高速太赫兹探测器

张真真; 黎华; 曹俊诚

doi:10.7498/aps.67.20180226

摘要

太赫兹（terahertz，THz）技术在高速空间通信、外差探测、生物医学、无损检测和国家安全等领域具有广阔的应用前景.能响应1 GHz调制速率以上THz光的高速THz探测器是快速成像、THz高速空间通信、超快光谱学应用技术和THz外差探测等领域的核心器件.传统的THz热探测器难以实现高速工作，而基于半导体的THz探测器在理论上可实现高速工作.光导天线具有超快的响应速度，可实现常温和宽谱探测；肖特基势垒二极管混频器、超导-绝缘体-超导混频器和超导热电子混频器具有转换效率高、噪声低等优点，可用于高速THz空间外差和直接探测；基于高迁移率二维电子气的天线耦合场效应晶体管灵敏度高、阻抗低，可实现常温高速THz探测；THz量子阱探测器是一种基于子带间跃迁原理的单极器件，非常适合高频和高速探测应用，亚波长金属微腔耦合机理可显著提高器件的工作温度及光子吸收效率.本文对上述几种高速THz探测器进行了综述并分析了各种探测器的优缺点.

关键词:

Abstract

Terahertz (THz) technologies have broad application prospects in ultrafast space communication, heterodyne detection, biological detection, non-destructive testing and national security. Ultrafast THz detectors, which can respond to the THz light with modulation rate larger than 1 GHz, are the key component of fast imaging, space communication, ultrafast spectroscopy and THz heterodyne applications. Theoretically, the traditional THz detectors based on heat effects are difficult to meet the requirements for fast detections, while the semiconductor based THz detectors can work under the condition of ultrafast detection. Photoconductive antennas with ultrafast response time are suitable for room-temperature broad-spectrum THz detections. Schottky barrier diodes, superconductor-insulator-superconductor mixers and hot electron bolometers are promising candidates for high-speed THz spatial heterodyne and direct detections attributable to their high conversion efficiency and low noise. High-mobility field effect transistors based on two-dimensional graphene material have the advantages of high sensitivity and low impedance, which make this kind of device have great potential applications in room-temperature high-speed detections. THz quantum well detectors (THz QWPs) based on inter-subband transitions are very suitable for the applications in high-frequency and high-speed detections because of the advantages of high responsivity, small value and integrated packaging. Recently, we have demonstrated 6.2 GHz bandwidth modulation by using THz QWPs, the fast THz receiving device. On the other hand, low working temperature and low coupling efficiency are the main factors that restrict the applications of THz QWPs. From the Brewster angle, 45 polished facet coupling structure, to one-or two-dimensional metal grating and surface Plasmon polariton coupling configuration, researchers often explore the appropriate coupling mechanism which can not only couple the normal incidence THz light, but also improve the coupling efficiency substantially. The sub-wavelength double-metal micro-cavity array coupling structure has two advantages which make THz QWPs a key candidate for fast imaging and detection in THz band:firstly, the patch antennas on the device surface can effectively increase the light absorption region, and the periodic structure can make the normal incidence THz light fulfill the rule of intersubband transition. Secondly, the sub-wavelength size double metal structure can restrict the light within a very small volume, and the electric current will be enhanced by the resonance effect when the cavity mode is equal to the peak response frequency, which can suppress the dark current and improve the optical coupling efficiency of the device. In this paper, several ultrafast THz detectors are reviewed and the advantages and disadvantages of various detectors are also analyzed.

Keywords:

作者及机构信息

1.
中国科学院上海微系统与信息技术研究所, 中国科学院太赫兹固态技术重点实验室, 上海 200050;

2.
中国科学院大学, 北京 100049

通信作者: 黎华, hua.li@mail.sim.ac.cn;jccao@mail.sim.ac.cn ; 曹俊诚, hua.li@mail.sim.ac.cn;jccao@mail.sim.ac.cn

基金项目: 国家重点基础研究发展计划（批准号：2014CB339803）、国家重点研发计划（2017YFF0106302）、国家自然科学基金（批准号：61575214，61405233，61404150）和中国科学院百人计划资助的课题.

