[1] |
Zhao Ming-Liang, Chen Song, Sun Feng, Zhang Jing, Lin Yan, Zhang Wei-Ru, Wang Wei-Guo. Grain boundary character distributions in Si3N4 ceramics. Acta Physica Sinica,
2021, 70(22): 226801.
doi: 10.7498/aps.70.20210233
|
[2] |
Li Shu-Ping, Zhang Zhi-Li, Fu Kai, Yu Guo-Hao, Cai Yong, Zhang Bao-Shun. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics. Acta Physica Sinica,
2017, 66(19): 197301.
doi: 10.7498/aps.66.197301
|
[3] |
Dai Yue-Hua, Jin Bo, Wang Jia-Yu, Chen Zhen, Li Ning, Jiang Xian-Wei, Lu Wen-Juan, Li Xiao-Feng. First-principles study on the minimization of over-erase phenomenon in Si3N4 trapping layer. Acta Physica Sinica,
2015, 64(13): 133102.
doi: 10.7498/aps.64.133102
|
[4] |
Cheng Chao-Qun, Li Gang, Zhang Wen-Dong, Li Peng-Wei, Hu Jie, Sang Sheng-Bo, Deng Xiao. Electronic structures and optical properties of boron and phosphorus doped β-Si3N4. Acta Physica Sinica,
2015, 64(6): 067102.
doi: 10.7498/aps.64.067102
|
[5] |
Yu Ben-Hai, Chen Dong. First-principles study on the electronic structure and phase transition of α-, β- and γ-Si3N4. Acta Physica Sinica,
2012, 61(19): 197102.
doi: 10.7498/aps.61.197102
|
[6] |
Li Zhi-Cheng, Liu Bin, Zhang Rong, Zhang Zhao, Tao Tao, Xie Zi-Li, Chen Peng, Jiang Ruo-Lian, Zheng You-Dou, Ji Xiao-Li. Design and fabrication of SiO2/Si3N4 dielectric distributed Bragg reflectors for ultraviolet optoelectronic applications. Acta Physica Sinica,
2012, 61(8): 087802.
doi: 10.7498/aps.61.087802
|
[7] |
Wu Xiao-Yan, Kong Ming, Li Ge-Yang, Zhao Wen-Ji. Crystallization of Si3N4 on h-AlN and superhardness effect of AlN/Si3N4 nanomultilayers. Acta Physica Sinica,
2009, 58(4): 2654-2659.
doi: 10.7498/aps.58.2654
|
[8] |
Yu Li-Hua, Dong Song-Tao, Dong Shi-Run, Xu Jun-Hua. Epitaxial growth and mechanical properties of AlN/Si3N4 nanostructured multilayers. Acta Physica Sinica,
2008, 57(8): 5151-5158.
doi: 10.7498/aps.57.5151
|
[9] |
Zhu Ying-Tao, Yang Chuan-Lu, Wang Mei-Shan, Dong Yong-Mian. First-principles calculations on the electrical structures and vibration frequencies of β-Si3N4. Acta Physica Sinica,
2008, 57(2): 1048-1053.
doi: 10.7498/aps.57.1048
|
[10] |
Ding Ying-Chun, Xiang An-Ping, Xu Ming, Zhu Wen-Jun. Electrical structures and optical properties of doped earth element (Y,La) in γ-Si3N4. Acta Physica Sinica,
2007, 56(10): 5996-6002.
doi: 10.7498/aps.56.5996
|
[11] |
Zhao Wen-Ji, Dong Yun-Shan, Yue Jian-Ling, Li Ge-Yang. Crystallization of Si3N4 and superhardness effect of ZrN/Si3N4 nano-multilayers. Acta Physica Sinica,
2007, 56(1): 459-464.
doi: 10.7498/aps.56.459
|
[12] |
Ding Ying-Chun, Xu Ming, Pan Hong-Zhe, Shen Yi-Bin, Zhu Wen-Jun, He Hong-Liang. Electronic structure and physical properties of γ-Si3N4 under high pressure. Acta Physica Sinica,
2007, 56(1): 117-122.
doi: 10.7498/aps.56.117
|
[13] |
Pan Hong-Zhe, Xu Ming, Zhu Wen-Jun, Zhou Hai-Ping. First-principles study on the electrical structures and optical properties of β-Si3N4. Acta Physica Sinica,
2006, 55(7): 3585-3589.
doi: 10.7498/aps.55.3585
|
[14] |
ZHANG XIAO-QING, G.M.SESSLER, XIA ZHONG-FU, ZHANG YE-WEN. CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE. Acta Physica Sinica,
2001, 50(2): 293-298.
doi: 10.7498/aps.50.293
|
[15] |
ZHANG YONG-PING, GU YOU-SONG, GAO HONG-JUN, ZHANG XIU-FANG. STRUCTURAL CHARACTERIZATION OF C3N4 THIN FILMS SYNTHESIZED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica,
2001, 50(7): 1396-1400.
doi: 10.7498/aps.50.1396
|
[16] |
WANG LEI, TANG JING-CHANG, WANG XUE-SEN. SCANNING TUNNELING MICROSCOPY STUDY OF Si GROWTH ON Si3N4/Si SURFACE. Acta Physica Sinica,
2001, 50(3): 517-522.
doi: 10.7498/aps.50.517
|
[17] |
Zhai Guang-Jie, Yang Jian-Shu, Chen Xian-Bang, Wang Xue-Shen. . Acta Physica Sinica,
2000, 49(2): 215-219.
doi: 10.7498/aps.49.215
|
[18] |
DUAN YU-HUA, ZHANG KAI-MING, XIE XI-DE. BAND STRUCTURAL PROPERTIES OF β-C3N4, β-Si3N4 AND β-Ge3N4. Acta Physica Sinica,
1996, 45(3): 512-517.
doi: 10.7498/aps.45.512
|
[19] |
WANG SHAN-ZHONG, LI DAO-HUO. A STUDY ON LASER-PREPARATION AND ENERGY- LEVEL STRUCTURE OF NANOMETER SIZED a-Si3N4 PARTICLES. Acta Physica Sinica,
1994, 43(4): 627-631.
doi: 10.7498/aps.43.627
|
[20] |
WEN SHU-LIN, FENG JING-WEI. LATTICE DEFECTS IN α-Si3N4 STUDIED BY HREM. Acta Physica Sinica,
1985, 34(7): 951-955.
doi: 10.7498/aps.34.951
|