基于层状多元金属氧化物的人造突触

刘强; 倪尧; 刘璐; 孙林; 刘甲奇; 徐文涛

doi:10.7498/aps.71.20220303

摘要

神经形态电子学的迅速发展为生物神经系统仿生与模拟提供了有力支持. 具有三明治结构的两端人造突触电子器件不仅在结构上模拟了生物突触, 同时在类神经电脉冲信号的作用下可以完成对生物突触塑性的模拟与调控. 本文利用溶胶-凝胶法合成了具有层状结构的P3相Na_2/3Ni_1/3Mn_2/3O₂多元金属氧化物. 借助其晶体结构中Na⁺易于嵌入/脱出的特性, 设计并制备了基于Na_2/3Ni_1/3Mn_2/3O₂的离子迁移型人造突触, 器件在电脉冲信号的刺激下实现了对生物突触塑性的模拟, 并通过调校类神经尖峰脉冲信号, 成功对塑性行为进行了调控. 成功模拟了兴奋性突触后电流、双脉冲易化、脉冲数量依赖可塑性、脉冲频率依赖可塑性、脉冲电压幅值依赖可塑性和脉冲持续时间依赖可塑性. 同时, 器件实现了对摩斯电码指令的准确识别与响应.

关键词:

Abstract

Neuromorphic electronics has received considerable attention recent years, and its basic functional units are synaptic electronic devices. A two-terminal artificial synapse with sandwiched structure emulates plasticity of the biological synapses under the action of nerve-like electrical impulse signals. In this paper, P3 phase Na_2/3Ni_1/3Mn_2/3O₂ multi-element metal oxides with layered structure are synthesized by sol-gel process. Owing to the fact that Na⁺ is easy to embed/eject into its crystal structure, an ion-migrating artificial synapse based on Na_2/3Ni_1/3Mn_2/3O₂ is designed and fabricated. The device emulates important synaptic plasticity, such as excitatory postsynaptic current, paired-pulse facilitation, spike-number dependent plasticity, spike-frequency dependent plasticity, spike-voltage amplitude dependent plasticity and spike-duration dependent plasticity. The device realizes the identification and response to Morse code commands.

Keywords:

作者及机构信息

南开大学光电子薄膜器件与技术研究所, 天津市光电子薄膜器件与技术重点实验室, 天津　300350

通信作者: 徐文涛, wentao@nankai.edu.cn

基金项目: 国家杰出青年科学基金(批准号: T2125005)、天津市杰出青年科学基金(批准号: 19JCJQJC61000)和深圳市科技计划 (批准号: JCYJ20210324121002008)资助的课题.

Authors and contacts

Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, China

Corresponding author: Xu Wen-Tao, wentao@nankai.edu.cn

Funds: Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No. T2125005), the Tianjin Science Foundation for Distinguished Young Scholars, China (Grant No. 19JCJQJC61000), and the Shenzhen Science and Technology Project, China (Grant No. JCYJ20210324121002008).

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 (a) 生物神经元及突触结构示意图; (b) 人工突触电子器件结构示意图; (c) P3相Na_2/3Ni_1/3Mn_2/3O₂结构示意图

Fig. 1. (a) Schematic diagram of biological neuron and synapse structure; (b) schematic diagram of artificial synaptic electronic device structure; (c) schematic diagram of the structure of P3 phase Na_2/3Ni_1/3Mn_2/3O₂.

下载: 全尺寸图片幻灯片

图 2 (a) Na_2/3Ni_1/3Mn_2/3O₂粉末X射线衍射测试图; (b) Na_2/3Ni_1/3Mn_2/3O₂粉末扫描电子显微镜测试图; (c) Na_2/3Ni_1/3Mn_2/3O₂粉末X射线能谱分析图; (d) Na_2/3Ni_1/3Mn_2/3O₂活性层扫描电子显微镜表面形貌测试图; (e) 底电极铝箔、Na_2/3Ni_1/3Mn_2/3O₂活性层与PEO-Na电解质薄层扫描电子显微镜断面形貌测试图; (f) Na_2/3Ni_1/3Mn_2/3O₂活性层原子力显微镜测试图

