| [1] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng. Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica,
2016, 65(12): 127401.
doi: 10.7498/aps.65.127401
|
| [2] |
He Ju-Sheng, Zhang Meng, Pan Hua-Qing, Qi Wei-Jing, Li Ping. A new method to determine the dislocation density in wurtzite n-GaN. Acta Physica Sinica,
2016, 65(16): 167201.
doi: 10.7498/aps.65.167201
|
| [3] |
Li Wen-Tao, Liang Yan, Wang Wei-Hua, Yang Fang, Guo Jian-Dong. Precise control of LaTiO3(110) film growth by molecular beam epitaxy and surface termination of the polar film. Acta Physica Sinica,
2015, 64(7): 078103.
doi: 10.7498/aps.64.078103
|
| [4] |
Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua. Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica,
2015, 64(7): 077501.
doi: 10.7498/aps.64.077501
|
| [5] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun. Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica,
2014, 63(2): 027401.
doi: 10.7498/aps.63.027401
|
| [6] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming. Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2011, 60(2): 028101.
doi: 10.7498/aps.60.028101
|
| [7] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
doi: 10.7498/aps.59.8026
|
| [8] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin. Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica,
2008, 57(2): 1236-1240.
doi: 10.7498/aps.57.1236
|
| [9] |
Zhou Nai-Gen, Zhou Lang, Du Dan-Xu. Structure and formation of misfit dislocations in an epitaxial fcc film. Acta Physica Sinica,
2006, 55(1): 372-377.
doi: 10.7498/aps.55.372
|
| [10] |
Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
2006, 55(7): 3606-3610.
doi: 10.7498/aps.55.3606
|
| [11] |
Zhou Nai-Gen, Zhou Lang. Conditions for formation of misfit dislocation in epitaxial films — a molecular dynamics study. Acta Physica Sinica,
2005, 54(7): 3278-3283.
doi: 10.7498/aps.54.3278
|
| [12] |
LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN. EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica,
2000, 49(6): 1132-1135.
doi: 10.7498/aps.49.1132
|
| [13] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG. FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica,
1998, 47(8): 1346-1353.
doi: 10.7498/aps.47.1346
|
| [14] |
YI XIN-JIAN, LI YI, HAO JIAN-HUA, ZHANG XIN-YU, G.K.WONG. THIN FILMS OF Sb GROWN BY MOLECULAR BEAM EPITAXY AND THE QUANTUM SIZE EFFECT. Acta Physica Sinica,
1998, 47(11): 1896-1899.
doi: 10.7498/aps.47.1896
|
| [15] |
LU LI-WU, ZHOU JIE, LIANG JI-BEN, KONG MEI-YING. DEEP LEVEL STUDIES OF P-HEMT STRUCTURE GROWN BY MBE. Acta Physica Sinica,
1993, 42(5): 817-823.
doi: 10.7498/aps.42.817
|
| [16] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI. THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica,
1990, 39(12): 1959-1964.
doi: 10.7498/aps.39.1959
|
| [17] |
YANG SHUN-HUA, HU XIAO-FENG, MA RU-ZHANG. THE ELASTIC PROPERTIES OF A DISLOCATION IN TWO PHASE MEDIUM. Acta Physica Sinica,
1989, 38(9): 1483-1491.
doi: 10.7498/aps.38.1483
|
| [18] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1988, 37(10): 1607-1612.
doi: 10.7498/aps.37.1607
|
| [19] |
LIU ZHEN-MAO, WANG GUI-HUA. A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1980, 29(9): 1164-1179.
doi: 10.7498/aps.29.1164
|
| [20] |
. . Acta Physica Sinica,
1975, 24(2): 83-86.
doi: 10.7498/aps.24.83
|
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