| [1] |
Wang Ning, Wang Bao-Chuan, Guo Guo-Ping. New progress of silicon-based semiconductor quantum computation. Acta Physica Sinica,
2022, 71(23): 230301.
doi: 10.7498/aps.71.20221900
|
| [2] |
Cheng Zhe. Thermal science and engineering in third-generation semiconductor materials and devices. Acta Physica Sinica,
2021, 70(23): 236502.
doi: 10.7498/aps.70.20211662
|
| [3] |
Zhang Ning, Xu Kai-Kai, Chen Yan-Xu, Zhu Kun-Feng, Zhao Jian-Ming, Yu Qi. Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits. Acta Physica Sinica,
2019, 68(16): 167803.
doi: 10.7498/aps.68.20191004
|
| [4] |
Luo Jun-Wei, Li Shu-Shen. Semiconductor Materials Genome Initiative: silicon-based light emission material. Acta Physica Sinica,
2015, 64(20): 207803.
doi: 10.7498/aps.64.207803
|
| [5] |
Hong Xia, Guo Xiong-Bin, Fang Xu, Li Kan, Ye Hui. Design of silicon based germanium metal-semiconductor-metal photodetector enhanced by surface plasmon resonance. Acta Physica Sinica,
2013, 62(17): 178502.
doi: 10.7498/aps.62.178502
|
| [6] |
Cao Lei, Liu Hong-Xia, Wang Guan-Yu. Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica,
2012, 61(1): 017105.
doi: 10.7498/aps.61.017105
|
| [7] |
Peng Xian-De, Zhu Tao, Wang Fang-Wei. High temperature annealing treatment on Co doped ZnO bulks. Acta Physica Sinica,
2009, 58(5): 3274-3279.
doi: 10.7498/aps.58.3274
|
| [8] |
Zhao Wen-Bin, Zhang Guan-Jun, Yan Zhang. Investigation on surface damage phenomena induced by flashover across semiconductor. Acta Physica Sinica,
2008, 57(8): 5130-5137.
doi: 10.7498/aps.57.5130
|
| [9] |
Zhang Wen, Liu Cai-Chi, Wang Hai-Yun, Xu Yue-Sheng, Shi Yi-Qing. The effective viscosity of silicon melt in magnetic field. Acta Physica Sinica,
2008, 57(6): 3875-3879.
doi: 10.7498/aps.57.3875
|
| [10] |
REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI. Acta Physica Sinica,
1986, 35(11): 1457-1464.
doi: 10.7498/aps.35.1457
|
| [11] |
YE HONG-JUAN. THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE. Acta Physica Sinica,
1986, 35(7): 939-943.
doi: 10.7498/aps.35.939
|
| [12] |
ZHANG KAI-MING, YE LING, XU YONG-NIAN. ALUMINIUM CHEMISORPTION ON THE SEMICONDUCTOR SURFACES. Acta Physica Sinica,
1982, 31(2): 220-225.
doi: 10.7498/aps.31.220
|
| [13] |
GAN ZI-ZHAO, YANG GUO-ZHEN. ON THE THIRD ORDER OPTICAL NONLINEARITY OF SEMICONDUCTORS NEAR ITS ABSORPTION EDGE. Acta Physica Sinica,
1982, 31(2): 237-242.
doi: 10.7498/aps.31.237
|
| [14] |
ZHU RU-ZENG. ON THE QUANTUM MECHANICAL TREATMENT OF A DAMPED HARMONIC OSILLATOR. Acta Physica Sinica,
1981, 30(10): 1410-1414.
doi: 10.7498/aps.30.1410
|
| [15] |
LIU LIAO, YANG YI-HONG, CHEN FANG-PEI, SHAO JI-QUN. 关于“典型时空”的问题讨论. Acta Physica Sinica,
1976, 25(4): 362-366.
doi: 10.7498/aps.25.362
|
| [16] |
ZHANG EN-QIU. THEORY OF THERMIONIC EMISSION (I)——A CRITICISM OF THE SEMI-CONDUCTOR MODEL OF THE OXIDE-COATED CATHODE. Acta Physica Sinica,
1974, 23(5): 43-52.
doi: 10.7498/aps.23.43
|
| [17] |
CHANG PEI-KUNG, SHIUH GEN-TWEN. AN ANALYSIS FOR THE OPERATION CURRENT RANGE OF INJECTION LASER. Acta Physica Sinica,
1966, 22(8): 930-944.
doi: 10.7498/aps.22.930
|
| [18] |
CHANG YU-WON, YU QI-HUA. THE CALCULATION OF THE ENERGY-BAND STRUCTURE OF SOME SEMICONDUCTORS WITH THE PSEUDOPOTENTIAL PERTURBATION METHOD (APPLICATION TO GaAs, GaP AND Ga[As1-xPx]ALLOY). Acta Physica Sinica,
1965, 21(6): 1162-1169.
doi: 10.7498/aps.21.1162
|
| [19] |
PU FU-CHO, CHENG CHIN-CHI. SPIN CONFIGURATION OF MAGNETIC SUBSTANCES. Acta Physica Sinica,
1962, 18(3): 135-142.
doi: 10.7498/aps.18.135
|
| [20] |
CHEN SHIN-BI. ON THE PROBLEMS OF STORAGE TIME OF DRIFT TRANSISTOR OPERATING IN SATURATION REGION. Acta Physica Sinica,
1959, 15(7): 353-367.
doi: 10.7498/aps.15.353
|
下载: