Current collapse effect, interfacial thermal resistance and work temperature for AlGaN/GaN HEMTs

Gu Jiang; Wang Qiang; Lu Hong

doi:10.7498/aps.60.077107

Abstract

The effects of operating temperature and the interfacial thermal resistance on device are researched by using a two-dimensional numerical simulator. A comparison between the simulated results and the experiment data demonstrates that hot electrons make a significant contribution to the negative differential output conductance which will increase with the increase of the work temperature under low drain voltage, and under upper drain voltage, the self-heating effect is an important factor to the current collapse which will become more serious with the work temperature and interfacial thermal resistance inereasing.

Keywords:

Authors and contacts

(1)Department of Physics and Electronic, Changshu Institute of Technology, Changshu 215500, China; (2)School of Electronics and Information, Nantong University, Nantong 226019, China

References

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[6]	Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) [席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维韩、彦军、罗毅 2008 57 7238]
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[8]	Wang L, Hu W D, Chen X S, Lu W 2010 J. Appl. Phys. 108 054501
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[10]	Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectronics Journal 37 613
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[14]	Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[15]	Wei W, Lin R B, Feng Q, HaoY 2008 Acta Phys. Sin. 57 467(in Chinese)[魏巍、林若兵、冯倩、郝跃 2008 57 467]
[16]	Hao L C, Duan J L, 2010 Acta. Phys. Sin. 59 2746(in Chinese)[郝立超、段俊丽 2010 59 2746]
[17]	Vetury R, Naiqain Zhang Q, Stacia Keller, Mishra K U 2001 IEEE Trans.Electron Devices 48 560
[18]	Kong Y C, Zheng Y D, Zhou C H, Deng Y Z , Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta. Phys. Sin. 53 2320(in Chinese)[孔月婵、郑有窦、周春红、邓永桢、顾书林、沈波、张荣、韩平、江若琏、施毅 2004 53 2320]
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[20]	Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta. Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 58 536]
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[24]	Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Elect. Dev. Lett. 19 89
[25]	Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y, Yang L A 2009 Chin. Phys. B 18 3014
[26]	Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912

Cited By

[1]	Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta. Phys. Sin. 58 0511 (in Chinese) [谷文萍、郝跃、张进城、王冲、冯倩、马晓华 2009 58 511]
[2]	Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3]	Ding G J, Guo L W, Xing Z G, Chen Y, Xu P Q, Jia H Q, Zhou J M, Chen H 2010 Acta Phys. Sin. 59 5724 (in Chinese) [丁国建、郭丽伟、邢志刚、陈耀、徐培强、贾海强、周均铭、陈弘 2010 59 5724]
[4]	Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[5]	Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[6]	Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) [席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维韩、彦军、罗毅 2008 57 7238]
[7]	Simin G, Yang J Z, Koudymov A, Adivarahan V, Yang J, Khan M A 2006 Appl. Phys. Lett. 89 033510
[8]	Wang L, Hu W D, Chen X S, Lu W 2010 J. Appl. Phys. 108 054501
[9]	Wang C, Quan S, Zhang J F, Hao Y, Feng Q, Chen J F 2009 Acta. Phys. Sin. 58 1966 (in Chinese) [王冲、全思、张金凤、郝跃、冯倩、陈军峰 2009 58 1966]
[10]	Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectronics Journal 37 613
[11]	Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Asif K M, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[12]	Wang L, Hu W D, Chen X S, Lu W 2010 Acta. Phys. Sin. 59 5730 (in Chinese)[王林、胡伟达、陈效双、陆卫 2010 59 5730]
[13]	Brag N, Mickevicius R, Gaska R, Shur M S, Asif K M, Simin G 2004 Appl. Phys. Lett. 85 4780
[14]	Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[15]	Wei W, Lin R B, Feng Q, HaoY 2008 Acta Phys. Sin. 57 467(in Chinese)[魏巍、林若兵、冯倩、郝跃 2008 57 467]
[16]	Hao L C, Duan J L, 2010 Acta. Phys. Sin. 59 2746(in Chinese)[郝立超、段俊丽 2010 59 2746]
[17]	Vetury R, Naiqain Zhang Q, Stacia Keller, Mishra K U 2001 IEEE Trans.Electron Devices 48 560
[18]	Kong Y C, Zheng Y D, Zhou C H, Deng Y Z , Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta. Phys. Sin. 53 2320(in Chinese)[孔月婵、郑有窦、周春红、邓永桢、顾书林、沈波、张荣、韩平、江若琏、施毅 2004 53 2320]
[19]	Bykhovski A D, Gaska R, Shur M S 1998 Appl. Phys. Lett. 73 24
[20]	Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta. Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 58 536]
[21]	Yu L S, Ying Q J, Qiao D, Lau S S, Boutros K S, Redwing J M 1998 Appl. Phys. Lett. 73 26
[22]	Valentin O Turina, Alexander A 2006 J. Appl. Phys. 100 054501
[23]	Vitusevich S A, Danylyuk S V, Klein N, Petrychuk M V, Avksentyev A Yu, Sokolov V N, Kochelap V A, Belyaev A E, Tilak V, Smart J, Vertiatchikh A, Eastman L F 2003 Appl. Phys. Lett. 82 748
[24]	Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Elect. Dev. Lett. 19 89
[25]	Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y, Yang L A 2009 Chin. Phys. B 18 3014
[26]	Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912

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Vol. 60, Issue 7 - 2011-04-05

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