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Based on the analysis of ferromagnetic mechanism of diluted magnetic semiconductors (DMSs), an Ising model with multi-exchange interactions is established. The reason of the shape of ferromagnetic order is simulated by Monte Carlo (MC) simulation with the Metropolis algorithm. The result reveals that the lower concentrations of Mn doping (x) are helpful for forming the ferromagnetic order. However, with the lower concentrations of Mn doping the magnetization of the system will be smaller and the Courier temperature will be lower. The modifying efect of carrier on the formation of ferromagnetism is enhanced with the increase of x and the decrease of the anisotropy constant (K). This work predicts that the increase of K will heighten the ferromagnetism and the Courier temperature.
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Keywords:
- diluted magnetic semiconductors /
- Zn1-xMnxO nanofilm /
- Ising multilayer /
- Monte Carlo simulation
[1] Yan G Q, Xie K X, Mo Z R, Lu Z L, Zou W Q, Wang S, Yue F J, Wu D, Zhang F M, Du Y W 2009 Acta Phys. Sin. 58 1237 (in Chinese) [严国清、谢凯旋、莫仲荣、路忠林、邹文琴、王 申、岳凤娟、吴 镝、张凤鸣、都有为 2009 58 1237]
[2] Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707 (in Chinese) [陈 静、金国钧、马余强 2009 58 2707]
[3] Dietl T, Ohno H, Mstukura F, Ciber J, Ferand D 2000 Science 287 1019
[4] Peng Y Z, Thomas L, Song W D, Chong T C 2009 Chin. Phys. B 18 5501
[5] Sharma V K, Xalxo R, Varma G D 2007 Cryst. Res. Technol. 42 34
[6] Zheng R K, Liu H, Zhang X X 2004 Appl. Phys. Let. 85 2589
[7] Lawes G, Risbud A S, Ramirez A P, Seshadri R 2005 Phys. Rev. B 71 045201
[8] Kimd H, Yang J S, Leek W 2003 Appl. Phys. Lett. 81 2421
[9] Kim Y M, Yoon M, Park I W 2004 Solid State Commun. 129 175
[10] Wang Y, Sun L, Han D D, Liu L F, Kang J F, Liu X Y, Zhang X, Han R Q 2006 Acta Phys. Sin. 55 6651 (in Chinese) [王 漪、孙 雷、韩德栋、刘力锋、康晋锋、刘晓彦、张 兴、韩汝琦 2006 55 6651]
[11] Chamber S A, Droubay T, Wang C M, Lea A S, Farrow R F C, Folks L, Deline V, Anders S 2003 Appl. Phys. Lett. 82 1257
[12] Céspedes E, Castro G R, Jiménez-Villacorta F, Andrés A D, Prieto C 2008 Phys. Condens. Matter 20 095207 (9pp)
[13] Yu Z, Li X, Long X, Cheng X W,Wang J Y, Liu Y, Gao M S, Wang F C 2008 Acta Phys. Sin. 57 4539 (in Chinese) [于 宙、李 祥、龙 雪、程兴旺、王晶云、刘 颖、曹茂盛、王富耻 2008 57 4539]
[14] Anderson P W 1950 Phys. Rev. 79 350Anderson P W 1958 Phys. Rev. 109 730
[15] Zener C 1951 Phys. Rev. 81 440
[16] García M A, Ruiz-Gonza lez M L, Quesada A, Costa-Krmer J L, Fernndez J F, Khatib S J, Wennberg A, Caballero A C, Martín-Gonzlez M S, Villegas M, Briones F, Gonzlez-Calbet J M, Hernando A 2005 Phys. Rev. Lett. 94 217206
