Ni原子倾斜轰击Pt(111)表面低能溅射现象的分子动力学模拟

颜超; 段军红; 何兴道

doi:10.7498/aps.60.088301

摘要

采用嵌入原子方法的原子间相互作用势,通过分子动力学模拟详细研究了以不同角度入射的低能Ni原子与Pt (111)基体表面相互作用过程中的低能溅射行为.结果表明:随着入射角度从0增加到80,溅射产额Ys和入射原子钉扎系数S的变化均可以根据入射角近似地分为以下三个区域:当 20时,Ys和S几乎保持不变,其值与垂直入射时接近,溅射原子的发射角分布和能量分布也与垂直入射时的情

关键词:

The low-energy sputtering on Pt (111) surface by Ni atom at incident angle in a range of 0 80 (with respect to the direction normal to the surface) is studied by molecular dynamics simulations. The atomic interaction potential obtained with embedded atom method is used in the simulation. The dependence of sputtering yield, energy and angular distribution of sputtered particles as well as sticking probability of Ni atom on incident angle are discussed. The dependence of sputtering yield on incident angle can be divided into three different regions in , i.e., 20, 20 60, and 60. Based on sticking probability and movement of incident atom, physical mechanism of low-energy sputtering at oblique particle bombardment is suggested. When the incident angle is smaller than 20, the reflection of incident atom by target atom dominates the sputtering process of surface atom, which is similar to the sputtering mechanism for the case of = 0. While for 20 60, the reflection of incident atom is no longer important for the low-energy sputtering. For the case of 60, there occurs no sputtering.

Keywords:

作者及机构信息

1.
南昌航空大学测试与光电学院,无损检测技术教育部重点实验室,南昌 330063

基金项目: 南昌航空大学人才启动基金(批准号:EA200908182)、航空科学基金(批准号:2009ZE56009)和国家自然科学基金(批准号:50962011)资助的课题.

Authors and contacts

1.
Key Laboratory of Nondestructive Testing of Ministry of Education, School of Measuring and Optical Engineering, Nanchang Hangkong University, Nanchang 330063, China

参考文献

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施引文献

[1]	Sato Y, Yanagisawa K, Oka N, Nakamura S, Shigesato Y 2009 J. Vac. Sci. Technol. A 27 1166
[2]
[3]	Dolatshahi-Pirouz A, Hovgaard M B, Rechendorff K, Chevallier J, Foss M, Besenbacher F 2008 Phys. Rev. B 77 115427
[4]	Zhan Q F, Haesendonck C V, Vandezande S, Temst K 2009 Appl. Phys. Lett. 94 042504
[5]
[6]
[7]	Kai H, Li Y C, Guo D C, Li S, Li Z J 2009 Acta Phys. Sin. 58 4888 (in Chinese) [开花、李运超、郭德成、李双、李之杰 2009 58 4888]
[8]	Almen O, Bruce G 1961 Nucl. Instrum. Meth. B 11 257
[9]
[10]
[11]	Sigmund P 1969 Phys. Rev. 184 383
[12]
[13]	Shao Q J, Huo Y K, Chen J X, Wu S M, Pan Z Y 1991 Acta Phys.Sin. 40 659 (in Chinese) [邵其鋆、霍裕昆、陈建新、吴士明、潘正瑛 1991 40 659]
[14]	Feil H, Zwol J, Zwart S T, Dieleman J 1991 Phys. Rev. B 43 13695
[15]
[16]
[17]	Yan C, L H F, Zhang C, Zhang Q Y 2006 Acta Phys. Sin. 55 1351 (in Chinese) [颜超、吕海峰、张超、张庆瑜 2006 55 1351]
[18]
[19]	Zhang C, Wang Y L, Yan C, Zhang Q Y 2006 Acta Phys. Sin. 55 2882 (in Chinese) [张超、王永亮、颜超、张庆瑜 2006 55 2882]
[20]
[21]	Zhang C, L H F, Zhang Q Y 2002 Acta Phys. Sin. 51 2329 (in Chinese) [张超、吕海峰、张庆瑜 2002 51 2329]
[22]	Acosta M, Ares O, Sosa V, Acosta C, Pea J L 1999 J. Vac. Sci. Technol. A 17 2879
[23]
[24]
[25]	Hanson D E, Stephens B C, Saravanan C, Kress J D 2001 J. Vac. Sci. Technol. A 19 820
[26]	Abrams C F, Graves D B 1999 J. Appl. Phys. 86 2263
[27]
[28]
[29]	Sekowski M, Burenkov A, Hernndez-Mangas J, Martinez-Limia A, Ryssel H 2008 AIP Conf. Proc. 1066 236
[30]	Kenmotsu T, Wada M, Hyakutake T, Muramoto T, Nishida M 2010 Rev. Sci. Intrum. 81 02B109
[31]
[32]
[33]	Daw M S, Baskes M I 1984 Phys. Rev. B 29 6443
[34]	Foiles S M, Baskes M I, Daw M S 1986 Phys. Rev. B 33 7983
[35]
[36]
[37]	Swope W C, Andersen H C, Berens P H, Wilson K R 1982 J. Chem. Phys. 76 637
[38]	Oechsner H 1973 J. Phys. 261 37
[39]
[40]
[41]	Whetten T J, Armstead A A, Grzybowski T A, Ruo A L 1984 J. Vac. Sci. Technol. A 2 477
[42]
[43]	Oyarzabal E,Yu J H, Doerner R P, Tynan G R 2006 J. Appl. Phys. 100 063301
[44]	Oechsner H 1970 Phys. Rev. Lett. 24 583
[45]
[46]
[47]	Eckstein W, Roth J, Nagel W, Dohmen R 2004 J. Nucl. Mater. 328 55
[48]
[49]	Behrisch R, Maderlechner G, Scherzer B M U, Robinson M T 1979 Appl. Phys. A 18 391

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