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The Bi0.85Nd0.15FeO3 thin films were prepared on the Pt/Ti/SiO2/Si substrates by Sol-gel method.The effect of annealing temperature on formation of Bi0.85Nd0.15FeO3 phase was investigated. It was found that the Bi0.85Nd0.15FeO3 phase was formed and coexisted with the impurity phase when the films annealed at 450 ℃. The single-phase Bi0.85Nd0.15FeO3 films were obtained,when they were annealed at 500—600 ℃. Bi0.85Nd0.15FeO3 films annealed at 600 ℃ had saturated magnetization about 44.8 emu/cm3, remnant polarization (2Pr) about 16.6 μC/cm2,dielectric constant 145 and dielectric loss 0.032(1 MHz), respectively.
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Keywords:
- sol-gel method /
- Bi0.85Nd0.15FeO3 thin film /
- dielectric properties /
- ferroelectric properties
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[1] Hur N, Park S, Sharma P A, Ahn J S, Guha S, Cheong S W 2004 Nature 429 392
[2] Zheng H, Wang J, Lofland S E, Ma Z, Mohaddes-Ardabili, Zhao T, Salamanca-Riba L, Shinde S R, Ogale S B, Bai F, Viehland D, Jia Y, Schlom D G, Wuttig M, Roytburd A, Ramesh R 2004 Science 303 661
[3] Klmura T, Goto T, Shintani H, Ishizaka K, Arima T, Tokura Y 2003 Nature 426 6962
[4] Eerenstein W, Mathur N D, Scott J F 2006 Nature 442 759
[5] Hemberger J, Lunkenheimer P, Fichti R, Krug H, Tsurkan V, Loidl A 2005 Nature 434 364
[6] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M, Ramesh R 2003 Science 299 1719
[7] Kornev I A, Lisenkov S, Haumont R, Dkhil B, Bellaiche L 2007 Phys. Rev. Lett. 99 227602
[8] Neaton J B, Ederer C, Waghmare U V, Spaldin N A, Rabe K M 2005 Phys. Rev. B71 014113
[9] Bea H, Bibes M, Ott F, Dupe B, Zhu X H, Petit S, Fusil S, Deranlot C, Bouzehouane K, Barthelemy A 2008 Phys. Rev. Lett. 100 017204
[10] Ravindran P, Vidya R, Kjekshus A, Fjellvag H, Eriksson O 2006 Phys. Rev. B74 224412
[11] Palkar V R, Kundaliya D C, Malik S K 2003 J. Appl. Phys. 93 4337
[12] Sun Y, Huang Z, Fan H, Ming X, Wang C, Chen G 2009 Acta. Phys. Sin. 58 0193 (in Chinese) [孙 源、黄祖飞、范厚刚、明 星,王春忠、陈 岗 2009 58 193]
[13] Singh S, Menou N, Funakubo H, Maruyama K, Ishiwara H 2007 Appl. Phys. Lett. 90 242914
[14] Khomchenko V, Kiselev D, Bdikin I, Shvartsman V, Borisov P, Kleemann W, Vieira J, Kholkin A 2008 Appl. Phys. Lett. 93 262905
[15] Wang Y, Nan C 2006 Appl. Phys. Lett. 89 052903
[16] Das S R, Bhattacharya P, Choudhary N, Katiyar R 2006 J. Appl. Phys. 99 066107
[17] Lee D, Kim M G, Ryu S, Jang H 2005 Appl. Phys. Lett. 86 222903
[18] Yuan G L, Or S W 2006 J. Appl. Phys. 100 024109
[19] Yan Z, Wang K F, Qu J F, Wang Y, Song Z T, Feng S L 2007 Appl. Phys. Lett. 91 082906
[20] Huang F Z, Lu X M, Lin W, Wu X M, Yi K, Zhu J S 2006 Appl. Phys. Lett. 89 242914
[21] Liu H R, Liu Z L, Liu Q, Yao K L 2006 Thin Solid Films 500 105
[22] Kim J K, Kim S S, Kim W J 2005 Mater. Lett. 59 4006
[23] Ghosh S, Dasgupta S, Sen A, Maiti H S 2005 Mater. Res. Bull. 40 2073
[24] Wei J, Xue D, Wu C, Li Z X 2008 J. Alloys and Comp. 453 20
[25] Gao F, Cai C, Wang Y, Dong S, Qiu X Y, Yuan G L, Liu Z G, Liu J M 2006 J. Appl. Phys. 99 094105
[26] Guo D, Wang Y, Yu J, Gao J, Li M 2006 Acta Phys. Sin. 55 5551 (in Chinese) [郭冬云、王耘波、于 军、高俊雄、李美亚 2006 55 5551]
[27] Guo D Y, Li M Y, Pei L, Yu B F, Wu G Z, Zhao X Z, Wang Y B, Yu J 2007 Sci. China Ser. E-Tech. Sci. 50 1
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