Ballistic phonon transport and thermal conductance in multi-channel quantum structure at low temperatures

Ye Fu-Qiu; Li Ke-Min; Peng Xiao-Fang

doi:10.7498/aps.60.036806

Abstract

By using the elastic approximation model and scattering matrix method, we investigated the acoustic phonons transport and thermal conductance in a H-branch four-channel nanostructure. The calculated results show that, for the incident acoustic phonons of low frequency, as long as the transverse width of each channel is equal, the transmission coefficient of mode 0 in each channel almost equals 0.25 and receives no influence from the changes of the other structure parameters. But for the incident acoustic phonons of high frequency, the transmission coefficient of mode 0 in each channel is very sensitive to the structure parameters and there is bigger difference corresponding to the transmission coefficients of different channels. When the temperature is very low, the thermal conductance in each channel is about 1 4 π2k2BT/(3h). With the increase of temperature, the thermal conductance of each channel changes to different degrees. By changing the length of scattering region or the transverse width of each channel, we can control the separating degree of modes and the thermal conductance of each channel efficiently and realize acoustic phonon selective transport and thermal conduction.

Keywords:

Authors and contacts

1.
College of Physics and Microelctronics Science, Hunan University, Changsha 410082, China

References

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[35]	Li K M, Wang L L, Huang W Q, Zou B S, Wan Q 2009 J. Appl. Phys. 105 104515
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[41]	Huang W Q, Chen K Q, Shuai Z, Wang L L, Hu W Y, Zou B S 2005 J. Appl. Phys. 98 093524
[42]	Tang L M, Wang L L, Chen K Q, Huang W Q, Zou B S 2006 Appl. Phys. Lett. 88 163505
[43]	Yang P, Sun Q F, Guo H, Hu B B 2007 Phys. Rev. B 75 235319
[44]	Li K M, Wang L L, Huang W Q, Zou B S, Wan Q 2009 Phys. Lett. A 372 5816
[45]	Zhou L P, Wang M P, Zhu J J, Peng X F, Chen K Q 2009 J. Appl. Phys. 105 114318
[46]	Sun Q, Yang P, Guo H 2002 Phys. Rev. Lett. 89 175901
[47]	Xie F, Chen K Q, Wang Y G, Zhang Z H 2008 J. Appl. Phys. 104 054312
[48]	Wang J S, Wang J, Lu J T, 2008 Eur. Phys. J. B 62 381
[49]	Cross M C, Lifshitz R 2001 Phys. Rev. B 64 85324
[50]	Graff K F 1975 Wave Motion in Elastic Solids (Clarendon, Oxford)
[51]	Li W X, Chen K Q, Duan W H, Wu J, Gu B L 2003 J. Phys. D: Appl. Phys. 36 3027
[52]	Leng M, Lent C S 1993 Phys. Rev. Lett. 71 137 Leng M, Lent C S 1994 Phys. Rev. B 50 10823
[53]	Xu H Q 1995 Phys. Rev. B 52 5803 Xu H Q 2002 Appl. Phys. Lett. 80 853
[54]	Sheng W D 1997 J. Phys.: Condens Matter 9 8369
[55]	Madelung O 1982 Semiconductors: Group Ⅳ Elements and Ⅲ—Ⅴ Compounds (Springer, Berlin)

