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在半导体表面的亚微米通道中,实验上发现电导率随门电压的变化呈现出振荡结构,本文利用格林函数方法计算了狭通道的定域态密度,并看到它具有一系列尖峰,因而定性地解释了电导率振荡的来源。In the sub-micron channels of semiconductor surface, it has been found that the conductivity has oscillation structure with gate voltage. We calculate the local density of states for the narrow channel by using Green function method and see that the density of states shows a series of sharp peaks, which can be used to explain qualitatively the conductivity oscillation.
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