| [1] |
Li Jian-Jun, Cui Yu-Zheng, Fu Cong-Le, Qin Xiao-Wei, Li Yu-Chang, Deng Jun. Optimization theory and application of epitaxial layer thickness uniformity in vertical MOCVD reaction chamber with multiple MO nozzles. Acta Physica Sinica,
2024, 73(4): 046801.
doi: 10.7498/aps.73.20231555
|
| [2] |
Jiang Feng-Yi, Liu Jun-Lin, Zhang Jian-Li, Xu Long-Quan, Ding Jie, Wang Guang-Xu, Quan Zhi-Jue, Wu Xiao-Ming, Zhao Peng, Liu Bi-Yu, Li Dan, Wang Xiao-Lan, Zheng Chang-Da, Pan Shuan, Fang Fang, Mo Chun-Lan. Semiconductor yellow light-emitting diodes. Acta Physica Sinica,
2019, 68(16): 168503.
doi: 10.7498/aps.68.20191044
|
| [3] |
Zhang Zhi-Rong, Fang Yu-Long, Yin Jia-Yun, Guo Yan-Min, Wang Bo, Wang Yuan-Gang, Li Jia, Lu Wei-Li, Gao Nan, Liu Pei, Feng Zhi-Hong. Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates. Acta Physica Sinica,
2018, 67(7): 076801.
doi: 10.7498/aps.67.20172581
|
| [4] |
Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao. Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor deposition. Acta Physica Sinica,
2017, 66(10): 106101.
doi: 10.7498/aps.66.106101
|
| [5] |
Wang Bao-Zhu, Zhang Xiu-Qing, Zhang Ao-Di, Zhou Xiao-Ran, Bahadir Kucukgok, Na Lu, Xiao Hong-Ling, Wang Xiao-Liang, Ian T. Ferguson. Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition. Acta Physica Sinica,
2015, 64(4): 047202.
doi: 10.7498/aps.64.047202
|
| [6] |
Zhu Shun-Ming, Gu Ran, Huang Shi-Min, Yao Zheng-Grong, Zhang Yang, Chen Bin, Mao Hao-Yuan, Gu Shu-Lin, Ye Jian-Dong, Zheng You-Dou. Influence and mechanism of H2 in the epitaxial growth of ZnO using metal-organic chemical vapor deposition method. Acta Physica Sinica,
2014, 63(11): 118103.
doi: 10.7498/aps.63.118103
|
| [7] |
Wu Liang-Liang, Zhao De-Gang, Li Liang, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng. Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition. Acta Physica Sinica,
2013, 62(8): 086102.
doi: 10.7498/aps.62.086102
|
| [8] |
Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica,
2010, 59(7): 4996-5001.
doi: 10.7498/aps.59.4996
|
| [9] |
Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica,
2010, 59(2): 1233-1236.
doi: 10.7498/aps.59.1233
|
| [10] |
Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica,
2009, 58(10): 7282-7287.
doi: 10.7498/aps.58.7282
|
| [11] |
Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue. The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition. Acta Physica Sinica,
2009, 58(8): 5705-5708.
doi: 10.7498/aps.58.5705
|
| [12] |
Cui Ying-Chao, Xie Zi-Li, Zhao Hong, Mei Qin, Li Yi, Liu Bin, Song Li-Hong, Zhang Rong, Zheng You-Dou. Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition. Acta Physica Sinica,
2009, 58(12): 8506-8510.
doi: 10.7498/aps.58.8506
|
| [13] |
Yang Fan, Ma Jin, Kong Ling-Yi, Luan Cai-Na, Zhu Zhen. Structural， optical and electrical properties of Ga2（1-x）In2xO3 films prepared by metalorganic chemical vapor deposition. Acta Physica Sinica,
2009, 58(10): 7079-7082.
doi: 10.7498/aps.58.7079
|
| [14] |
Wang Ye-An, Qin Fu-Wen, Wu Dong-Jiang, Wu Ai-Min, Xu Yin, Gu Biao. Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition. Acta Physica Sinica,
2008, 57(1): 508-513.
doi: 10.7498/aps.57.508
|
| [15] |
Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui. Poly-SiGe films prepared by metal-induced growth using UHVCVD system. Acta Physica Sinica,
2006, 55(7): 3756-3759.
doi: 10.7498/aps.55.3756
|
| [16] |
Wang Hao, Zeng Gu-Cheng, Liao Chang-Jun, Cai Ji-Ye, Zheng Shu-Wen, Fan Guang-Han, Chen Yong, Liu Song-Hao. Study on the metamorphosis of InP self-organized islands grown on GaxxIn1-x1-xP buffer layers. Acta Physica Sinica,
2005, 54(4): 1726-1730.
doi: 10.7498/aps.54.1726
|
| [17] |
Ma Hong, Zhu Guang-Xi, Chen Si-Hai, Yi Xin-Jian. MOVPE growth of 1310?nm polarizationinsensitive strained quantumwell semiconductor optical amplifiers*. Acta Physica Sinica,
2004, 53(12): 4257-4261.
doi: 10.7498/aps.53.4257
|
| [18] |
Chen Dun-Jun, Shen Bo, Zhang Kai-Xiao, Deng Yong-Zhen, Fan Jie, Zhang Rong, Shi Yi, Zheng You-Dou. Structural properties of GaN1-xPx films. Acta Physica Sinica,
2003, 52(7): 1788-1791.
doi: 10.7498/aps.52.1788
|
| [19] |
LU LI-WU, ZHOU JIE, FENG SONG-LIN, DUAN SHU-KUN. DEEP LEVEL STUDIES OF Ga1-xInxAs/InP LASERS GROWN BY LP-MOVPE. Acta Physica Sinica,
1994, 43(5): 779-784.
doi: 10.7498/aps.43.779
|
| [20] |
QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG. MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs. Acta Physica Sinica,
1993, 42(12): 1956-1962.
doi: 10.7498/aps.42.1956
|
下载:
