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The low-energy bombardments of noble metal atoms (Ni, Pd, Pt, Cu, Ag, Au) on Pt (111) surface are studied by molecular dynamics (MD) simulations. The atomic interaction potential with embedded atom is used in the simulation. The incident-energy effects on adatom yields, sputtering yields, and vacancy yields for different projectiles have been observed and summarized. When the incident energy Ein varies from 0.1 to 200 eV, surface atoms transfer layer by layer and the incident energy dependent transition occurs when the incident energy values are about 5 and 70 eV. When the incident energy is lower than 5 eV, projetiles are deposited as adatom and the value of defect yield is 0. While 70 eV > Ein > 5 eV, no atoms can be implanted into the depth beyond the second layer and the vacancy yield in the third layer is about 0. For the case of Ein > 70 eV, deposited atoms enter into the third layer. And then, vacancy occurs. Furthermore, defect yield sharply increases with the increase of incident energy. Based on the result of our MD simulations, a guide to the choice of optimum deposition parameters is suggested.
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Keywords:
- low-energy deposition /
- adatom /
- vacancy /
- molecular dynamics simulation
[1] Colligon J S 1995 J. Vac. Sci. Technol. A 13 1649
[2] Harrison J D E, Webb R P 1983 Nucl. Instrum. Meth. B 213 727
[3] Webb R P, Harrison J D E 1983 Nucl. Instrum. Meth. B 213 697
[4] Michely T, Comsa G 1991 Phys. Rev. B 44 8411
[5] Michely T, Teichert C 1994 Phys. Rev. B 50 11156
[6] Karetta F, Urbassek H M 1992 J. Appl. Phys. 71 5410
[7] Kai H, Li Y C, Guo D C, Li S, Li Z J 2009 Acta Phys. Sin. 58 4888 (in Chinese) [开 花、李运超、郭德成、李 双、李之杰 2009 58 4888]
[8] Zhang C, Lü H F, Zhang Q Y 2002 Acta Phys. Sin. 51 2329 (in Chinese) [张 超、吕海峰、张庆瑜 2002 51 2329]
[9] Yan C, Lü H F, Zhang C, Zhang Q Y 2006 Acta Phys. Sin. 55 1351 (in Chinese) [颜 超、吕海峰、张 超、张庆瑜 2006 物 理学报 55 1351] 〖10] Zhang C, Yan C, Tang X, Wang Y L, Zhang Q Y 2007 Surf. Coat. Techn. 201 8408
[10] Yan C, Zhang C, Zhang Q Y 2009 Appl. Surf. Sci. 255 3875
[11] Liu M L, Zhang Z N, Li W, Zhao Q, Qi Y, Zhang L 2009 Acta Phys. Sin. 58 S199 (in Chinese) [刘美林、张宗宁、李 蔚、赵 骞、祁 阳、张 林 2009 58 S199]
[12] Daw M S, Baskes M I 1984 Phys. Rev. B 29 6443
[13] Foiles S M, Baskes M I, Daw M S 1986 Phys. Rev. B 33 7983
[14] Swope W C, Andersen H C, Berens P H, Wilson K R 1982 J. Chem. Phys. 76 637
[15] Andersen H H, Bay H L 1981 Sputtering by Particle Bombardment 1: Physical Sputtering of Single Element Solids (New York: Springer-Verlag)p145
[16] Li Y G, DePristo A E 1996 Surf. Sci. 351 189
[17] Webb R P, Harrison J D E 1983 Radiat. Eff. Lett. 86 15
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[1] Colligon J S 1995 J. Vac. Sci. Technol. A 13 1649
[2] Harrison J D E, Webb R P 1983 Nucl. Instrum. Meth. B 213 727
[3] Webb R P, Harrison J D E 1983 Nucl. Instrum. Meth. B 213 697
[4] Michely T, Comsa G 1991 Phys. Rev. B 44 8411
[5] Michely T, Teichert C 1994 Phys. Rev. B 50 11156
[6] Karetta F, Urbassek H M 1992 J. Appl. Phys. 71 5410
[7] Kai H, Li Y C, Guo D C, Li S, Li Z J 2009 Acta Phys. Sin. 58 4888 (in Chinese) [开 花、李运超、郭德成、李 双、李之杰 2009 58 4888]
[8] Zhang C, Lü H F, Zhang Q Y 2002 Acta Phys. Sin. 51 2329 (in Chinese) [张 超、吕海峰、张庆瑜 2002 51 2329]
[9] Yan C, Lü H F, Zhang C, Zhang Q Y 2006 Acta Phys. Sin. 55 1351 (in Chinese) [颜 超、吕海峰、张 超、张庆瑜 2006 物 理学报 55 1351] 〖10] Zhang C, Yan C, Tang X, Wang Y L, Zhang Q Y 2007 Surf. Coat. Techn. 201 8408
[10] Yan C, Zhang C, Zhang Q Y 2009 Appl. Surf. Sci. 255 3875
[11] Liu M L, Zhang Z N, Li W, Zhao Q, Qi Y, Zhang L 2009 Acta Phys. Sin. 58 S199 (in Chinese) [刘美林、张宗宁、李 蔚、赵 骞、祁 阳、张 林 2009 58 S199]
[12] Daw M S, Baskes M I 1984 Phys. Rev. B 29 6443
[13] Foiles S M, Baskes M I, Daw M S 1986 Phys. Rev. B 33 7983
[14] Swope W C, Andersen H C, Berens P H, Wilson K R 1982 J. Chem. Phys. 76 637
[15] Andersen H H, Bay H L 1981 Sputtering by Particle Bombardment 1: Physical Sputtering of Single Element Solids (New York: Springer-Verlag)p145
[16] Li Y G, DePristo A E 1996 Surf. Sci. 351 189
[17] Webb R P, Harrison J D E 1983 Radiat. Eff. Lett. 86 15
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