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基于外尔半金属WTe2的自旋-轨道矩驱动磁矩翻转

魏陆军 李阳辉 普勇

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基于外尔半金属WTe2的自旋-轨道矩驱动磁矩翻转

魏陆军, 李阳辉, 普勇

Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe2

Wei Lu-Jun, Li Yang-Hui, Pu Yong
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  • 外尔半金属WTe2有强自旋轨道耦合且能产生新奇非常规面外极化的自旋流, 是近几年的新兴热点. 同时WTe2还具有高的电荷-自旋转换效率, 能在无外磁场辅助的情况下实现垂直磁矩确定性的翻转, 这对于高密度集成低功耗磁随机存取存储器至关重要. 本文回顾了近几年WTe2与铁磁层组成异质结构中自旋轨道矩研究的最新进展, 包括用不同方法制备的WTe2 (例如机械剥离和化学气相沉积)与铁磁层(例如FeNi和CoFeB等)、二维磁体(例如Fe3GeTe2等)组成异质结的自旋轨道矩探测和磁矩翻转的电调控研究进展. 最后, 对相关研究的发展提出展望.
    The Wely semimetal WTe2 exhibits significant spin-orbit coupling characteristics and can generate unconventional spin current with out-of-plane polarization, which has become a hotspot in recent years. Meanwhile, WTe2 also has high charge-spin conversion efficiency, allowing perpendicular magnetization to be switched deterministically without the assistance of an external magnetic field, which is critical for the high-density integration of low-power magnetic random-access memories. The purpose of this paper is to review the recent advances in the research on spin orbit torque in heterostructures composed of WTe2 and ferromagnetic layers, focusing on progress of research on the detection and magnetization switching in the spin orbit torque of heterojunctions composed of WTe2 prepared by different methods (e.g. mechanical exfoliation and chemical vapor deposition) and ferromagnetic layers such as conventional magnets (e.g, FeNi and CoFeB, etc.) and two-dimensional magnets (e.g. Fe3GeTe2, etc.). Finally, the prospect of related research is discussed.
      通信作者: 普勇, yongpu@njupt.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 52001169, 61874060, U1932159, 61911530220)和南京邮电大学引进人才科研启动基金(批准号: NY219164, NY217118)资助的课题.
      Corresponding author: Pu Yong, yongpu@njupt.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52001169, 61874060, U1932159, 61911530220) and the Introduction Talent Research Launch Fund of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY219164, NY217118).
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  • 图 1  WTe2晶体结构

    Fig. 1.  Crystal structure of WTe2.

    图 2  (a) τS/τBτT/τB分别与WTe2厚度的关系; (b)单层和双层的WTe2/Py器件的二次谐波霍尔电压与外加磁场角度关系, τB的符号反转反映在发现峰值信号的不同角度上[32]

    Fig. 2.  (a) Ratios of the τS/τB and τTB as a function of WTe2 thickness; (b) second-harmonic Hall data for a WTe2/Py device with a monolayer bilayer WTe2, as a function of the angle of the applied magnetic field. The sign reversal of τB is reflected in the different angles at which the peak signals are found[32].

    图 3  (a)电流沿WTe2 a轴诱导磁化翻转特性[42]; (b)在WTe2/Fe3GeTe2异质结中SOT诱导的无场磁化翻转[40]

    Fig. 3.  (a) The current-induced magnetization switching behavior along the a axis of WTe2[42]; (b) SOT-induced field-free switching in WTe2/Fe3GeTe2 bilayers[40].

    表 1  实验研究工作中WTe2晶体的制备方法、铁磁层材料和WTe2/FM异质结的SOT的表征方法、测试温度和自旋霍尔电导率

    Table 1.  Preparation method of WTe2 crystal, FM material, measurement method, experimental temperature and spin Hall conductivity for SOT in WTe2/FM heterostructures.

    制备方法 铁磁层材料 表征方法 测试温度/K 自旋霍尔电导率
    $ / {10^3}~({\hbar /{2{{e}}}}) {(\Omega {\cdot} {\text{m}})^{ - 1}} $
    文献
    Exfoliation Py ST-FMR 300 σS = 8 ± 2
    σA = 9 ± 3
    σB = 3.6 ± 0.8
    [38]
    Py SHH/ST-FMR 300 σS, σT, σA, σB observed [32]
    Py ST-FMR/SHH 300 σS, σA, σB observed [45]
    Fe2.78GeTe2 AHE loop shift 150—190 σB observed [39]
    Fe3GeTe2 Current-driven MS 110—135 σB observed [40]
    Fe3GeTe2 AHE loop shift 120 σB observed [41]
    SrRuO3 AHE loop shift 40 σB observed [43]
    CoTb SHH 300 σS, σT observed [46]
    CVD FeNi ST-FMR 300 σOP = 1.76
    σIP = 7.36
    [47]
    CoFeB AHE loop shift/SHH 300 σOP = 2.05 ± 0.39
    σIP = 3.58 ± 0.12
    [42]
    注: σS, σT, σBσA分别表示面内类阻尼SOT、面内类场SOT、面外类阻尼SOT和面外类场SOT相关的自旋霍尔电导率; σOPσIP分别表示面外和面内自旋霍尔电导率; ST-FMR, SHH, AHE loop shift和Current-driven MS分别表示自旋力矩-铁磁共振、二次谐波测量技术、反常霍尔效应回线偏移和电流驱动的磁化开关测试测试方法; CVD表示化学气相沉积.
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出版历程
  • 收稿日期:  2023-11-21
  • 修回日期:  2024-01-03
  • 上网日期:  2024-01-06
  • 刊出日期:  2024-01-05

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