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Chen Shang-Feng, Sun Nai-Kun, Zhang Xian-Min, Wang Kai, Li Wu, Han Yan, Wu Li-Jun, Dai Qin. Preparation and thermoelectric properties of Mn3As2-doped Cd3As2 nanostructures. Acta Physica Sinica,
2022, 71(18): 187201.
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Liang Qi, Wang Ru-Zhi, Yang Meng-Qi, Wang Chang-Hao, Liu Jin-Wei. Preparing GaN nanowires on Al2O3 substrate without catalyst and its optical property. Acta Physica Sinica,
2020, 69(8): 087801.
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Ding Chao, Li Wei1\2\3, Liu Ju-Yan, Wang Lin-Lin, Cai Yun, Pan Pei-Feng. First principle study of electronic structure of Sb, S Co-doped SnO2. Acta Physica Sinica,
2018, 67(21): 213102.
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Feng Qiu-Ju, Pan De-Zhu, Xing Yan, Shi Xiao-Chi, Yang Yu-Qi, Li Fang, Li Tong-Tong, Guo Hui-Ying, Liang Hong-Wei. Growth, structural and optical properties of orderly SnO2 microhemispheres on patterned sapphire substrates. Acta Physica Sinica,
2017, 66(3): 038101.
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He Qiong, Xu Xiang-Dong, Wen Yue-Jiang, Jiang Ya-Dong, Ao Tian-Hong, Fan Tai-Jun, Huang Long, Ma Chun-Qian, Sun Zi-Qiang. Growth mechanism and optoelectronic properties of vanadium oxide films prepared by Sol-Gel. Acta Physica Sinica,
2013, 62(5): 056802.
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Han Yu-Yan, Cao Liang, Xu Fa-Qiang, Chen Tie-Xin, Zheng Zhi-Yuan, Wan Li, Liu Ling-Yun. Preparation and investigation of the formation mechanism of organic single crystal nanostructures of PTCDA. Acta Physica Sinica,
2012, 61(7): 078103.
doi: 10.7498/aps.61.078103
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Zhu Hang-Tian, Liu Quan-Lin, Liang Jing-Kui, Rao Guang-Hui, Zhang Fan, Luo Jun. Synthesis and characterization of Sb2Te3 nanostructures. Acta Physica Sinica,
2010, 59(10): 7232-7238.
doi: 10.7498/aps.59.7232
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Ma Hai-Lin, Su Qing, Lan Wei, Liu Xue-Qin. Influence of oxygen pressure on the structure and photoluminescence of β-Ga2O3 nano-material prepared by thermal evaporation. Acta Physica Sinica,
2008, 57(11): 7322-7326.
doi: 10.7498/aps.57.7322
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Zeng Chun-Lai, Tang Dong-Sheng, Liu Xing-Hui, Hai Kuo, Yang Yi, Yuan Hua-Jun, Xie Si-Shen. Controllable preparation of SnO2 one-dimensional nanostructures by chemical vapor deposition. Acta Physica Sinica,
2007, 56(11): 6531-6536.
doi: 10.7498/aps.56.6531
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Du Juan, Ji Zhen-Guo. The effect of Ⅲ-family element doping on electronic structures and electrical characteristics of SnO2. Acta Physica Sinica,
2007, 56(4): 2388-2392.
doi: 10.7498/aps.56.2388
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. Simulative calculation of electronic structure of F-doped SnO2. Acta Physica Sinica,
2007, 56(12): 7195-7200.
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Ding Cai-Rong, Wang Bing, Yang Guo-Wei, Wang He-Zhou. High quality SnO2 crystals grown with catalyst-assistance and study on their photoluminescent spectroscopy. Acta Physica Sinica,
2007, 56(3): 1775-1778.
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Zhang Yong-Ju, Yu Sen-Jiang, Ge Hong-Liang, Wu Liang-Neng, Cui Yu-Jian. Growth mechanism and ordered structures of iron films sputter-deposited on silicone oil surfaces. Acta Physica Sinica,
2006, 55(10): 5444-5450.
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Liu Shi-Feng, Qin Guo-Gang, You Li-Ping, Zhang Ji-Cai, Fu Zhu-Xi, Dai Lun. Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique. Acta Physica Sinica,
2005, 54(9): 4329-4333.
doi: 10.7498/aps.54.4329
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Ji Zhen-Guo, He Zhen-Jie, Song Yong-Liang. Preparation and characterization of In-doped p-type SnO2 thin films by solgel dipcoating*. Acta Physica Sinica,
2004, 53(12): 4330-4333.
doi: 10.7498/aps.53.4330
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Peng Ying-Cai, M. Ikeda, S. Miyazaki. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition. Acta Physica Sinica,
2003, 52(12): 3108-3113.
doi: 10.7498/aps.52.3108
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Ding Pei, Liang Er-Jun, Zhang Hong-Rui, Liu Yi-Zhen, Liu Hui, Guo Xin-Yong, Du Zu-Liang. Growth mechanism and Raman spectroscopic study of “interlinked-cone" shaped CNx nanotubes. Acta Physica Sinica,
2003, 52(1): 237-241.
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Wang Yin-Shu, Sun Ping, Ding Shuo, Luo Xu-Hui, Li Na, Wang Ruo-Zhen. . Acta Physica Sinica,
2002, 51(12): 2892-2895.
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DU YOU-WEI, CHEN PENG, ZHU JIAN-MIN, XING DING-YU. GIANT TUNNELING MAGNETORESISTANCE IN NANOSTRUCTURED ZnxFe3-xO4-α-Fe2O3 POLYCRYSTALLINE MATERIAL. Acta Physica Sinica,
2001, 50(11): 2275-2277.
doi: 10.7498/aps.50.2275
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HU YING. SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD. Acta Physica Sinica,
2001, 50(12): 2452-2455.
doi: 10.7498/aps.50.2452
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