Fig. 2. (a) X-ray diffraction test diagram of Na_2/3Ni_1/3Mn_2/3O₂ powder; (b) scanning electron microscope test diagram of Na_2/3Ni_1/3Mn_2/3O₂ powder; (c) EDS test diagram of Na_2/3Ni_1/3Mn_2/3O₂ powder; (d) surface topography test diagram of Na_2/3Ni_1/3Mn_2/3O₂ active layer scanning electron microscope ; (e) bottom electrode Al foil, Na_2/3Ni_1/3Mn_2/3O₂ active layer and PEO-Na electrolyte thin layer scanning electron microscope cross-sectional morphology test diagram; (f) atom force microscope test diagram of Na_2/3Ni_1/3Mn_2/3O₂ active layer.

下载: 全尺寸图片幻灯片

图 3 (a) 单次阻变特性测试; (b) 连续50次阻变特性稳定能力测试; (c) 对器件施加单个幅值为0.2 V的电脉冲信号所产生的EPSC; (d) 对器件连续施加两个幅值为0.2 V的电脉冲信号所产生的PPF; 对器件施加多对时间间隔不同幅值为0.2 V的电脉冲信号所产生的(e) PPF以及(f) PPF指数

Fig. 3. (a) Single resistance characteristic test; (b) 50 consecutive tests of resistance characteristic stability; (c) EPSC generated by applying a single electrical pulse signal with an amplitude of 0.2 V to the device; (d) PPF generated by continuously applying two electrical pulse signals with an amplitude of 0.2 V to the device; (e) PPF and (f) PPF index generated by applying multiple pairs of electrical pulse signals with different amplitudes of 0.2 V to the device.

下载: 全尺寸图片幻灯片

图 4 对器件连续施加10个幅值为0.2 V的电脉冲信号所产生的 (a) SNDP以及(b) SNDP 指数; (c) 对器件施加幅值从0 V—4 V—0 V变化的10组电脉冲信号循环所产生的SVDP; 对器件施加多个脉冲宽度不同幅值为0.2 V的电脉冲信号所产生的(d) SDDP以及(e) SDDP 指数; (f) 对器件连续施加多组频率不同幅值为0.2 V的电脉冲信号所产生的SFDP

Fig. 4. (a) SNDP and (b) SNDP index generated by continuously applying 10 electrical pulse signals with an amplitude of 0.2 V to the device; (c) 10 groups of amplitudes varying from 0 V to 4 V to 0 V are applied to the device SVDP generated by electrical pulse signal cycle; (d) SDDP and (e) SDDP index generated by applying multiple electrical pulse signals with different pulse widths and amplitudes of 0.2 V to the device; (f) SFDP generated by continuously applying multiple groups of electrical pulse signals with the different frequencies and amplitudes of 0.2 V to the device.

下载: 全尺寸图片幻灯片

图 5 对器件施加内容为Na_2/3 (a), Ni_1/3 (b), Mn_2/3 (c), O₂ (d)的摩斯电码制式的电脉冲信号所产生的突触后电流响应

Fig. 5. Post-synaptic current response generated by applying Morse code electrical pulse signals with content of (a) Na_2/3, (b) Ni_1/3, (c) Mn_2/3, (d) O₂ to the device.

下载: 全尺寸图片幻灯片

map

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[2]	Ling H, Koutsouras D A, Kazemzadeh S, Van De Burgt Y, Yan F, Gkoupidenis P 2020 Appl. Phys. Rev. 7 011307 Google Scholar
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[5]	Choi D, Song M K, Sung T, Jang S, Kwon J Y 2020 Nano Energy 74 104912 Google Scholar
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[7]	Lu K, Li X, Sun Q, Pang X, Chen J, Minari T, Liu X, Song Y 2021 Mater. Horiz. 8 447 Google Scholar
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基于层状多元金属氧化物的人造突触