| [1] |
Li Jun-Wei, Wang Zu-Jun, Shi Cheng-Ying, Xue Yuan-Yuan, Ning Hao, Xu Rui, Jiao Qian-Li, Jia Tong-Xuan. Modeling and simulating of radiation effects on the performance degradation of GaInP/GaAs/Ge triple-junction solar cells induced by different energy protons. Acta Physica Sinica,
2020, 69(9): 098802.
doi: 10.7498/aps.69.20191878
|
| [2] |
Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming. Band structure model of modified Ge for optical device application. Acta Physica Sinica,
2018, 67(19): 198502.
doi: 10.7498/aps.67.20181155
|
| [3] |
Qi Jia-Hong, Hu Jian-Min, Sheng Yan-Hui, Wu Yi-Yong, Xu Jian-Wen, Wang Yue-Yuan, YANG Xiao-Ming, Zhang Zi-Rui, Zhou Yang. Carrier transport mechanism of GaAs/Ge solar cells under electrons irradiation. Acta Physica Sinica,
2015, 64(10): 108802.
doi: 10.7498/aps.64.108802
|
| [4] |
Yue Long, Wu Yi-Yong, Zhang Yan-Qing, Hu Jian-Min, Sun Cheng-Yue, Hao Ming-Ming, Lan Mu-Jie. Effect of irradiation damage on the dark electric properties of single junction GaAs/Ge solar cells. Acta Physica Sinica,
2014, 63(18): 188101.
doi: 10.7498/aps.63.188101
|
| [5] |
Lan Mu-Jie, Wu Yi-Yong, Hu Jian-Min, He Shi-Yu, Yue Long, Xiao Jing-Dong, Yang De-Zhuang, Zhang Zhong-Wei, Wang Xun-Chun, Qian Yong, Chen Ming-Bo. Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose. Acta Physica Sinica,
2011, 60(9): 098110.
doi: 10.7498/aps.60.098110
|
| [6] |
Zhao Hui-Jie, He Shi-Yu, Sun Yan-Zheng, Sun Qiang, Xiao Zhi-Bin, Lü Wei, Huang Cai-Yong, Xiao Jing-Dong, Wu Yi-Yong. Effect of 100 keV proton irradiation on photoemission of GaAs/Ge space solar cells. Acta Physica Sinica,
2009, 58(1): 404-410.
doi: 10.7498/aps.58.404
|
| [7] |
Hu Jian-Min, Wu Yi-Yong, Qian Yong, Yang De-Zhuang, He Shi-Yu. Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell. Acta Physica Sinica,
2009, 58(7): 5051-5056.
doi: 10.7498/aps.58.5051
|
| [8] |
Song Ying-Xin, Zheng Wei-Min, Liu Jing, Chu Ning-Ning, Li Su-Mei. Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells. Acta Physica Sinica,
2009, 58(9): 6471-6476.
doi: 10.7498/aps.58.6471
|
| [9] |
LI GUO-HUI, ZHOU SHI-PING, XU DE-MING. RESEARCH ON THE DYNAMICAL BEHAVIORS OF GaAs/AlGaAs HETEROSTRUCTURES. Acta Physica Sinica,
2001, 50(8): 1567-1573.
doi: 10.7498/aps.50.1567
|
| [10] |
CHEN ZHANG-HAI, HU CAN-MING, LIU PU-LIN, SHI GUO-LIANG, SHEN XUE-CHU. RESONANT SUBBAND-LANDAU-LEVEL COUPLING FOR HIGH-LYING SUBBANDS OF TWO-DIMENSIONAL ELECTRON GASES IN GaAs/AlGaAs HETEROJUNCTION. Acta Physica Sinica,
1998, 47(3): 494-501.
doi: 10.7498/aps.47.494
|
| [11] |
BAN DA-YAN, FANG RONG-CHUAN, YANG FENG-YUAN, XU SHI-HONG, XU PENG-SHOU, YUAN SHI-XIN. VALENCE BAND OFFSETS OF Ge/ZnSe(100) STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION. Acta Physica Sinica,
1997, 46(3): 587-595.
doi: 10.7498/aps.46.587
|
| [12] |
HAN HE-XIANG, WANG ZHAO-PING, LI GUO-HUA, JIANG DE-SHENG, K. PLOOG. NEAR RESONANT RAMAN SCATTERING FROM GaAs/AlAs SUPERLATTICES. Acta Physica Sinica,
1992, 41(4): 661-667.
doi: 10.7498/aps.41.661
|
| [13] |
ZHANG YONG, ZHENG JIAN-SHENG, WU BO-XI. THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx. Acta Physica Sinica,
1991, 40(8): 1329-1338.
doi: 10.7498/aps.40.1329
|
| [14] |
WANG REN-ZHI, HUANG MEI-CHUN. ON THE CORRESPONDENCE OF BAND EIGENSTATES OF (GaAs)1(AlAs)1(001) SUPERLATTICE AND Ga0.5Al0.5As ALLOY. Acta Physica Sinica,
1991, 40(6): 949-956.
doi: 10.7498/aps.40.949
|
| [15] |
WANG REN-ZHI, HUANG MEI-CHUN. FIRST PRINCIPLE STUDY OF OPTICAL-PHONON DEFORMA-TION POTENTIALS ON Λ-AXIS FOR GaAs AND AlAs. Acta Physica Sinica,
1990, 39(2): 282-288.
doi: 10.7498/aps.39.282
|
| [16] |
WU CHUN-WU, YIN SHI-DUAN, ZHANG JING-PING, XIAO GUANG-MING, LIU JIA-RUI, ZHU PEI-RAN. ANOMALOUS ION CHANNELING EFFECTS IN InGaAs/GaAs STRAINED HETEROJUNCTIONS. Acta Physica Sinica,
1989, 38(1): 83-90.
doi: 10.7498/aps.38.83
|
| [17] |
GU YI-MING, HUANG MING-ZHU, WANG KE-LING. INVESTIGATION OF THE Cr2+(3d4) IN GaAs UNDER HYDROSTATIC PRESSURE AND AlAs ALLOYING. Acta Physica Sinica,
1988, 37(2): 206-213.
doi: 10.7498/aps.37.206
|
| [18] |
SHI CHANG-XIN, XIN SHANG-HENS, WU DING-FEN. THE EFFECT OF PARALLEL CONDUCTANCE IN AlGaAs/GaAs HETEROJUNCTION. Acta Physica Sinica,
1987, 36(3): 363-367.
doi: 10.7498/aps.36.363
|
| [19] |
Xue Fang-shi. ENERGY BAND CALCULATION FOR GaAs, GaP AND GaAsxP1-x. Acta Physica Sinica,
1986, 35(10): 1315-1321.
doi: 10.7498/aps.35.1315
|
| [20] |
CHANG YU-WON, YU QI-HUA. THE CALCULATION OF THE ENERGY-BAND STRUCTURE OF SOME SEMICONDUCTORS WITH THE PSEUDOPOTENTIAL PERTURBATION METHOD (APPLICATION TO GaAs, GaP AND Ga[As1-xPx]ALLOY). Acta Physica Sinica,
1965, 21(6): 1162-1169.
doi: 10.7498/aps.21.1162
|
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