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The Wely semimetal WTe2 exhibits significant spin-orbit coupling characteristics and can generate unconventional spin current with out-of-plane polarization, which has become a hotspot in recent years. Meanwhile, WTe2 also has high charge-spin conversion efficiency, allowing perpendicular magnetization to be switched deterministically without the assistance of an external magnetic field, which is critical for the high-density integration of low-power magnetic random-access memories. The purpose of this paper is to review the recent advances in the research on spin orbit torque in heterostructures composed of WTe2 and ferromagnetic layers, focusing on progress of research on the detection and magnetization switching in the spin orbit torque of heterojunctions composed of WTe2 prepared by different methods (e.g. mechanical exfoliation and chemical vapor deposition) and ferromagnetic layers such as conventional magnets (e.g, FeNi and CoFeB, etc.) and two-dimensional magnets (e.g. Fe3GeTe2, etc.). Finally, the prospect of related research is discussed.
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Keywords:
- WTe2 /
- spin-orbit torque /
- current-driven magnetization switching
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图 2 (a) τS/τB和τT/τB分别与WTe2厚度的关系; (b)单层和双层的WTe2/Py器件的二次谐波霍尔电压与外加磁场角度关系, τB的符号反转反映在发现峰值信号的不同角度上[32]
Fig. 2. (a) Ratios of the τS/τB and τT/τB as a function of WTe2 thickness; (b) second-harmonic Hall data for a WTe2/Py device with a monolayer bilayer WTe2, as a function of the angle of the applied magnetic field. The sign reversal of τB is reflected in the different angles at which the peak signals are found[32].
表 1 实验研究工作中WTe2晶体的制备方法、铁磁层材料和WTe2/FM异质结的SOT的表征方法、测试温度和自旋霍尔电导率
Table 1. Preparation method of WTe2 crystal, FM material, measurement method, experimental temperature and spin Hall conductivity for SOT in WTe2/FM heterostructures.
制备方法 铁磁层材料 表征方法 测试温度/K 自旋霍尔电导率
$ / {10^3}~({\hbar /{2{{e}}}}) {(\Omega {\cdot} {\text{m}})^{ - 1}} $文献 Exfoliation Py ST-FMR 300 σS = 8 ± 2
σA = 9 ± 3
σB = 3.6 ± 0.8[38] Py SHH/ST-FMR 300 σS, σT, σA, σB observed [32] Py ST-FMR/SHH 300 σS, σA, σB observed [45] Fe2.78GeTe2 AHE loop shift 150—190 σB observed [39] Fe3GeTe2 Current-driven MS 110—135 σB observed [40] Fe3GeTe2 AHE loop shift 120 σB observed [41] SrRuO3 AHE loop shift 40 σB observed [43] CoTb SHH 300 σS, σT observed [46] CVD FeNi ST-FMR 300 σOP = 1.76
σIP = 7.36[47] CoFeB AHE loop shift/SHH 300 σOP = 2.05 ± 0.39
σIP = 3.58 ± 0.12[42] 注: σS, σT, σB和σA分别表示面内类阻尼SOT、面内类场SOT、面外类阻尼SOT和面外类场SOT相关的自旋霍尔电导率; σOP和σIP分别表示面外和面内自旋霍尔电导率; ST-FMR, SHH, AHE loop shift和Current-driven MS分别表示自旋力矩-铁磁共振、二次谐波测量技术、反常霍尔效应回线偏移和电流驱动的磁化开关测试测试方法; CVD表示化学气相沉积. -
[1] Baibich M N, Broto J M, Fert A, Nguyen V D F, Petroff F, Etienne P, Creuzet G, Friederich A, Chazelas J 1988 Phys. Rev. Lett. 61 2472Google Scholar
[2] Binasch G, Grünberg P, Saurenbach F, Zinn W 1989 Phys. Rev. B 39 4828Google Scholar
[3] Moodera J S, Kinder L R, Wong T M, Meservey R 1995 Phys. Rev. Lett. 74 3273Google Scholar
[4] Parkin S S, Hayashi M, Thomas L 2008 Science 320 190Google Scholar
[5] Claude C, Albert F, Frédéric N V D 2007 Nature 6 813Google Scholar
[6] Albert F J, Katine J A, Buhrman R A, Ralph D C 2000 Appl. Phys. Lett. 77 3809Google Scholar
[7] Katine J A, Albert F J A, Buhrman R A 2000 Phys. Rev. Lett. 84 3149Google Scholar
[8] Brataas A, Kent A D, Ohno H 2012 Nat. Mater. 11 372Google Scholar
[9] Liu L, Lee O J, Gudmundsen T J, Ralph D C, Buhrman R A 2012 Phys. Rev. Lett. 109 096602Google Scholar
[10] Liu L, Pai C F, Li Y, Tseng H W, Ralph D C, Buhrman R A 2012 Science 336 555Google Scholar
