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香港科技大学物理系,香港九龙清水湾
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[1] Zhao Ming-Liang, Chen Song, Sun Feng, Zhang Jing, Lin Yan, Zhang Wei-Ru, Wang Wei-Guo. Grain boundary character distributions in Si3N4 ceramics. Acta Physica Sinica, 2021, 70(22): 226801. doi: 10.7498/aps.70.20210233 [2] Dai Yue-Hua, Jin Bo, Wang Jia-Yu, Chen Zhen, Li Ning, Jiang Xian-Wei, Lu Wen-Juan, Li Xiao-Feng. First-principles study on the minimization of over-erase phenomenon in Si3N4 trapping layer. Acta Physica Sinica, 2015, 64(13): 133102. doi: 10.7498/aps.64.133102 [3] Cheng Chao-Qun, Li Gang, Zhang Wen-Dong, Li Peng-Wei, Hu Jie, Sang Sheng-Bo, Deng Xiao. Electronic structures and optical properties of boron and phosphorus doped β-Si3N4. Acta Physica Sinica, 2015, 64(6): 067102. doi: 10.7498/aps.64.067102 [4] Li Wei-Cong, Zou Zhi-Qiang, Wang Dan, Shi Gao-Ming. STM study of growth of manganese silicide thin films on a Si(100)-21 surface. Acta Physica Sinica, 2012, 61(6): 066801. doi: 10.7498/aps.61.066801 [5] Yu Ben-Hai, Chen Dong. First-principles study on the electronic structure and phase transition of α-, β- and γ-Si3N4. Acta Physica Sinica, 2012, 61(19): 197102. doi: 10.7498/aps.61.197102 [6] Wu Xiao-Yan, Kong Ming, Li Ge-Yang, Zhao Wen-Ji. Crystallization of Si3N4 on h-AlN and superhardness effect of AlN/Si3N4 nanomultilayers. Acta Physica Sinica, 2009, 58(4): 2654-2659. doi: 10.7498/aps.58.2654 [7] Yu Li-Hua, Dong Song-Tao, Dong Shi-Run, Xu Jun-Hua. Epitaxial growth and mechanical properties of AlN/Si3N4 nanostructured multilayers. Acta Physica Sinica, 2008, 57(8): 5151-5158. doi: 10.7498/aps.57.5151 [8] Zhu Ying-Tao, Yang Chuan-Lu, Wang Mei-Shan, Dong Yong-Mian. First-principles calculations on the electrical structures and vibration frequencies of β-Si3N4. Acta Physica Sinica, 2008, 57(2): 1048-1053. doi: 10.7498/aps.57.1048 [9] Tang Li-Dan, Zhang Yue. Preparation and characteristics of p-type ZnO by treated gaseous ammonia annealing. Acta Physica Sinica, 2008, 57(2): 1145-1149. doi: 10.7498/aps.57.1145 [10] Ding Ying-Chun, Xiang An-Ping, Xu Ming, Zhu Wen-Jun. Electrical structures and optical properties of doped earth element (Y，La) in γ-Si3N4. Acta Physica Sinica, 2007, 56(10): 5996-6002. doi: 10.7498/aps.56.5996 [11] Zhao Wen-Ji, Dong Yun-Shan, Yue Jian-Ling, Li Ge-Yang. Crystallization of Si3N4 and superhardness effect of ZrN/Si3N4 nano-multilayers. Acta Physica Sinica, 2007, 56(1): 459-464. doi: 10.7498/aps.56.459 [12] Ding Ying-Chun, Xu Ming, Pan Hong-Zhe, Shen Yi-Bin, Zhu Wen-Jun, He Hong-Liang. Electronic structure and physical properties of γ-Si3N4 under high pressure. Acta Physica Sinica, 2007, 56(1): 117-122. doi: 10.7498/aps.56.117 [13] Pan Hong-Zhe, Xu Ming, Zhu Wen-Jun, Zhou Hai-Ping. First-principles study on the electrical structures and optical properties of β-Si3N4. Acta Physica Sinica, 2006, 55(7): 3585-3589. doi: 10.7498/aps.55.3585 [14] ZHANG XIAO-QING, G.M.SESSLER, XIA ZHONG-FU, ZHANG YE-WEN. CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE. Acta Physica Sinica, 2001, 50(2): 293-298. doi: 10.7498/aps.50.293 [15] WANG LEI, TANG JING-CHANG, WANG XUE-SEN. SCANNING TUNNELING MICROSCOPY STUDY OF Si GROWTH ON Si3N4/Si SURFACE. Acta Physica Sinica, 2001, 50(3): 517-522. doi: 10.7498/aps.50.517 [16] CHEN JUN-FANG, WU XIAN-QIU, WANG DE-QIU, DING ZHEN-FENG, REN ZHAO-XING. INVESTIGATION ON THE DEPOSITION PROCESS OF SILICON NITRIDE THIN FILM PREPARED BY ECR-PECVD. Acta Physica Sinica, 1999, 48(7): 1309-1314. doi: 10.7498/aps.48.1309 [17] DUAN YU-HUA, ZHANG KAI-MING, XIE XI-DE. BAND STRUCTURAL PROPERTIES OF β-C3N4, β-Si3N4 AND β-Ge3N4. Acta Physica Sinica, 1996, 45(3): 512-517. doi: 10.7498/aps.45.512 [18] HU CHANG-WU, YU LI-MIN, XU YING, ZHU ANG-RU, WANG ZHAO-YONG. PHOTOACOUSTIC SPECTROSCOPY INVESTIGATION OF NH PHYSISORPTION ON CLEAN AND OXYGEN PRE-ADSORBED Cu SURFACE. Acta Physica Sinica, 1992, 41(7): 1119-1124. doi: 10.7498/aps.41.1119 [19] QI MING, LUO JIN-SHENG. A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE. Acta Physica Sinica, 1988, 37(10): 1600-1606. doi: 10.7498/aps.37.1600 [20] WEN SHU-LIN, FENG JING-WEI. LATTICE DEFECTS IN α-Si3N4 STUDIED BY HREM. Acta Physica Sinica, 1985, 34(7): 951-955. doi: 10.7498/aps.34.951
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05 January 2000
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