Authors and contacts

1.
Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

2.
University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Li Hua, hua.li@mail.sim.ac.cn;jccao@mail.sim.ac.cn ; Cao Jun-Cheng, hua.li@mail.sim.ac.cn;jccao@mail.sim.ac.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2014CB339803), the National Key RD Program of China (Grant No. 2017YFF0106302), the National Natural Science Foundation of China (Grant Nos. 61575214, 61405233, 61404150), and the Hundred Talents Program of Chinese Academy of Sciences.

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施引文献

[1]	Ferguson B, Zhang X C 2002 Nat. Mater. 1 26
[2]	Cao J C 2012 Semiconductor Terahertz Sources, Detectors and Applications (Beijing: Science Press) pp1-7 (in Chinese) [曹俊诚 2012 半导体太赫兹源、探测器与应用(北京: 科学出版社)第17页]
[3]	Federici J F, Schulkin B, Huang F, Gary D, Barat R, Oliveira F, Zimdars D 2005 Semicond. Sci. Technol. 20 S266
[4]	Zheng X, Wu Z M, Gou J, Liu Z J, Wang J, Zheng J, Luo Z F, Chen W Q, Que L C, Jiang Y D 2016 J. Infrared Millim. Terahertz Waves 37 965
[5]	Yen T J, Padilla W J, Fang N, Vier D C, Smith D R, Pendry J B, Basov D N, Zhang X 2004 Science 303 1494
[6]	Padilla W J, Taylor A J, Highstrete C, Lee M, Averitt R D 2006 Phys. Rev. Lett. 96 107401
[7]	Azad A K, Dai J M, Zhang W L 2006 Opt. Lett. 31 634
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[9]	Gol'tsman G N 1999 Infrared Phys. Technol. 40 199
[10]	Qin H, Huang Y D, Sun J D, Zhang Z P, Yu Y, Li X, Sun Y F 2017 Chin. Opt. 10 51 (in Chinese) [秦华, 黄永丹, 孙建东, 张志鹏, 余耀, 李想, 孙云飞 2017 中国光学 10 51]
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[12]	Sun J D, Qin H, Lwis R A, Sun Y F, Zhang X Y, Cai Y, Wu D M, Zhang B S 2012 Appl. Phys. Lett. 100 173513
[13]	Liu H C, Song C Y, SpringThorpe A J, Cao J C 2004 Appl. Phys. Lett. 84 4068
[14]	Liu H C, Luo H, Song C Y, Wasilewski Z R, SpringThorpe A J, Cao J C 2008 IEEE J. Sel. Top. Quantum Electron. 14 374
[15]	Guo X G, Cao J C, Zhang R, Tan Z Y, Liu H C 2013 IEEE J. Sel. Top. Quantum Electron. 19 8500508
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[43]	Zmuidzinas J, Richards P L 2004 Proc. IEEE 92 1597
[44]	Bozhkov V G 2003 Radiophys. Quant. Electron. 46 631
[45]	Champlin K S, Eisenstein G 1978 IEEE Trans. Microw. Theory 26 31
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[47]	Crowe T W, Porterfield D W, Hesler J L, Bishop W L, Kurtz D S, Hui K (Hwu R J, Woolard D L Rosker M J ed.) 2005 Terahertz for Military and Security Applications Ⅲ (Vol. 5790) (Bellingham: Spie-Int Soc Optical Engineering) pp271-280
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[49]	Ishi T, Fujikata J, Makita K, Baba T, Ohashi K 2005 Jpn. J. Appl. Phys. 44 L364
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[51]	Uzawa Y, Wang Z, Kawakami A 1998 Appl. Phys. Lett. 73 680
[52]	Karpov A, Miller D, Rice F, Stern J A, Bumble B, Leduc H G, Zmuidzinas J 2007 IEEE Trans. Appl. Supercon. 17 343
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[61]	Zhang S, Wang T M, Hao M R, Yang Y, Zhang Y H, Shen W Z, Liu H C 2013 J. Appl. Phys. 114 194507
[62]	Guo X G, Tan Z Y, Cao J C, Liu H C 2009 Appl. Phys. Lett. 94 201101
[63]	Gu L L, Guo X G, Fu Z L, Wan W J, Zhang R, Tan Z Y, Cao J C 2015 Appl. Phys. Lett. 106 111107
[64]	Ferre S, Razavipour S G, Ban D Y 2013 Appl. Phys. Lett. 103 081105
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