[11] Slonczewski J C 1996 J. Magn. Magn. Mater. 159 L1Google Scholar
[12] 何聪丽, 许洪军, 汤建, 王潇, 魏晋武, 申世鹏, 陈庆强, 邵启明, 于国强, 张广宇, 王守国 2021 70 127501Google Scholar
He C L, Xu H J, Tang J, Wang X, Wei J W, Shen S P, Chen Q Q, Shao Q M, Yu G Q, Zhang G Y, Wang S G 2021 Acta. Phys. Sin. 70 127501Google Scholar
[13] Tang W, Liu H L, Li Z, Pan A L, Zeng Y J 2021 Adv. Sci. 8 2100847Google Scholar
[14] Miron I M, Garello K, Gaudin G, Zermatten P J, Costache M V, Auffret S, Bandiera S, Rodmacq B, Schuhl A, Gambardella P 2011 Nature 476 189Google Scholar
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[17] Yang S H, Ryu K S, Parkin S 2015 Nat. Nanotechnol. 10 221Google Scholar
[18] Tang W, Zhou Z W, Nie Y Z, Xia Q L, Zeng Z M, Guo G H 2017 Appl. Phys. Lett. 111 172402Google Scholar
[19] Avci C O, Quindeau A, Pai C F, Mann M, Caretta L, Tang A S, Onbasli M C, Ross C A, Beach G S D 2016 Nat. Mater. 16 309Google Scholar
[20] Ryu J, Lee S, Lee K J, Park B G 2020 Adv. Mater. 32 1907148Google Scholar
[21] Liu L, Moriyama T, Ralph D C, Buhrman R A 2011 Phys. Rev. Lett. 106 036601Google Scholar
[22] Fukami S, Zhang C, DuttaGupta S, Kurenkov A, Ohno H 2016 Nat. Mater. 15 535Google Scholar
[23] Cai K M, Yang M Y, Ju H L, Wang S M, Ji Y, Li B H, Edmonds K W, Sheng Y, Zhang B, Zhang N, Liu S, Zheng H Z, Wang K Y 2017 Nat. Mater. 16 712Google Scholar
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[25] Ma Q, Li Y, Gopman D B, Kabanov Y P, Shull R D, Chien C L 2018 Phys. Rev. Lett. 120 117703Google Scholar
[26] Sheng Y, Edmonds K W, Ma X, Zheng H, Wang K Y 2018 Adv. Electron. Mater. 4 1800224Google Scholar
[27] Bekele Z A, Liu X H, Cao Y, Wang K Y 2020 Adv. Electron. Mater. 7 2000793Google Scholar
[28] Cao Y, Sheng Y, Edmonds K W, Ji Y, Zheng H, Wang K Y 2020 Adv. Mater. 32 e1907929Google Scholar
[29] Yuan H, Bahramy M S, Morimoto K, Wu S, Nomura K, Yang B J, Shimotani H, Suzuki R, Toh M, Kloc C, Xu X, Arita R, Nagaosa N, Iwasa Y 2013 Nat. Phys. 9 563Google Scholar
[30] Jungfleisch M B, Zhang W, Sklenar J, Ding J, Jiang W, Chang H, Fradin F Y, Pearson J E, Ketterson J B, Novosad V, Wu M, Hoffmann A 2016 Phys. Rev. Lett. 116 057601Google Scholar
[31] Deng K, Wan G L, Deng P, Zhang K N, Ding S J, Wang E Y, Yan M Z, Huang H Q, Zhang H Y, Xu Z L, Denlinger J, Fedorov A, Yang H T, Duan W H, Yao H, Wu Y, Fan S S, Zhang H J, Chen X, Zhou S Y 2016 Nat. Phys. 12 1105Google Scholar
[32] MacNeill D, Stiehl G M, Guimarães M H D, Reynolds N D, Buhrman R A, Ralph D C 2017 Phys. Rev. B 96 054450Google Scholar
[33] Lü W M, Jia Z Y, Wang B C, Lu Y, Luo X, Zhang B S, Zeng Z M, Liu Z Y 2018 ACS Appl. Mater. Interfaces 10 2843Google Scholar
[34] Li Q, Yan J Q, Yang B, Zang Y Y, Zhang J J, He K, Wu M H, Zhao Y F, Mandrus D, Wang J, Xue Q K, Chi L F, Singh D J, Pan M 2016 Phys. Rev. B 94 115419Google Scholar
[35] Johansson A, Henk J, Mertig I 2018 Phys. Rev. B 97 085417Google Scholar
[36] Sun Y, Zhang Y, Felser C, Yan B H 2016 Phys. Rev. Lett. 117 146403Google Scholar
[37] Jiang J, Tang F, Pan X C, Liu H M, Niu X H, Wang Y X, Xu D F, Yang H F, Xie B P, Song F Q, Dudin P, Kim T K, Hoesch M, Das P K, Vobornik I, Wan X G, Feng D L 2015 Phys. Rev. Lett. 115 166601Google Scholar
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[49] Zhao B, Khokhriakov D, Zhang Y, Fu H, Karpiak B, Hoque A M, Xu X, Jiang Y, Yan B, Dash S P 2020 Phys. Rev. Res. 2 013286Google Scholar
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[53] Peng C W, Liao W B, Chen T Y, Pai C F 2021 ACS Appl. Mater. Interfaces 13 15950Google Scholar
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