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In this paper, the electron transports through a three-barrier nanowire heterostructure between two reservoirs with different temperatures and chemical potentials are studied. The transport probability of electron is obtained by using the transfer matrix method,and the heat flow carried by the electrons transfer is calculated out. The performance characteristic curves of the refrigerator are plotted by numerical calculations. The influence of bias voltage and heterostructure on the performance of the refrigerator is analyzed. Especially, the effects of the height and the width of the middle barrier on transport probability, cooling rate, and colling coefficient are emphasized.
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Keywords:
- electron refrigerator /
- three-barriers nanowire /
- performance parameters /
- transfer matrix method
[1] Shakouri A, Bowers J E 1997 Appl. Phys. Lett. 71 1234
[2] Mahan G D, Woods L M 1998 Phys. Rev. Lett. 80 4016
[3] Mahan G D, Sofo J O, Bartkowiak M 1998 J. Appl. Phys. 83 4683
[4] Humphrey T E, Newbury R, Taylor R P, Linke H 2002 Phys. Rev. Lett. 89 116801
[5] Humphrey T E, Linke H 2005 Phys. Rev. Lett. 94 096601
[6] Humphrey T E, Linke H, Newbury R 2001 Physica E 11 281
[7] ODwyer M F, Humphrey T E, Linke H 2006 Nanotchnology 17 S338
[8] ODwyer M F, Lewis R A, Zhang C 2005 Phys. Rev. B 72 205330
[9] ODwyer M F, Humphrey T E, Lewis R A, Zhang C 2006 J. Phys. D:Appl. Phys. 39 4153
[10] ODwyer M F, Lewis R A, Zhang C 2007 J. Phys. D:Appl. Phys. 40 1167
[11] Wang X M, He J Z, Tang W 2009 Chin. Phys. B 18 984
[12] He J Z, Wang X M, Liang H N 2009 Physica Scripta 80 035701
[13] He J Z, He B X 2010 Acta. Phys. Sin. 59 2345 (in Chinese) [何济洲、贺兵香 2010 59 2345]
[14] He B X, He J Z 2010 Acta. Phys. Sin. 59 101 (in Chinese) [贺兵香、何济洲 2010 59 101]
[15] Poudel B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang D, Muto A, Vashaee D, Chen X, Liu J, Dresselhaus M D, Chen G, Ren Z 2008 Science 320 634
[16] Hochbaum A I, Chen R, Delgado R D, Liang W, Garnett E C, Najarian M, Majumdar A, Yang P 2008 Nature 451 163
[17] Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta. Phys. Sin. 57 5197 (in Chinese) [张轶群、施 毅、濮 林、张 荣、郑 有 2008 57 5197]
[18] Mu W D, Cheng H F, Chen Z H, Tang G P, Wu Z Q 2009 Acta. Phys. Sin. 58 1212 (in Chinese) [穆武第、程海峰、陈朝辉、唐耿平、吴志桥 2009 58 1212]
[19] Pichanusakorn P, Bandaru P 2010 Materials Science & Engineering R 67 19
[20] Miyamoto K, Yamamoto H 1998 J. Appl. Phys. 84 311
[21] Krishnamurthy S, Chen A B, Sher A 1998 J. Appl. Phys. 84 5037
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[1] Shakouri A, Bowers J E 1997 Appl. Phys. Lett. 71 1234
[2] Mahan G D, Woods L M 1998 Phys. Rev. Lett. 80 4016
[3] Mahan G D, Sofo J O, Bartkowiak M 1998 J. Appl. Phys. 83 4683
[4] Humphrey T E, Newbury R, Taylor R P, Linke H 2002 Phys. Rev. Lett. 89 116801
[5] Humphrey T E, Linke H 2005 Phys. Rev. Lett. 94 096601
[6] Humphrey T E, Linke H, Newbury R 2001 Physica E 11 281
[7] ODwyer M F, Humphrey T E, Linke H 2006 Nanotchnology 17 S338
[8] ODwyer M F, Lewis R A, Zhang C 2005 Phys. Rev. B 72 205330
[9] ODwyer M F, Humphrey T E, Lewis R A, Zhang C 2006 J. Phys. D:Appl. Phys. 39 4153
[10] ODwyer M F, Lewis R A, Zhang C 2007 J. Phys. D:Appl. Phys. 40 1167
[11] Wang X M, He J Z, Tang W 2009 Chin. Phys. B 18 984
[12] He J Z, Wang X M, Liang H N 2009 Physica Scripta 80 035701
[13] He J Z, He B X 2010 Acta. Phys. Sin. 59 2345 (in Chinese) [何济洲、贺兵香 2010 59 2345]
[14] He B X, He J Z 2010 Acta. Phys. Sin. 59 101 (in Chinese) [贺兵香、何济洲 2010 59 101]
[15] Poudel B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang D, Muto A, Vashaee D, Chen X, Liu J, Dresselhaus M D, Chen G, Ren Z 2008 Science 320 634
[16] Hochbaum A I, Chen R, Delgado R D, Liang W, Garnett E C, Najarian M, Majumdar A, Yang P 2008 Nature 451 163
[17] Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta. Phys. Sin. 57 5197 (in Chinese) [张轶群、施 毅、濮 林、张 荣、郑 有 2008 57 5197]
[18] Mu W D, Cheng H F, Chen Z H, Tang G P, Wu Z Q 2009 Acta. Phys. Sin. 58 1212 (in Chinese) [穆武第、程海峰、陈朝辉、唐耿平、吴志桥 2009 58 1212]
[19] Pichanusakorn P, Bandaru P 2010 Materials Science & Engineering R 67 19
[20] Miyamoto K, Yamamoto H 1998 J. Appl. Phys. 84 311
[21] Krishnamurthy S, Chen A B, Sher A 1998 J. Appl. Phys. 84 5037
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