[17] Coey J M D, Venkatesan M, Fitzgerald C B 2005 Nat. Mater. 4 173
[18] Egger R, Schoeller H 1996 Czech. J. Phys. 46 (Suppl 4) 1909
[19] Kittilstved K R, Norberg S N, Gamelin R D 2005 Phys. Rev. Lett. 94 147209
[20] Heo Y W, Ivill M P, Ip K, Norton D P, Peartona S J 2004 Phys. Rev. Lett. 84 2292
[21] Ivill M, Pearton S J, Nortona D P, Kelly J, Hebard A F 2005 Appl. Phys. 97 053904
[22] Erhan A, Ali Y 2009 Chin. Phys. B 18 4193
[23] Luo Z Hu, Loan M, Liu Y, Lin J R 2009 Chin. Phys. B 18 2696
[24] Wang Z F, Chen L 2009 Chin. Phys. B 18 2048
[25] Zaim A, Amraoui Y EL, Kerouad M, Arhchoui H 2008 Magn. Magn. Mater. 320 1030
[26] Tomasz M R 1996 Phys. Rev. B 53 12577
[27] Balcerzak T A 2007 Magn. Magn. Mater. 310 1651
[28] Twardowski A 1991 Phys. Scri. T 39 124
[29] Ye Z Z, Lv J G, Zhang Y Z, He H P 2009 ZnO: Doping and Application (Hangzhou: Zhejiang University Press) p 48 (in Chinese) [叶志镇、吕建国、张银珠、何海平 2009 氧化锌半导体材料掺杂技术与应用 (杭州: 浙江大学出版社) 第48页]
[30] Li Z Z 2002 Solid State Theory (Volume 2) (Beijing: High Education Press) p511 (in Chinese) [李正中 2002 固体理论 (北京: 高等教育出版社) 第511页]
[31] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (Volume 1) (Xian: Xian Jiao Tong University Press) p100—103 (in Chinese) [刘恩科、朱秉升、罗晋生 1998 半导体物理学(西安:西安交通大学出版社)第100—103页]
[32] Xu H Y, Lin Y C, Xu C S, Liu Y X, Shao C L, Mu R 2006 Appl. Phys. Lett. 88 242502
[33] Griffin K A, Parkhomov A B, Wang C M 2005 Phys. Rev. Lett. 94 157204
[34] Ramachandran S, Narayan J, Prater J T 2006 Appl. Phys. Lett. 88 242503
[35] Hsu H S, Huang C A 2006 Appl. Phys. Lett. 88 242507
[36] Kittilstved K R 2006 Phys. Rev. Lett. 97 037203
[37] Ivill M, Pearton S J, Heo Y W, Kelly J, Hebard A F, Norton D P 2007 Appl. Phys. 101 123909
-
[1] Yan G Q, Xie K X, Mo Z R, Lu Z L, Zou W Q, Wang S, Yue F J, Wu D, Zhang F M, Du Y W 2009 Acta Phys. Sin. 58 1237 (in Chinese) [严国清、谢凯旋、莫仲荣、路忠林、邹文琴、王 申、岳凤娟、吴 镝、张凤鸣、都有为 2009 58 1237]
[2] Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707 (in Chinese) [陈 静、金国钧、马余强 2009 58 2707]
[3] Dietl T, Ohno H, Mstukura F, Ciber J, Ferand D 2000 Science 287 1019
[4] Peng Y Z, Thomas L, Song W D, Chong T C 2009 Chin. Phys. B 18 5501
[5] Sharma V K, Xalxo R, Varma G D 2007 Cryst. Res. Technol. 42 34
[6] Zheng R K, Liu H, Zhang X X 2004 Appl. Phys. Let. 85 2589
[7] Lawes G, Risbud A S, Ramirez A P, Seshadri R 2005 Phys. Rev. B 71 045201
[8] Kimd H, Yang J S, Leek W 2003 Appl. Phys. Lett. 81 2421
[9] Kim Y M, Yoon M, Park I W 2004 Solid State Commun. 129 175
