Static surface states and bulk traps in AlGaN/GaN HEMT including hot electron and quantum effects

Hao Li-Chao; Duan Jun-Li

doi:10.7498/aps.59.2746

Abstract

The effects of static surface states and bulk traps on output characteristics have been studied. The effects of surface charge and bulk traps on current collapse, saturation current and knee voltage are investigated, and their relationships have been determined. The results show that the increase of the surface charge can exhaust the two-dimensional electron gas, and reduce the current collapse effect and saturation current, inducing the abnormal shift of the knee voltage. At the same time, reducing the bulk traps can alleviate the current collapse effect and increase the saturation current with the slight change of the knee voltage. At low lattice temperature, the hot electron effect and quantum tunneling effect play an important role in the current collapse. By using the hydrodynamics model, possible physical mechanisms are discussed, and an approach is proposed to reduce the effects of the static surface states and bulk traps on the output characteristics.

Keywords:

Authors and contacts

Hao Li-Chao²,
Duan Jun-Li¹

(1)上海交通大学医学院附属新华医院，上海 200240; (2)同济大学物理学院，上海 200092

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Cited By

[1]	［1］Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) ［谷文萍、郝跃、张进城、王冲、冯倩、马晓华 2009 58 511］
[2]	［2］Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3]	［3］Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lü L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013 (in Chinese) ［周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕力、刘建、刘新宇、贾海强、陈弘、周均铭 2007 56 6013］
[4]	［4］Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[5]	［5］Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[6]	［6］Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W H， Yan J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) ［席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维韩、彦军、罗毅 2008 57 7238］
[7]	［7］Simin G, Yang J Z, Koudymov A, Adivarahan V, Yang J, Khan M A 2006 Appl. Phys. Lett. 89 033510
[8]	［8］Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectron. J. 37 613
[9]	［9］Xia C S, Hu W D, Wang C, Li Z F, Chen X S, Lu W, Simon Li Z M, Li Z Q 2006 Opt. Quant. Electron. 38 1077
[10]	］Wang C, Quan S, Zhang J F, Hao Y, Feng Q, Chen J F 2009 Acta Phys. Sin. 58 1966 (in Chinese) ［王冲、全思、张金凤、郝跃、冯倩、陈军峰 2009 58 1966］
[11]	］Qiao H, Liao Y, Hu W D, Deng Y, Yuan Y G, Zhang Q Y, Li X Y, Gong H M 2008 Acta Phys. Sin. 57 7088 (in Chinese) ［乔辉、廖毅、胡伟达、邓屹、袁永刚、张勤耀、李向阳、龚海梅 2008 57 7088］
[12]	］Yin F, Hu W D, Quan Z J, Zhang B, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7884(in Chinese) ［殷菲、胡伟达、全知觉、张波、胡晓宁、李志锋、陈效双、陆卫 2009 58 7884］
[13]	］Hu W D, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) ［胡伟达、殷菲、叶振华、全知觉、胡晓宁、李志锋、陈效双、陆卫 2009 58 7891］
[14]	］Hu W D, Chen X S, Yin F, Quan Z J, Ye Z H, Hu X N, Li Z F, Lu W 2009 J. Appl. Phys. 105 104502
[15]	］Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Asif K M, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[16]	］Hasegawa H, Inagaki T, Ootomo S 2003 J. Vac. Sci. Technol. 21 1844
[17]	］Meneghesso G, Verzellesi G, Pierobon R, Rampazzo F, Chini A, Mishra U K, Canali C, Zanoni E 2004 IEEE Trans. Electron Devices 51 1554
[18]	］Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) ［冯倩、郝跃、岳远征 2008 57 1886］
[19]	］Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[20]	］Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) ［谷文萍、张进城、王冲、冯倩、马晓华、郝跃 2009 58 1161］
[21]	］Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta Phys. Sin. 58 536 (in Chinese) ［刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 58 536］
[22]	］Gaska R, Bykhovski A D, Shur M S 1998 Appl. Phys. Lett. 73 3577
[23]	］Li Z F, Lu W, Shen S C, Holland S, Hu C M, Heitmann D, Shen B, Zhang Y D 2002 Appl. Phys. Lett. 80 431
[24]	］Faraclas E W, Anwar A F M 2006 Solid-State Electron. 50 1051
[25]	］Wells A M, Uren M J, Balmer R S, Hilton K P, Martin T, Missous M 2005 Solid-State Electron. 49 279
[26]	］Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 0467 (in Chinese) ［魏巍、林若兵、冯倩、郝跃 2008 57 0467］
[27]	］Hu W D, Chen X S, Quan Z J, Zhou X C, Lu W 2006 J. Infrared Millim. Waves 25 90 (in Chinese) ［胡伟达、陈效双、全知觉、周旭昌、陆卫 2006 红外与毫米波学报 58 90］
[28]	］Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Electr. Device Lett. 19 89

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Vol. 59, Issue 4 - 2010-02-20

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