Cited By

[1]	Wees B J, Houten H, Beenakker C W J, Williamson J G, Kouwenhoven L P, Marel D, Foxon C T 1988 Phys. Rev. Lett. 60 848
[2]	Wang X H, Gu B Y, Yang G Z 1998 Phys. Rev. B 58 4629
[3]	Chen K Q, Gu B Y, Lin Y K, Chuu D S 1999 Int. J. Mod. Phys. B 13 903
[4]	Chen K Q, Wang X H, Gu B Y 2000 Phys. Rev. B 61 12075
[5]	Xu H Q 2002 Phys. Rev. B 66 165305
[6]	Xia J B, Li S S 2003 Phys. Rev. B 68 75310
[7]	Zhu J L, Dai Z S, Hu X 2003 Phys. Rev. B 68 45324
[8]	Huang W Q, Chen K Q, Shuai Z G, Wang L L, Hu W Y 2004 Acta Phys . Sin. 53 2330 (in Chinese) [黄维清、陈克求、帅志刚、王玲玲、胡望宇 2004 53 2330 ]
[9]	Chen J W, Yang L F 2005 Acta Phys . Sin. 54 2183 (in Chinese) [陈将伟, 杨林峰 2005 54 2183 ]
[10]	Wang X J, Wang L L, Huang W Q, Tang L M, Chen K Q 2006 Acta Phys . Sin. 55 3649 (in Chinese) [王新军、王玲玲、黄维清、唐黎明、陈克求2006 55 3649 ]
[11]	Zheng Y Z, Qi C H, Ding X D, Lee W Z 2006 Acta Phys . Sin. 55 294 (in Chinese) [郑永真、齐昌炜、丁玄同、郦文忠 2006 55 294 ]
[12]	Xia C J, Fang C F, Hu G C, Li D M, Liu D S, Xie S J 2007 Acta Phys . Sin. 56 4884 (in Chinese) [夏蔡娟、房常峰、胡贵超、李冬梅、刘德胜、解士杰 2007 56 4884 ]
[13]	Tang L M, Wnag L L, Wang N, Yan M 2008 Acta Phys . Sin. 57 3203 (in Chinese) [唐黎明、王玲玲、王宁、严敏 2008 57 3203 ]
[14]	Niu X M, Qi Y H 2008 Acta Phys . Sin. 57 6926 (in Chinese) [牛秀明、齐元华 2008 57 6926 ]
[15]	Jin L, Zhu L, Li L, Xie Z W 2009 Acta Phys . Sin. 58 8577 (in Chinese) [金莲、朱林、李玲、谢征微 2009 58 8577 ]
[16]	Wang L G, Zhang H Y, Wang C, Terence K S W 2010 Acta Phys . Sin. 59 536 (in Chinese) [王利光、张鸿宇、王畅、 Terence K S W 2010 59 536 ]
[17]	An Y P, Yang C L, Wang M S, Ma X G, Wang D H 2010 Acta Phys. Sin. 59 2010 (in Chinese) [安义鹏、杨传路、王美山、马晓光、王德华2010 59 2010 ]
[18]	Rego L G C, Kirczenow G 1998 Phys. Rev. Lett. 81 232
[19]	Rego L G C, Kirczenow G 1999 Phys. Rev. B 59 13080
[20]	Schwab K, Henriksen E A, Norlock J M, Roukes M L 2000 Nature (London) 404 974
[21]	Chiatti O, Nicholls J T, Proskuryakov Y Y, Lumpkin N, Farrer I, Ritchie D A 2006 Phys. Rev. Lett. 97 056601
[22]	Meschke M, Guichard W, Pekola J P 2006 Nature(London) 444 187
[23]	Volz S G, Chen Gang 1999 Appl. Phys. Lett. 75 2056
[24]	Wu G, Dong J 2005 Phys. Rev. B 71 115410
[25]	Bao W X, Zhu C C 2006 Acta Phys . Sin. 55 3552 (in Chinese) [保文星、朱长纯 2006 55 3552 ]
[26]	Li S B, Wu Z M, Yuan K, Liao N M, Li W, Jiang Y D 2008 Acta Phys . Sin. 57 3126 (in Chinese) [李世彬、吴志明、袁凯、廖乃镘、李伟、蒋亚东 2008 57 3126 ]
[27]	Xu Y, Chen X, Gu B L, Duan W 2009 Appl. Phys. Lett. 95 233116
[28]	Wang J S, Li B 2004 Phys. Rev. Lett. 92 74302
[29]	Cross M C, Lifshitz R 2001 Phys. Rev. B 64 85324
[30]	Huang W Q, Chen K Q, Shuai Z, Wang L, Hu W 2005 Phys. Lett. A 336 245
[31]	Peng X F, Chen K Q, Zou B S, Zhang Y 2007 Appl. Phys. Lett. 90 193502
[32]	Tang L M, Wang Y, Wang D, Wang L L 2007 Acta Phys . Sin. 56 437 (in Chinese) [唐黎明、王艳、王丹、王玲玲 2007 56 437 ]
[33]	Xie F, Chen K Q, Wang Y G, Zhang Y 2008 J. Appl. Phys. 103 084501;104, 054312
[34]	Yao L J, Wang L L 2008 Acta Phys . Sin. 57 3100 (in Chinese) [姚凌江、王玲玲 2008 57 3100 ]
[35]	Li K M, Wang L L, Huang W Q, Zou B S, Wan Q 2009 J. Appl. Phys. 105 104515
[36]	PengX F, Chen K Q 2010 Physica E doi:10.1016/j.physe.2010.02.022
[37]	Santamore D H, Cross M C 2001 Phys. Rev. Lett. 87 115502
[38]	Santamore D H, Cross M C 2001 Phys. Rev. B 63 184306
[39]	Chen K Q, Li W X, Duan W H, Shuai Z, Gu B L 2005 Phys. Rev. B 72 045422
[40]	Li W X, Chen K Q, Duan W H, Wu J, Gu B L 2004 J. Phys.: Condens. Matter 16 5049
[41]	Huang W Q, Chen K Q, Shuai Z, Wang L L, Hu W Y, Zou B S 2005 J. Appl. Phys. 98 093524
[42]	Tang L M, Wang L L, Chen K Q, Huang W Q, Zou B S 2006 Appl. Phys. Lett. 88 163505
[43]	Yang P, Sun Q F, Guo H, Hu B B 2007 Phys. Rev. B 75 235319
[44]	Li K M, Wang L L, Huang W Q, Zou B S, Wan Q 2009 Phys. Lett. A 372 5816
[45]	Zhou L P, Wang M P, Zhu J J, Peng X F, Chen K Q 2009 J. Appl. Phys. 105 114318
[46]	Sun Q, Yang P, Guo H 2002 Phys. Rev. Lett. 89 175901
[47]	Xie F, Chen K Q, Wang Y G, Zhang Z H 2008 J. Appl. Phys. 104 054312
[48]	Wang J S, Wang J, Lu J T, 2008 Eur. Phys. J. B 62 381
[49]	Cross M C, Lifshitz R 2001 Phys. Rev. B 64 85324
[50]	Graff K F 1975 Wave Motion in Elastic Solids (Clarendon, Oxford)
[51]	Li W X, Chen K Q, Duan W H, Wu J, Gu B L 2003 J. Phys. D: Appl. Phys. 36 3027
[52]	Leng M, Lent C S 1993 Phys. Rev. Lett. 71 137 Leng M, Lent C S 1994 Phys. Rev. B 50 10823
[53]	Xu H Q 1995 Phys. Rev. B 52 5803 Xu H Q 2002 Appl. Phys. Lett. 80 853
[54]	Sheng W D 1997 J. Phys.: Condens Matter 9 8369
[55]	Madelung O 1982 Semiconductors: Group Ⅳ Elements and Ⅲ—Ⅴ Compounds (Springer, Berlin)

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Vol. 60, Issue 3 - 2011-02-05

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