[10] Wang Y, Sun L, Han D D, Liu L F, Kang J F, Liu X Y, Zhang X, Han R Q 2006 Acta Phys. Sin. 55 6651 (in Chinese) [王 漪、孙 雷、韩德栋、刘力锋、康晋锋、刘晓彦、张 兴、韩汝琦 2006 55 6651]
[11] Chamber S A, Droubay T, Wang C M, Lea A S, Farrow R F C, Folks L, Deline V, Anders S 2003 Appl. Phys. Lett. 82 1257
[12] Céspedes E, Castro G R, Jiménez-Villacorta F, Andrés A D, Prieto C 2008 Phys. Condens. Matter 20 095207 (9pp)
[13] Yu Z, Li X, Long X, Cheng X W,Wang J Y, Liu Y, Gao M S, Wang F C 2008 Acta Phys. Sin. 57 4539 (in Chinese) [于 宙、李 祥、龙 雪、程兴旺、王晶云、刘 颖、曹茂盛、王富耻 2008 57 4539]
[14] Anderson P W 1950 Phys. Rev. 79 350Anderson P W 1958 Phys. Rev. 109 730
[15] Zener C 1951 Phys. Rev. 81 440
[16] García M A, Ruiz-Gonza lez M L, Quesada A, Costa-Krmer J L, Fernndez J F, Khatib S J, Wennberg A, Caballero A C, Martín-Gonzlez M S, Villegas M, Briones F, Gonzlez-Calbet J M, Hernando A 2005 Phys. Rev. Lett. 94 217206
[17] Coey J M D, Venkatesan M, Fitzgerald C B 2005 Nat. Mater. 4 173
[18] Egger R, Schoeller H 1996 Czech. J. Phys. 46 (Suppl 4) 1909
[19] Kittilstved K R, Norberg S N, Gamelin R D 2005 Phys. Rev. Lett. 94 147209
[20] Heo Y W, Ivill M P, Ip K, Norton D P, Peartona S J 2004 Phys. Rev. Lett. 84 2292
[21] Ivill M, Pearton S J, Nortona D P, Kelly J, Hebard A F 2005 Appl. Phys. 97 053904
[22] Erhan A, Ali Y 2009 Chin. Phys. B 18 4193
[23] Luo Z Hu, Loan M, Liu Y, Lin J R 2009 Chin. Phys. B 18 2696
[24] Wang Z F, Chen L 2009 Chin. Phys. B 18 2048
[25] Zaim A, Amraoui Y EL, Kerouad M, Arhchoui H 2008 Magn. Magn. Mater. 320 1030
[26] Tomasz M R 1996 Phys. Rev. B 53 12577
[27] Balcerzak T A 2007 Magn. Magn. Mater. 310 1651
[28] Twardowski A 1991 Phys. Scri. T 39 124
[29] Ye Z Z, Lv J G, Zhang Y Z, He H P 2009 ZnO: Doping and Application (Hangzhou: Zhejiang University Press) p 48 (in Chinese) [叶志镇、吕建国、张银珠、何海平 2009 氧化锌半导体材料掺杂技术与应用 (杭州: 浙江大学出版社) 第48页]
[30] Li Z Z 2002 Solid State Theory (Volume 2) (Beijing: High Education Press) p511 (in Chinese) [李正中 2002 固体理论 (北京: 高等教育出版社) 第511页]
[31] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (Volume 1) (Xian: Xian Jiao Tong University Press) p100—103 (in Chinese) [刘恩科、朱秉升、罗晋生 1998 半导体物理学(西安:西安交通大学出版社)第100—103页]
[32] Xu H Y, Lin Y C, Xu C S, Liu Y X, Shao C L, Mu R 2006 Appl. Phys. Lett. 88 242502
[33] Griffin K A, Parkhomov A B, Wang C M 2005 Phys. Rev. Lett. 94 157204
[34] Ramachandran S, Narayan J, Prater J T 2006 Appl. Phys. Lett. 88 242503
[35] Hsu H S, Huang C A 2006 Appl. Phys. Lett. 88 242507
[36] Kittilstved K R 2006 Phys. Rev. Lett. 97 037203
[37] Ivill M, Pearton S J, Heo Y W, Kelly J, Hebard A F, Norton D P 2007 Appl. Phys. 101 123909
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