plane and interplanar distance becomes shorter. When doping amount of In is 5%, Zn atoms are replaced by In atoms. Resistivity of the film first decreases and the increases with the increase of the amount of In. Ultraviolet emission peak of spectrum has a redshift; a new peak emerges at 670nm with the increase of In. The sample of 5% emits white-light.The band structures of pure and 5% doping content of film are calculated based on first principles.The mechanism of emitting white-light is discussed from the view point of additional energy level.
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Keywords:
- In-doped ZnO /
- sol-gel /
- chromaticity coordinate /
- white-light emitting
[1] Fan X M, Lian J S, Guo Z X 2005 Appl. Surf. Sci. 239 176
[2] Zou J, Zhou S M, Xia C T 2005 J. Crys. Grow. 280 185
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[4] Zhou X, Wang S Q, Lian G J, Xiong G C 2006 Chin. Phys. 15 199
[5] Liu Z W, Gu J F, Fu W J, Sun C W, Li Y, Zhang Q Y 2006 Acta Phys. Sin. 55 5479 (in Chinese) [刘志文、谷建峰、付伟佳、孙成伟、李 勇、张庆瑜 2006 55 5479]
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[7] Gao L, Zhang J M 2009 Chin. Phys. B 18 4536
[8] Lu S C, Song G L, Xiao Z Y, Zhang J H, Huang S H 2002 Chinese Journal of Luminescence 23 306 (in Chinese) [吕树臣、宋国立、肖芝雁、张家骅、黄世华 2002 发光学报 23 306]
[9] Hao Y 2005 Optoelectronic Technology & Information 18 65 (in Chinese) [郝 云 2005 光电子技术与信息 18 65]
[10] Guo H H, Lin Z H, Feng Z F, Lin L L, Zhou J Z 2009 J. Phys. Chem. C 113 12546
[11] Guo C F, Ding X, Xu Y 2010 Journal of the American Ceramic Society 93 1708
[12] Zhang J M, Zhao D L, Shen Z M 2010 High Performance Ceramics 6 434
[13] Cao Y, Miao L, Tanemura S 2006 J. Appl. Phys. 45 623
[14] Chris G, Vande W 2001 Physica B 308 310
[15] Ravindra S, Mahesh K, Sudhir C 2007 J. Mater. Sci. 42 4675
[16] Kim S, Wan I L, Hwang S K, Chongmu L 2007 J. Mater. Sci. 42 4845
[17] Lyudmila N D, Lyudmila L T U, Yurn M J 2008 Mater. Sci. 43 2143
[18] Lidia A, Gregorio B, Michele P J 2008 Phys. Chem. C 112 4049
[19] Zhao Y, Fu Y J 2010 Acta Phys. Sin. 59 2679 (in Chinese) [赵 艳、蒋毅坚 2010 59 2679]
[20] Li S T, Cheng P F, Zhao L, Li J Y 2009 Acta Phys.Sin. 58 523 (in Chinese)[李盛涛、成鹏飞、赵 雷、李建英 2009 58 523]
[21] Li S S, Feng X P, Hang J J, Zhang Z, Tao Y Y 2010 Journal of Functional Materials 41 113[李世帅、冯秀鹏、黄金昭、张 仲、陶冶微 2010 功能材料 41 113]
[22] Fu Z X, Guo C X, Lin B X 1998 Chin. Phys. Lett. 15 457
[23] Seung Y B, Hyun C C, Chan W N, Jeunghee P 2005 Appl. Phys. Lett. 86 033102
[24] Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466
[25] Xu J, Huang S P, Wang Z S 2009 Solid State Commun. 149 527
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[1] Fan X M, Lian J S, Guo Z X 2005 Appl. Surf. Sci. 239 176
[2] Zou J, Zhou S M, Xia C T 2005 J. Crys. Grow. 280 185
[3] Huang J Z, Li S S, Feng X P 2010 Acta Phys.Sin. 59 5839 (in Chinese) [黄金昭、李世帅、冯秀鹏 2010 59 5839]
[4] Zhou X, Wang S Q, Lian G J, Xiong G C 2006 Chin. Phys. 15 199
[5] Liu Z W, Gu J F, Fu W J, Sun C W, Li Y, Zhang Q Y 2006 Acta Phys. Sin. 55 5479 (in Chinese) [刘志文、谷建峰、付伟佳、孙成伟、李 勇、张庆瑜 2006 55 5479]
[6] Liu R B, Pan A L, Wang F F, Zou B S 2007 Chin. Phys. 16 1129
[7] Gao L, Zhang J M 2009 Chin. Phys. B 18 4536
[8] Lu S C, Song G L, Xiao Z Y, Zhang J H, Huang S H 2002 Chinese Journal of Luminescence 23 306 (in Chinese) [吕树臣、宋国立、肖芝雁、张家骅、黄世华 2002 发光学报 23 306]
[9] Hao Y 2005 Optoelectronic Technology & Information 18 65 (in Chinese) [郝 云 2005 光电子技术与信息 18 65]
[10] Guo H H, Lin Z H, Feng Z F, Lin L L, Zhou J Z 2009 J. Phys. Chem. C 113 12546
[11] Guo C F, Ding X, Xu Y 2010 Journal of the American Ceramic Society 93 1708
[12] Zhang J M, Zhao D L, Shen Z M 2010 High Performance Ceramics 6 434
[13] Cao Y, Miao L, Tanemura S 2006 J. Appl. Phys. 45 623
[14] Chris G, Vande W 2001 Physica B 308 310
[15] Ravindra S, Mahesh K, Sudhir C 2007 J. Mater. Sci. 42 4675
[16] Kim S, Wan I L, Hwang S K, Chongmu L 2007 J. Mater. Sci. 42 4845
[17] Lyudmila N D, Lyudmila L T U, Yurn M J 2008 Mater. Sci. 43 2143
[18] Lidia A, Gregorio B, Michele P J 2008 Phys. Chem. C 112 4049
[19] Zhao Y, Fu Y J 2010 Acta Phys. Sin. 59 2679 (in Chinese) [赵 艳、蒋毅坚 2010 59 2679]
[20] Li S T, Cheng P F, Zhao L, Li J Y 2009 Acta Phys.Sin. 58 523 (in Chinese)[李盛涛、成鹏飞、赵 雷、李建英 2009 58 523]
[21] Li S S, Feng X P, Hang J J, Zhang Z, Tao Y Y 2010 Journal of Functional Materials 41 113[李世帅、冯秀鹏、黄金昭、张 仲、陶冶微 2010 功能材料 41 113]
[22] Fu Z X, Guo C X, Lin B X 1998 Chin. Phys. Lett. 15 457
[23] Seung Y B, Hyun C C, Chan W N, Jeunghee P 2005 Appl. Phys. Lett. 86 033102
[24] Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466
[25] Xu J, Huang S P, Wang Z S 2009 Solid State Commun. 149 527
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